VS-UFB130FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel SOT-227 • Industry standard outline • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY VR 600 V IF(AV) per module at TC = 92 °C 130 A trr 37 ns Type Modules - Diode FRED Pt® Package SOT-227 The VS-UFB130FA60 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Cathode to anode voltage VR Continuous forward current per diode IF TC = 85 °C 82 Single pulse forward current per diode IFSM TC = 25 °C 750 PD TC = 85 °C 246 W Any terminal to case, t = 1 minute 2500 V -55 to +175 °C Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures VISOL TJ, TStg A Revision: 31-May-16 Document Number: 93657 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 60 A Forward voltage VFM Reverse leakage current IRM Junction capacitance CT MIN. TYP. MAX. 600 - - - 1.43 1.80 UNITS IF = 60 A, TJ = 125 °C - 1.23 1.48 IF = 120 A - 1.66 2.10 IF = 120 A, TJ = 125 °C - 1.50 1.82 VR = VR rated - 0.1 50 μA TJ = 175 °C, VR = VR rated - 0.20 1 mA VR = 600 V - 43 - pF UNITS V DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge SYMBOL trr IRRM Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 37 - TJ = 25 °C - 79 - TJ = 125 °C - 164 - - 6 - - 15 - TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 200 A/μs VR = 200 V TJ = 25 °C - 230 - TJ = 125 °C - 1220 - MIN. TYP. MAX. - - 0.73 ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS RthJC RthCS - - 0.365 Flat, greased surface - 0.10 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Weight Mounting torque Case style UNITS °C/W SOT-227 Revision: 31-May-16 Document Number: 93657 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA60 Vishay Semiconductors 1000 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 T = 175 °C T = 125 °C T = 25 °C 10 1 100 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 0 100 200 300 400 500 600 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage T (pF) CT - Junction Capacitance 1000 100 10 10 100 1000 ZthJC - Thermal Impedance (°C/W) VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM DC 0.1 t1 Single pulse (thermal resistance) t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 31-May-16 Document Number: 93657 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA60 www.vishay.com Vishay Semiconductors 250 VR = 200 V 150 200 125 DC 75 150 50 100 IF = 50 A, 25 °C Square wave (D = 0.5) Rated VR applied 25 0 0 Average Power Loss (W) IF = 50 A, 125 °C trr (ns) 100 20 40 60 80 100 120 50 100 140 1000 IF - Continuous Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 2500 260 240 220 200 180 160 140 120 100 80 60 40 20 0 VR = 200 V 2000 IF = 50 A, TJ = 125 °C RMS Limit D = 0.05 D = 0.10 D = 0.20 D = 0.33 D = 0.50 DC 0 20 40 60 Qrr (nC) Allowable Case Temperature (°C) 175 80 100 120 1500 1000 IF = 50 A, TJ = 25 °C 500 140 0 100 160 1000 Average Forward Current - IF(AV) (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Stored Charge vs. dIF/dt 35 VR = 200 V 30 25 Irr (A) IF = 50 A, 125 °C 20 15 IF = 50 A, 25 °C 10 5 0 100 1000 dIF/dt (A/μs) Fig. 9 - Typical Stored Current vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 31-May-16 Document Number: 93657 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 93657 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA60 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 130 F A 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (130 = 130 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (60 = 600 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93657 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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