Composite Transistors XN06214 (XN6214) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 5 1.50+0.25 –0.05 4 ■ Features 5˚ For switching/digital circuits 0.16+0.10 –0.06 1.1+0.2 –0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ • UNR2214 (UN2214) × 2 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: AA Internal Connection 4 5 6 Tr1 Tr2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA hFE VCE = 10 V, IC = 5 mA 80 hFE(Small VCE = 10 V, IC = 5 mA 0.50 Forward current transfer ratio Min Typ 1 Collector-base voltage (Emitter open) hFE ratio * Conditions 2 Max Unit V V 0.1 µA 0.99 /Large) Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.25 4.9 V V 0.2 V Input resistance R1 −30% 10 +30% kΩ Resistance ratio R1 / R 2 0.17 0.21 0.25 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: July 2003 SJJ00103BED 1 XN06214 IC VCE VCE(sat) IC 160 IB = 1.0 mA 400 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C 300 200 120 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 40 0.2 mA 100 0.1 mA 0 40 80 120 0 160 Ambient temperature Ta (°C) 0 Forward current transfer ratio hFE VCE = 10 V 300 Ta = 75°C 200 25°C −25°C 100 10 6 8 100 1 000 Collector current IC (mA) 6 5 3 2 0 0.1 1 10 Collector-base voltage VCB (V) Input voltage VIN (V) 1 0.1 10 100 Output current IO (mA) 2 1 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1 1 10 100 Collector current IC (mA) 104 VO = 5 V Ta = 25°C 103 102 10 1 VO = 0.2 V Ta = 25°C 1 10 IO VIN 4 10 0.01 0.1 12 f = 1 MHz IE = 0 Ta = 25°C VIN IO 100 10 IC / IB = 10 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 1 4 100 Collector-emitter voltage VCE (V) 400 0 2 Output current IO (µA) 0 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 500 SJJ00103BED 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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