Composite Transistors XP0111F (XP111F) Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number • UNR211F (UN211F) × 2 0.9±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ 1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: 7O Internal Connection 5 4 Tr1 Tr2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 −1.0 mA hFE VCE = −10 V, IC = −5 mA 30 hFE(Small VCE = −10 V, IC = −5 mA 0.50 hFE Ratio * Min Typ 3 Collector-base voltage (Emitter open) Forward current transfer ratio Conditions 2 Max Unit V V µA 0.99 /Large) Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = − 0.3 mA Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ − 0.25 V − 0.2 V −4.9 V Input resistance R1 −30% 4.7 +30% kΩ Resistance ratio R1 / R 2 0.37 0.47 0.57 Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00132BED 1 XP0111F IC VCE Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −200 200 −160 150 −120 100 50 0 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 0 0 40 80 120 160 − 0.2 mA −2 0 120 Ta = 75°C 25°C −25°C 40 −10 −8 −100 −1 000 Collector current IC (mA) 6 5 3 2 Input voltage VIN (V) 25°C − 0.1 −25°C − 0.01 − 0.1 −1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) −1 − 0.1 −10 −10 −100 Collector current IC (mA) −104 VO = −5 V Ta = 25°C −103 −102 −10 1 VO = − 0.2 V Ta = 25°C −1 Ta = 75°C IO VIN 4 −10 − 0.01 − 0.1 −1 f = 1 MHz IE = 0 Ta = 25°C VIN IO −100 −10 Output current IO (µA) Forward current transfer ratio hFE VCE = −10 V 0 −1 −6 IC / IB = 10 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 160 80 −4 − 0.1 mA −10 −12 −100 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 Output current IO (mA) 2 VCE(sat) IC −240 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 250 SJJ00132BED −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) −1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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