PANASONIC UP04401

Composite Transistors
UP04401
Silicon PNP epitaxial planar type
5˚
2
3
(0.50)(0.50)
1.00±0.05
1.60±0.05
(0.20)
1
(0.20)
4
■ Features
• Two elements incorporated into one package
(Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half
0.10±0.02
1.60±0.05
5
1.20±0.05
6
Unit: mm
0.20+0.05
–0.02
(0.30)
For general amplification
Display at No.1 lead
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−60
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCEO
VEBO
−50
−7
V
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
0 to 0.02
5˚
0.10 max.
• 2SB0709A × 2
0.55±0.05
■ Basic Part Number
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: 5K
Internal Connection
6
5
Tr1
1
4
Tr2
2
3
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−60
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −10 V, IB = 0
−100
µA
hFE
VCE = −10 V, IC = −2 mA
390

− 0.5
V
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCE(sat)
fT
Cob
Conditions
IC = −100 mA, IB = −10 mA
Min
Typ
Max
Unit
V
180
− 0.3
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
VCB = −10 V, IE = 0, f = 1 MHz
2.7
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
SJJ00231BED
1
UP04401
IC  VCE
−120
125
−100
100
75
50
25
0
80
120
−250 µA
−200 µA
−60
−150 µA
−40
−100 µA
−20
−50 µA
160
0
Ambient temperature Ta (°C)
−2
−4
−6
−8
VCE = −10 V
Ta = 25°C
Collector current IC (mA)
−3
−2
−1
0
− 0.2
− 0.4
25°C
−80
Ta = 75°C
− 0.6
−25°C
−60
−40
0
25°C
−25°C
200
100
−10
−102
Collector current IC (mA)
2
−103
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Forward current transfer ratio hFE
Ta = 75°C
400
−1
− 0.4
− 0.6
− 0.8
−1.0
−10
−1.2
IC / IB = 10
−1
Ta = 75°C
25°C
−25°C
10
f = 1 MHz
Ta = 25°C
1
0
−10
−20
−30
Collector-base voltage VCB (V)
SJJ00231BED
−10−3
−1
−10
−102
Collector current IC (mA)
Cob  VCB
500
0
−10−1
− 0.2
Base-emitter voltage VBE (V)
VCE = −10 V
− 0.8
−10−2
0
− 0.8
− 0.4
Base current IB (mA)
−10−1
hFE  IC
300
0
VCE(sat)  IC
VCE = −10 V
Base-emitter voltage VBE (V)
600
0
−12
−20
0
−40
IC  VBE
−120
−100
Base current IB (mA)
−10
−80
Collector-emitter voltage VCE (V)
IB  VBE
−4
VCE = −10 V
Ta = 25°C
−120
IB = −300 µA
Collector-emitter saturation voltage VCE(sat) (V)
40
Ta = 25°C
−80
0
0
IC  I B
−160
Collector current IC (mA)
Collector current IC (mA)
Total power dissipation PT (mW)
PT  Ta
150
−40
−103
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP