VS-UFB250FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 250 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Very low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel • Industry standard outline SOT-227 • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS The VS-UFB250FA60 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY VR IF(AV) (1) per 600 V module at TC = 113 °C 250 A trr 166 ns Type Modules - Diode FRED Pt® Package SOT-227 These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR MAX. UNITS 600 V Continuous forward current per diode IF (1) TC = 90 °C 168 Single pulse forward current per diode IFSM TC = 25 °C 1300 PD TC = 90 °C 395 W Any terminal to case, t = 1 minute 2500 V -55 to +175 °C Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures VISOL TJ, TStg A Note (1) Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals. Revision: 31-May-16 Document Number: 93626 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB250FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. UNITS 600 - - IF = 100 A - 1.02 1.19 IF = 100 A, TJ = 175 °C - 0.87 1.02 VR = VR rated - 1.3 50 μA V TJ = 175 °C, VR = VR rated - - 4 mA VR = 600 V - 72 - pF DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS TJ = 25 °C TJ = 150 °C Peak recovery current Reverse recovery charge IRRM Qrr MIN. TYP. MAX. UNITS - 166 - ns - 291 - - 41 - - 64 - TJ = 25 °C - 3.5 - TJ = 150 °C - 10.0 - MIN. TYP. MAX. TJ = 25 °C TJ = 150 °C IF = 50 A dIF/dt = 500 A/μs VR = 200 V A μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS RthJC RthCS Flat, greased surface Weight Mounting torque Case style - - 0.43 - - 0.215 - 0.05 - - 30 - UNITS °C/W g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) SOT-227 Revision: 31-May-16 Document Number: 93626 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB250FA60 Vishay Semiconductors 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 100 TJ = 25 °C 10 TJ = 150 °C TJ = 175 °C 100 10 TJ = 150 °C 1 0.1 0.01 0.001 TJ = 25 °C 0.0001 1 0 0.5 1.0 1.5 2.0 100 0 2.5 200 300 400 500 600 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 100 10 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM 0.1 t1 DC t2 Single pulse (thermal resistance) 0.01 0.0001 0.001 0.01 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 31-May-16 Document Number: 93626 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB250FA60 Vishay Semiconductors 180 500 160 450 DC 120 350 100 80 300 250 200 60 Square wave (D = 0.5) 80 % rated VR applied 40 150 TJ = 25 °C 100 20 50 100 0 0 50 100 150 200 250 300 1000 dIF/dt (A/µs) Current Rating (A) Fig. 5 - Maximum Current Rating (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 160 14 000 140 12 000 120 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 60 40 DC 40 60 80 100 120 140 8000 6000 TJ = 25 °C 2000 0 100 0 20 TJ = 150 °C 4000 20 0 VR = 200 V IF = 50 A 10 000 RMS limit 100 Qrr (nC) Forward Power Loss (W) VR = 200 V IF = 50 A TJ = 150 °C 400 140 trr (ns) Allowable Case Temperature (°C) www.vishay.com 160 1000 dIF/dt (A/µs) Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Recovery Charge vs. dIF/dt 100 90 80 VR = 200 V IF = 50 A TJ = 150 °C Irr (A) 70 60 50 40 TJ = 25 °C 30 20 10 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Recovery Current vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 31-May-16 Document Number: 93626 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB250FA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 93626 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB250FA60 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 250 F A 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (250 = 250 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (60 = 600 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93626 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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