ETC UNR1223(UN1223)

Transistors with built-in Resistor
UNR1221/1222/1223/1224 (UN1221/1222/1223/1224)
Silicon NPN epitaxial planar transistor
●
●
●
■
UNR1221
UNR1222
UNR1223
UNR1224
(R1)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(1.0)
0.45±0.05
0.55±0.1
3
2
(2.5)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
500
mA
Total power dissipation
PT
600
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Parameter
4.5±0.1
(0.85)
Absolute Maximum Ratings (Ta=25˚C)
■ Electrical Characteristics
4.1±0.2
2.0±0.2
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
1.25±0.05
●
R 0.9
R 0.7
2.4±0.2
■ Resistance by Part Number
(1.5)
3.5±0.1
(0.4)
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(1.0)
(1.5)
1.0±0.1
●
2.5±0.1
6.9±0.1
For digital circuits
■ Features
●
Unit: mm
1
1: Base
2: Collector
3: Emitter
M-A1 Package
(2.5)
Internal Connection
C
R1
B
R2
E
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
ICBO
VCB = 50V, IE = 0
1
µA
ICEO
VCE = 50V, IB = 0
1
µA
IEBO
VEB = 6V, IC = 0
Collector to base voltage
VCBO
IC = 10µA, IE = 0
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
Collector cutoff current
Emitter
cutoff
current
UNR1221
5
UNR1222
UNR1223/1224
mA
1
Forward UNR1221
current
UNR1222
transfer
UNR1223/1224
ratio
Collector to emitter saturation voltage
50
V
50
V
40
hFE
VCE = 10V, IC = 100mA
50
60
VCE(sat)
IC = 100mA, IB = 5mA
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = 5V, VB = 3.5V, RL = 500Ω
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
Input
resistance
2
0.25
4.9
0.2
200
UNR1221/1224
V
V
V
MHz
2.2
UNR1222
R1
(–30%)
4.7
0.8
1.0
UNR1223
(+30%)
kΩ
10
Resistance ratio
UNR1224
R1/R2
1.2
0.22
Note) The part numbers in the parenthesis show conventional part number.
1
Transistors with built-in Resistor
UNR1221/1222/1223/1224
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
800
700
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UNR1221
IC — VCE
VCE(sat) — IC
IB=1.0mA
Ta=25˚C
Collector current IC (mA)
250
0.9mA
0.8mA
200
0.7mA
0.6mA
150
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
0
0
2
4
6
8
10
Collector to emitter saturation voltage VCE(sat) (V)
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
12
1
200
25˚C
100
3
10
30
100
300
1
1000
3
IO — VIN
16
12
8
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
–25˚C
10000
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
4
3
0
0.1
0.3
1
3
10
Collector to base voltage
2
300
0
Cob — VCB
20
VCE=10V
0.01
Collector to emitter voltage VCE (V)
24
hFE — IC
400
Forward current transfer ratio hFE
300
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
Transistors with built-in Resistor
UNR1221/1222/1223/1224
Characteristics charts of UNR1222
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
250
IB=1.0mA
0.9mA
200
0.8mA
0.7mA
150
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
VCE=10V
0.01
0
0
2
4
6
8
10
10
3
30
100
100
–25˚C
50
300
1000
1
3
6
4
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
Output current IO (µA)
8
10
Collector current IC (mA)
IO — VIN
10000
f=1MHz
IE=0
Ta=25˚C
10
25˚C
Collector current IC (mA)
Cob — VCB
12
Ta=75˚C
150
0
1
12
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
hFE — IC
200
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
300
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
0.03
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR1223
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
IB=1.0mA
0.9mA
0.8mA
160
120
0.7mA
0.6mA
0.5mA
80
0.4mA
0.3mA
40
0.2mA
0.1mA
hFE — IC
IC/IB=10
30
10
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
Ta=75˚C
VCE=10V
25˚C
150
100
–25˚C
50
0
0.01
0
200
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
1
3
10
30
100
300
Collector current IC (mA)
1000
1
3
10
30
100
300
1000
Collector current IC (mA)
3
Transistors with built-in Resistor
UNR1221/1222/1223/1224
Cob — VCB
IO — VIN
10000
10
8
6
4
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
12
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
0.03
1
0.4
100
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UNR1224
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
250
IB=1.0mA
200
0.9mA
0.8mA
150
0.7mA
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
100
0
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
2
4
6
8
10
12
3
–25˚C
50
30
100
300
1
1000
3
6
4
30
100
300
1000
VIN — IO
1000
VO=5V
Ta=25˚C
3000
300
1000
100
Input voltage VIN (V)
8
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
10
10
10000
f=1MHz
IE=0
Ta=25˚C
25˚C
100
Collector current IC (mA)
Cob — VCB
12
Ta=75˚C
150
0
1
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
VCE=10V
0.01
0
300
100
30
10
VO=0.2V
Ta=25˚C
30
10
3
1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
4
hFE — IC
200
Forward current transfer ratio hFE
300
30
VCB
100
(V)
1
0.4
0.3
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.1
0.1
0.3
1
3
10
30
Output current IO (mA)
100
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
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2002 JUL