VS-UFB130FA60 Datasheet

VS-UFB130FA60
www.vishay.com
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 130 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
SOT-227
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
VR
600 V
IF(AV) per module at TC = 92 °C
130 A
trr
37 ns
Type
Modules - Diode FRED Pt®
Package
SOT-227
The VS-UFB130FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Cathode to anode voltage
VR
Continuous forward current per diode
IF
TC = 85 °C
82
Single pulse forward current per diode
IFSM
TC = 25 °C
750
PD
TC = 85 °C
246
W
Any terminal to case, t = 1 minute
2500
V
-55 to +175
°C
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
VISOL
TJ, TStg
A
Revision: 31-May-16
Document Number: 93657
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VS-UFB130FA60
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 μA
IF = 60 A
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
MIN.
TYP.
MAX.
600
-
-
-
1.43
1.80
UNITS
IF = 60 A, TJ = 125 °C
-
1.23
1.48
IF = 120 A
-
1.66
2.10
IF = 120 A, TJ = 125 °C
-
1.50
1.82
VR = VR rated
-
0.1
50
μA
TJ = 175 °C, VR = VR rated
-
0.20
1
mA
VR = 600 V
-
43
-
pF
UNITS
V
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
trr
IRRM
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
37
-
TJ = 25 °C
-
79
-
TJ = 125 °C
-
164
-
-
6
-
-
15
-
TJ = 25 °C
TJ = 125 °C
IF = 50 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 25 °C
-
230
-
TJ = 125 °C
-
1220
-
MIN.
TYP.
MAX.
-
-
0.73
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
-
-
0.365
Flat, greased surface
-
0.10
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf.in)
Weight
Mounting torque
Case style
UNITS
°C/W
SOT-227
Revision: 31-May-16
Document Number: 93657
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB130FA60
Vishay Semiconductors
1000
1000
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
T = 175 °C
T = 125 °C
T = 25 °C
10
1
100
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
0.5
1
1.5
2
2.5
3
3.5
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
T (pF)
CT - Junction Capacitance
1000
100
10
10
100
1000
ZthJC - Thermal Impedance (°C/W)
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
PDM
DC
0.1
t1
Single pulse
(thermal resistance)
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 31-May-16
Document Number: 93657
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB130FA60
www.vishay.com
Vishay Semiconductors
250
VR = 200 V
150
200
125
DC
75
150
50
100
IF = 50 A, 25 °C
Square wave (D = 0.5)
Rated VR applied
25
0
0
Average Power Loss (W)
IF = 50 A, 125 °C
trr (ns)
100
20
40
60
80
100
120
50
100
140
1000
IF - Continuous Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
2500
260
240
220
200
180
160
140
120
100
80
60
40
20
0
VR = 200 V
2000
IF = 50 A, TJ = 125 °C
RMS Limit
D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50
DC
0
20
40
60
Qrr (nC)
Allowable Case Temperature (°C)
175
80
100
120
1500
1000
IF = 50 A, TJ = 25 °C
500
140
0
100
160
1000
Average Forward Current - IF(AV) (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dIF/dt
35
VR = 200 V
30
25
Irr (A)
IF = 50 A, 125 °C
20
15
IF = 50 A, 25 °C
10
5
0
100
1000
dIF/dt (A/μs)
Fig. 9 - Typical Stored Current vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 31-May-16
Document Number: 93657
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB130FA60
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 31-May-16
Document Number: 93657
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB130FA60
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
B
130
F
A
60
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused
4
-
Current rating (130 = 130 A)
5
-
Circuit configuration (2 separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (60 = 600 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
2 separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 31-May-16
Document Number: 93657
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000