VS-200CNQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 200 A FEATURES Lug terminal anode 1 • 150 °C TJ operation Lug terminal anode 2 • Center tap module • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base common cathode TO-244 • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY IF(AV) The VS-200CNQ... center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. 200 A VR 45 V Package TO-244 Circuit Two diodes common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS Rectangular waveform IF(AV) VRRM IFSM tp = 5 μs sine VF 100 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 200 A 45 V 26 000 A 0.52 V -55 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-200CNQ045PbF UNITS 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS per leg per device VALUES UNITS 100 IF(AV) 50 % duty cycle at TC = 116 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 200 A 26 000 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 17 A, L = 1 mH 135 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 20 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 1550 Revision: 26-Mar-14 Document Number: 94153 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-200CNQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 100 A Maximum forward voltage drop per leg See fig. 1 100 A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) 0.73 TJ = 25 °C 0.69 10 VR = Rated VR TJ = 125 °C V 0.52 TJ = 125 °C 200 A UNITS 0.55 TJ = 25 °C 200 A VFM (1) VALUES mA 800 TJ = TJ maximum Forward slope resistance rt Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Rated VR 0.27 V 2.0 m 5200 pF 7.0 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range per leg Thermal resistance, junction to case per module Thermal resistance, case to heatsink SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 55 - 150 °C - - 0.38 - - 0.19 - 0.10 - RthJC RthCS Weight 68 - g - 2.4 oz. Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) Vertical pull - - 80 2" lever pull - - 35 lbf in (N m) lbf in 10 000 IR - Reverse Current (mA) 1000 IF - Instantaneous Forward Current (A) °C/W TJ = 150 °C 100 TJ = 125 °C TJ = 25 °C 10 1 1000 TJ = 150 °C TJ = 125 °C 100 TJ = 100 °C 10 TJ = 75 °C TJ = 50 °C 1 TJ = 25 °C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Revision: 26-Mar-14 Document Number: 94153 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-200CNQ045PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 1 0.1 0.01 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 90 Average Power Loss (W) Allowable Case Temperature (°C) 160 150 140 DC 130 Square wave (D = 0.50) 80 % rated VR applied 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 60 RMS limit 30 DC See note (1) 0 100 0 20 40 60 80 100 120 140 160 0 30 60 90 120 150 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Revision: 26-Mar-14 Document Number: 94153 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-200CNQ045PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 100 10 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR ORDERING INFORMATION TABLE Device code VS- 20 0 C N Q 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - C = Circuit configuration 5 - N = Not isolated 6 - Q = Schottky rectifier diode 7 - Voltage rating (045 = 45 V) 8 - Lead (Pb)-free 045 PbF 7 8 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 26-Mar-14 Document Number: 94153 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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