ICs for MD System AN22011A 3-beam MD system pre-amplifier ■ Overview ■ Features Unit: mm 9.00±0.20 7.00±0.10 25 36 24 7.00±0.10 9.00±0.20 (0.75) 37 0.50 12 0.20±0.05 (1.00) 0.10 0.10 M 0.10+0.10 -0.05 1 (0.75) (1.00) 1.20 max. 13 48 0.15±0.05 The AN22011A incorporates such functions as RF signal processing, servo signal processing, ADIP signal processing and laser control. This is an RF IC that can constitute the MD system using 3-beam pick-up in combination with the digital signal processing LSI MN66621. The IC allows us to achieve a considerable low power dissipation as well as its low supply voltage operation (VCC = 2.1 V to 3.6 V) due to our introduction of digital matrix (PD = 11 mW at VCC = 2.1 V). The IC can be used in a wide range of applications from a stand-alone system to a portable system. Seating plane 0° to 8° 0.50±0.10 • 3-beam system pick-up • RF signal processing • Servo signal processing • Laser power control function • Low supply voltage operation (2.1 V to 3.6 V) • Ultra low power consumption (min. 11 mW) • Thin package adopted (Mold thickness: 1 mm) TQFP048-P-0707B (Lead-free package) ■ Applications • MD player/recorder • Home audio systems/mini systems • Portable audio • Car audio Publication date: June 2002 SDD00024AEB 1 2 SDD00024AEB Pickup PD PD Laser IV PD PD IV PD PD PD PD PD Pickup 42 VREF 47 48 F E 46 45 44 1 2 VREF LDON VCC VREF VREF VREF 35 34 33 32 3 4 LPF 3 tap 3 tap SW 3 tap 3 tap 3 tap 3 tap 5 LDON MONIOFF NRFSTBY CLV2 36 VREF VREF 41 D RF1 40 C 43 39 B RF2 38 VREF 37 A Thermistor resistance 7 28 8 AGC 9 NRFSTBY VREF VREF EQ VREF 6 29 Switch 30 Switching signal 31 GND2 26 CLV2 25 10 12 GND1 11 Peak detector Bottom detector 3Tenv MONIOFF Band gap × 2 BPF × 1 BPF 27 13 14 15 16 17 18 19 20 21 22 23 24 VCC VCC VREF Servo LSI Microcomputer AN22011A ■ Block Diagram AN22011A ■ Pin Descriptions Pin No. Symbol Description 1 LDO LD amplifier output pin 2 LDIN LD amplifier reverse input pin Pin No. Symbol 26 Description OFSON Te stray light canceling operation setting pin 3 APCPD Photo diode light quantity detector pin 27 4 APCREF APC amplifier reference voltage input pin 28 NREC Rec/playback switching signal input pin RFSWHL Reflection ratio H/L switching signal input pin 5 ARFO RF amplifier output pin 6 N.C. 29 7 EQIN EQ input pin 30 GND2 N.C. 8 CRFAGC RFAGC capacitor pin 31 9 OUTRF EFM output pin 32 RFSWPG Pit/Grv switching signal input pin GND pin 2 MONIOFF 3TMON circuit control signal input pin 33 CLV2 ADIP BPF switching signal input pin PEAK EFM bright level detection output pin 34 LDON APC circuit control signal input pin 12 GND1 GND pin 1 35 13 BOTM EFM dark level detection output pin 36 14 CEA 3T envelope detection capacitor pin 37 10 N.C. 11 15 MON3T 3T envelope output pin NRFSTBY Standby control signal input pin TEMP Temperature sensor amplifier output pin TEMPIN Temperature sensor amplifier input pin 38 A A signal input pin 16 EE E signal I-V converting output pin 39 B B signal input pin 17 FF F signal I-V converting output pin 40 C C signal input pin 18 VCC VCC pin 41 D D signal input pin 19 OFSIN Te stray light canceling pin 42 VREF Reference signal output pin 20 N.C. 43 RF2 RF2 signal input pin 21 FF2 (A + C) signal I-V converting output pin 44 RF1 RF1 signal