Composite Transistors UP04401 Silicon PNP epitaxial planar type 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) 1 (0.20) 4 ■ Features • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.10±0.02 1.60±0.05 5 1.20±0.05 6 Unit: mm 0.20+0.05 –0.02 (0.30) For general amplification Display at No.1 lead ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) VCEO VEBO −50 −7 V V Collector current IC −100 mA Peak collector current ICP −200 mA Total power dissipation PT 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 5˚ 0.10 max. • 2SB0709A × 2 0.55±0.05 ■ Basic Part Number 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: 5K Internal Connection 6 5 Tr1 1 4 Tr2 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA hFE VCE = −10 V, IC = −2 mA 390 − 0.5 V Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IC = −100 mA, IB = −10 mA Min Typ Max Unit V 180 − 0.3 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2003 SJJ00231BED 1 UP04401 IC VCE −120 125 −100 100 75 50 25 0 80 120 −250 µA −200 µA −60 −150 µA −40 −100 µA −20 −50 µA 160 0 Ambient temperature Ta (°C) −2 −4 −6 −8 VCE = −10 V Ta = 25°C Collector current IC (mA) −3 −2 −1 0 − 0.2 − 0.4 25°C −80 Ta = 75°C − 0.6 −25°C −60 −40 0 25°C −25°C 200 100 −10 −102 Collector current IC (mA) 2 −103 Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE Ta = 75°C 400 −1 − 0.4 − 0.6 − 0.8 −1.0 −10 −1.2 IC / IB = 10 −1 Ta = 75°C 25°C −25°C 10 f = 1 MHz Ta = 25°C 1 0 −10 −20 −30 Collector-base voltage VCB (V) SJJ00231BED −10−3 −1 −10 −102 Collector current IC (mA) Cob VCB 500 0 −10−1 − 0.2 Base-emitter voltage VBE (V) VCE = −10 V − 0.8 −10−2 0 − 0.8 − 0.4 Base current IB (mA) −10−1 hFE IC 300 0 VCE(sat) IC VCE = −10 V Base-emitter voltage VBE (V) 600 0 −12 −20 0 −40 IC VBE −120 −100 Base current IB (mA) −10 −80 Collector-emitter voltage VCE (V) IB VBE −4 VCE = −10 V Ta = 25°C −120 IB = −300 µA Collector-emitter saturation voltage VCE(sat) (V) 40 Ta = 25°C −80 0 0 IC I B −160 Collector current IC (mA) Collector current IC (mA) Total power dissipation PT (mW) PT Ta 150 −40 −103 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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