Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm 0.20+0.05 –0.02 (0.30) 4 ■ Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half (0.20) 5 1.20±0.05 6 1.60±0.05 For switching/digital circuits 0.10±0.02 Display at No.1 lead (R1) 47 kΩ 10 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ (R2) 10 kΩ 47 kΩ 47 kΩ 5˚ 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 5 6 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V VCEO 50 V Collector current IC 100 mA Total power dissipation PT 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Publication date: December 2003 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Internal Connection ■ Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open) 0.10 max. Marking Symbol 8Z 9V 8S BR 8T 8U 0 to 0.02 • UP04210 • UP04211 • UP04213 • UP04214 • UP04215 • UP04216 0.55±0.05 ■ Resistance by Part Number SJJ00002BED R1 4 R2 Tr1 Tr2 R2 1 R1 2 3 1 UP0421x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA IEBO VEB = 6 V, IC = 0 0.01 mA UP04210/4215/4216 Emitter-base Conditions Min Typ Max V V 0.1 cutoff current UP04211 0.5 (Collector open) UP04213 0.1 UP04214 hFE VCE = 10 V, IC = 5 mA 160 460 0.25 V 35 UP04213/4214 80 Collector-emitter saturation voltage VCE(sat) Output voltage high-level VOH Output voltage low-level VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V +30% kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ UP04213 UP04210/4213 −30% R1 UP04211/4214/4215 47 10 UP04216 4.7 R1 / R 2 UP04211/4213 Resistance ratio µA 0.2 Forward current UP04210/4215/4216 transfer ratio UP04211 Input resistance Unit UP04214 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 0.8 1.0 1.2 0.17 0.21 0.25 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 150 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00002BED UP0421x Series Characteristics charts of UP04210 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 10 IC / IB = 10 1 Ta = 75°C 0.1 25°C −25˚C 0.01 0.1 Collector-emitter voltage VCE (V) 1 Output current IO (mA) Input voltage VIN (V) 0 1 Ta = 75°C 25°C 200 −25°C 100 0 0.1 100 1 10 100 1 000 Collector current IC (mA) VIN IO 100 VO = 5 V Ta = 25°C 1 0.1 10 VCE = 10 V Collector current IC (mA) IO VIN 10 hFE IC 300 Forward current transfer ratio hFE Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA IB = 1.0 mA Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 120 10 1 0.1 2 VO = 0.2 V Ta = 25°C 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UP04211 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 1 hFE IC IC / IB = 10 Ta = 75°C 0.1 25°C −25˚C 0.01 1 10 VCE = 10 V Forward current transfer ratio hFE Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA IB = 1.0 mA 120 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 100 Collector current IC (mA) SJJ00002BED 1 000 200 Ta = 75°C 25°C −25°C 100 0 1 10 100 1 000 Collector current IC (mA) 3 UP0421x Series IO VIN 0 10 20 10 1 0.1 0.01 1.0 30 10 VO = 5 V Ta = 25°C Input voltage VIN (V) 1 0.1 VIN IO 100 f = 1 MHz Ta = 25°C Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 Collector-base voltage VCB (V) 1.2 1.4 1.6 1.8 VO = 0.2 V Ta = 25°C 1 0.1 0.1 2.0 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UP04213 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 10 Ta = 75°C 0.1 −25°C 10 −25°C 80 0 0.1 100 40 Input voltage VIN (V) 4 8 Input voltage VIN (V) SJJ00002BED 100 1 000 VIN IO 1 0 10 100 10 0.1 30 1 Collector current IC (mA) VO = 5 V Ta = 25°C f = 1 MHz Ta = 25°C Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 160 IO VIN Collector-base voltage VCB (V) 4 1 100 20 25°C 25°C 0.01 0.1 Cob VCB 10 Ta = 75°C 240 Collector current IC (mA) 10 0 VCE = 10 V 1 Collector-emitter voltage VCE (V) 1 hFE IC 320 IC / IB = 10 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 120 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 12 VO = 0.2 V Ta = 25°C 10 1 0.1 0.1 1 10 Output current IO (mA) 100 UP0421x Series Characteristics charts of UP04214 VCE(sat) IC 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA Collector current IC (mA) 120 IB = 1.0 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 1 IC / IB = 10 Ta = 75°C 0.1 25°C −25˚C 0.01 1 10 25°C 200 −25°C 100 0 0.1 1 000 1 100 1 000 VIN IO 10 VO = 5 V Ta = 25°C 10 1 VO = 0.2 V Ta = 25°C 1 0.1 0.01 20 10 Collector current IC (mA) Input voltage VIN (V) f = 1 MHz Ta = 25°C 10 Ta = 75°C IO VIN 100 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 0 100 VCE = 10 V Collector current IC (mA) Collector-emitter voltage VCE (V) 1 hFE IC 300 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 0 Collector-base voltage VCB (V) 1 0.1 0.1 2 1 10 100 Input voltage VIN (V) Output current IO (mA) VCE(sat) IC hFE IC Characteristics charts of UP04215 Collector current IC (mA) 0.3 mA 80 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 1 IC / IB = 10 Ta = 75°C 0.1 25°C −25˚C 0.01 1 10 100 Collector current IC (mA) SJJ00002BED 1 000 VCE = 10 V Ta = 75°C 400 Forward current transfer ratio hFE Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA IB = 1.0 mA 120 Collector-emitter saturation voltage VCE(sat) (V) IC VCE 25°C 300 −25°C 200 100 0 1 10 100 1 000 Collector current IC (mA) 5 UP0421x Series IO VIN 100 1 0 10 20 10 1 30 VIN IO 10 VO = 5 V Ta = 25°C Input voltage VIN (V) f = 1 MHz Ta = 25°C Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 1 0.1 0 Collector-base voltage VCB (V) 1 VO = 0.2 V Ta = 25°C 2 1 10 100 Input voltage VIN (V) Output current IO (mA) VCE(sat) IC hFE IC Characteristics charts of UP04216 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 25°C −25˚C 0.01 0.1 Collector output capacitance C (pF) (Common base, input open circuited) ob Output current IO (mA) 20 30 Collector-base voltage VCB (V) 6 25°C −25°C 200 100 0 0.1 100 1 1 0.8 1.2 Input voltage VIN (V) SJJ00002BED 100 1 000 VIN IO 10 VO = 5 V Ta = 25°C 10 0.1 0.4 10 Collector current IC (mA) IO VIN 1 10 10 100 f = 1 MHz Ta = 25°C 0 1 VCE = 10 V Ta = 75°C 300 Collector current IC (mA) Cob VCB 0.1 Ta = 75°C 0.1 Collector-emitter voltage VCE (V) 10 IC / IB = 10 Input voltage VIN (V) Collector current IC (mA) 0.4 mA 80 1 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 120 Collector-emitter saturation voltage VCE(sat) (V) IC VCE VO = 0.2 V Ta = 25°C 1 0.1 0.1 1 10 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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