input pin 22 FF1 (B + D) signal I-V converting output pin 45 N.C. 23 N.C. 46 N.C. 24 N.C. 47 F F signal input pin 25 ADIP ADIP signal output pin 48 E E signal input pin ■ Absolute Maximum Ratings Parameter Supply voltage Supply current Setting pin upper limit Power dissipation *2 *1 Operating ambient temperature Storage temperature *1 *1 Symbol Rating Unit VCC 4.0 V ICC 7.5 mA VINH 3.6 V PD 30 mW Topr −30 to +85 °C Tstg −55 to +125 °C Note) *1: Except for power dissipation, operating ambient temperature and storage temperature, all ratings are for Ta = 25°C. *2: Setting pin refers to OFSON (pin 26), NREC (pin 27), RFSWHL (pin 28), RFSWPG (pin 29), MONIOFF (pin 32), CLV2 (pin 33), LDON (pin 34), NRFSTBY (pin 35). SDD00024AEB 3 AN22011A ■ Recommended Operating Range Parameter Supply voltage Symbol Range Unit VCC 2.1 to 3.6 V ■ Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit No load consumption current 1 ITOTAL1 Normal mode 4.5 5.5 6.5 mA No load consumption current 2 ITOTAL2 Sleep mode 200 300 400 µA VREF offset ∆VOVB Normal mode −50 0 50 mV ZVB I42 = ±1.5 mA 5 Ω VLDOFF APC OFF mode 0.2 V LD amplifier gain playback mode GLDP APC ON mode −23 −20 −17 dB LD amplifier gain recording mode GLDR APC ON mode −5.5 −2.5 0.5 dB Temperature amplifier gain GTM V37 = VREF ± 0.75 V −2 0 2 dB FF1 offset ∆VF1 Pit high reflection ratio mode −100 0 100 mV FF2 offset ∆VF2 Pit high reflection ratio mode −100 0 100 mV FF1 gain pit high reflection ratio mode ZFIRO Pit high reflection ratio mode 46.2 57.7 69.2 kΩ FF1 gain pit low reflection ratio mode ZFIRA Pit low reflection ratio mode 197 250 303 kΩ FF1 gain record mode ZFIRE Record mode 17.5 21.9 26.3 kΩ VREF output impedance LD amplifier OFF operation FF2 relative gain pit high reflection ratio mode ∆ZF2RO Pit high reflection ratio mode −2 0 2 dB FF2 relative gain pit low reflection ratio mode ∆ZF2RA Pit low reflection ratio mode −2 0 2 dB FF2 relative gain record mode ∆ZF2RE Record mode −2 0 2 dB FF1 frequency characteristic ∆GF1 Pit high reflection ratio mode V38: 3 kHz, 30 kHz Sine wave −9 −6 −3 dB FF2 frequency characteristic ∆GF2 Pit high reflection ratio mode V39: 3 kHz, 30 kHz Sine wave −9 −6 −3 dB EE offset ∆VEE Pit high reflection ratio mode −750 −600 −450 mV FF offset ∆VFF Pit high reflection ratio mode −750 −600 −450 mV EE gain pit high reflection ratio mode ZEERO Pit high reflection ratio mode 148 185 222 kΩ EE gain pit low reflection ratio mode ZEERA Pit low reflection ratio mode 776 970 1 164 kΩ EE gain record mode ZEERE Record mode 88 110 132 kΩ FF relative gain pit high reflection ratio mode ∆ZFFRO Pit high reflection ratio mode −2 0 2 dB FF relative gain pit low reflection ratio mode ∆ZFFRA Pit low reflection ratio mode −2 0 2 dB 4 SDD00024AEB AN22011A ■ Electrical Characteristics at Ta = 25°C (continued) Parameter Symbol Conditions Min Typ Max Unit Record mode −2 0 2 dB FF relative gain record mode ∆ZFFRE EE frequency characteristics ∆GEE Pit high reflection ratio mode V48: 1.5 kHz, 15 kHz Sine wave −6 −3 − 0.5 dB FF frequency characteristics ∆GFF Pit high reflection ratio mode V47: 1.5 kHz, 15 kHz Sine wave −6 −3 − 0.5 dB Ram mode Stray light canceling mode 0.4 0.5 0.6 Te stray light canceling operation ∆TOFS ADIP gain GAD1 Record mode Line double speed mode 24.0 27.0 30.0 dB ADIP center frequency FAD1 Record mode Line double speed mode 35.2 44.0 52.8 kHz ADIP band width ∆FAD1 Record mode Line double speed mode 23.7 29.6 35.5 kHz ADIP relative gain typical speed mode ∆GAD2 Record mode Typical speed mode −3 0 3 dB RF amplifier gain groove mode GRFG V43: 100 kHz Sine wave Groove mode 19 22 25 dB RF amplifier gain pit low reflection ratio mode GRFPL V43: 100 kHz Sine wave Pit low reflection ratio mode 3 6 9 dB RF amplifier gain pit high reflection ratio mode GRFPH V43: 100 kHz Sine wave Pit high reflection ratio mode −11.5 −8.5 −5.5 dB RF amplifier frequency characteristics ∆GRFG groove mode V43: 5 MHz Sine wave Groove mode −3 dB RF amplifier frequency characteristics ∆GRFPL pit low reflection ratio mode V43: 5 MHz Sine wave Pit low reflection ratio mode −3 dB RF amplifier frequency characteristics ∆GRFPH pit high reflection ratio mode V43: 5 MHz Sine wave Pit high reflection ratio mode −3 dB V7: 400 kHz, 1.44 MHz Sine wave V8 = VREF 2.5 3.5 4.5 dB V7: 500 kHz Sine wave 0.4 0.5 0.6 V[p-p] −140 −110 −80 µA 0.1 0.4 0.7 µA −200 0 200 mV 80 110 −200 0 200 mV EFM bottom detecting relative level ∆VBOTM V7: 720 kHz AM modulation Sine wave (1 kHz, 30%) −20 0 20 mV[p-p] 3T element envelope extracting level 125 185 EQ boost gain ∆GEQ AGC operation VOMRFV AGC discharge current IAGC1 V7: sin 500 mV[p-p], 720 kHz V8 = VREF AGC charging current IAGC2 V7 = VREF, V8 = VREF EFM Peak peak detecting offset ∆VPE V7 = VREF EFM Peak peak detecting level VPEAK V7: 720 kHz AM modulation Sine wave (1 kHz, 30%) EFM bottom detecting offset ∆VBO V7 = VREF V3TMON V7: 720 kHz AM modulation Sine wave (5 kHz, 5%) SDD00024AEB 140 mV[p-p] 245 mV[p-p] 5 AN22011A ■ Usage Notes 1. Operation mode setting • Gain switch setting NREC (Pin27) RFSWHL (Pin28) RFSWPG (Pin29) Operation mode H H H Pit high reflection ratio mode H L H Pit low reflection ratio mode H L L Groove mode L L L Record mode • 3T detection circuit mode switch setting MONIOFF (Pin32) Operation mode H 3T detection circuit off L 3T detection circuit on • ADIP BPF mode switch setting CLV2 (Pin33) Operation mode BPF center frequency H Typical speed mode fO = 22.0 kHz L Line double speed mode fO = 44.0 kHz Note) The values shown on the list are for design purpose. • APC mode setting LDON (Pin34) Operation mode H APC circuit on L APC circuit off • Power saving mode setting NRFSTBY (Pin35) Operation mode H Normal operation L Power saving operation • Te stray light cancellation setting OFSON (Pin26) Operation mode H Cancellation circuit on L Cancellation circuit off Note) This function is valid only for reading on the writable disk. 6 SDD00024AEB AN22011A ■ Usage Notes (continued) 2. Setting pin input voltage Set the input voltages for OFSON (Pin26), NREC (Pin27), RFSWHL (Pin28), RFSWPG (Pin29), MONIOFF (Pin32), CLV2 (Pin33), LDON (Pin34) and NRFSTBY (Pin35). As listed below. Setting Input voltage H 1.4 V to 3.6 V L 0.7 V or less The related equivalent circuits are as follows. OFSON 160 kΩ 33 kΩ NREC RFSWHL RFSWPG CLV2 MONIOFF 22.8 kΩ 100 kΩ NRFSTBY 200 kΩ LDON 60 kΩ 60 kΩ 33 kΩ 1 kΩ 140 kΩ 140 kΩ 100 kΩ Note) The resistance values are for designing. SDD00024AEB 7 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY