VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A FEATURES • • • • • • • • • • MAGN-A-PAK High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY IT(AV) 230 A Type Modules - Thyristor, Standard Package MAGN-A-PAK Circuit Two SCRs doubler circuit This new VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) VALUES 85 °C 230 50 Hz 7500 60 Hz 7850 IT(RMS) 510 ITSM I2t 50 Hz 280 60 Hz 260 I2√t 280 VDRM/VRRM TJ Range UNITS A kA2s kA2√s 800 to 2000 V -40 to 130 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSK.230- VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 IRRM/IDRM AT 130 °C MAXIMUM mA 50 Revision: 17-Jul-14 Document Number: 93053 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) Maximum peak, one-cycle on-state non-repetitive, surge current ITSM Maximum I2t for fusing I2t Maximum I2√t for fusing Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance I2√t VT(TO)1 VT(TO)2 rt1 rt2 Maximum on-state voltage drop VTM Maximum holding current IH Maximum latching current IL TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms No voltage reapplied t = 8.3 ms t = 10 ms 100 % VRRM Sinusoidal reapplied t = 8.3 ms half wave, initial t = 10 ms No voltage TJ = TJ maximum reapplied t = 8.3 ms t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum ITM = π x IT(AV), TJ = TJ maximum, 180° conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C Anode supply = 12 V, resistive load = 1 Ω, gate pulse: 10 V, 100 μs, TJ = 25 °C VALUES 230 85 510 7500 7850 6300 6600 280 256 198 181 2800 1.03 1.07 0.77 0.73 UNITS A °C 1.59 V A kA2s kA2√s V mΩ 500 1000 mA SWITCHING PARAMETER Typical delay time Typical rise time SYMBOL td tr Typical turn-off time TEST CONDITIONS TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω tq VALUES 1.0 2.0 UNITS μs 50 to 150 BLOCKING PARAMETER SYMBOL Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = TJ maximum VALUES UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGT Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger IGT Maximum gate voltage that will not trigger Maximum gate current that willnot trigger Maximum rate of rise of turned-on current VGD IGD dI/dt TEST CONDITIONS tp ≤ 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum tp ≤ 5 ms, TJ = TJ maximum tp ≤ 5 ms, TJ = TJ maximum TJ = - 40 °C Anode supply = 12 V, TJ = 25 °C resistive load; Ra = 1 Ω TJ = TJ maximum TJ = - 40 °C Anode supply = 12 V, TJ = 25 °C resistive load; Ra = 1 Ω TJ = TJ maximum TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A, rated VDRM applied VALUES 10.0 2.0 3.0 5.0 4.0 3.0 2.0 350 200 100 0.25 10.0 500 UNITS W A V mA V mA A/μs Revision: 17-Jul-14 Document Number: 93053 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TJ Storage temperature range TStg Maximum thermal resistance, RthJC junction to case per junction Typical thermal resistance, RthCS case to heatsink per module MAP to heatsink Mounting torque ± 10 % busbar to MAP TEST CONDITIONS VALUES -40 to 130 -40 to 150 DC operation 0.125 Mounting surface flat, smooth and greased 0.02 UNITS °C K/W A mounting compound is recommended and the torque should be rechecked after a period of about 3 h to allow for the spread of the compound. 4 to 6 Nm 500 g 17.8 oz. MAGN-A-PAK Approximate weight Case style ΔR CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 0.009 0.010 0.010 0.020 0.032 DEVICES VSK.230- RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 0.007 0.011 0.015 0.020 0.033 UNITS K/W 130 VSK.230..Series RthJC (DC) = 0.125 K/W 120 110 Ø Conduction Angle 100 90 30° 60° 80 90° 120° 70 180° 60 0 40 80 120 160 200 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 240 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 VSK.230..Series RthJC (DC) = 0.125 K/W 120 110 Ø Conduction Period 100 90 30° 80 60° 90° 70 120° DC 180° 60 0 50 100 150 200 250 300 350 400 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Revision: 17-Jul-14 Document Number: 93053 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com 200 RMS limit 300 150 Ø Conduction Angle 100 VSK.230..Series Per Junction TJ = 130 °C 50 0 0 50 100 200 150 250 Average On-state Current (A) Peak Half Sine Wave On-State Current (A) 250 180° 120° 90° 60° 30° 7000 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 350 Vishay Semiconductors Maximum Average On-State Power Loss (W) 180° 120° 90° 60° 30° 7500 300 250 DC 200 RMS limit 150 Ø Conduction Period 100 VSK.230..Series Per Junction TJ = 130 °C 50 0 0 50 100 150 200 250 300 350 400 Average On-State Current (A) 5000 4500 4000 3500 3000 1 6500 6000 5500 5000 4500 4000 3500 3000 0.01 0.1 1 Pulse Train Duration (s) 60 1K 0.0 40 A= /W R -Δ 300 W K/ 400 R thS 0. 1 12 K/ K/ W W 0.1 6K / 0.2 W K/W 0.2 5K 0.3 /W K/W 0. 180° 120° 90° 60° 30° 03 Maximum Total On-State Power Loss (W) VSK.230..Series Per Junction 0. Conduction Angle 100 Maximum non repetitive surge current vs. pulse drain duration.Control of conduction may not be maintained. Initial TJ = 130 °C No voltage reapplied Rated VRRM applied 7000 W K/ 06 0. /W K 8 500 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 0 0. Ø VSK.230..Series Per Junction Fig. 6 - Maximum Non-Repetitive Surge Current 700 Ø at 60 Hz 0.0083 s at 50 Hz 0.0100 s 5500 Fig. 4 - On-State Power Loss Characteristics 600 Initial TJ = 130 °C 6000 Fig. 3 - On-State Power Loss Characteristics 350 At any rated load condition and with rated VRRM applied following surge 6500 200 VSK.230..Series Per Module TJ = 130 °C 100 0 0 100 200 300 400 Total RMS Output Current (A) 500 20 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics Revision: 17-Jul-14 Document Number: 93053 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors + 0. /W R -Δ 0.2 K/W 750 1 0.0 900 6K A= W 0.1 R thS 1050 W K/ /W - K/ 3K 180° (Sine) 180° (Rect.) W K/ 1200 0.1 0 .0 08 1350 06 0. Maximum Total Power Loss (W) 1500 K/W 600 1.5 K 450 /W 2 x VSK.230..Series Single phase bridge connected TJ = 130 °C 300 150 0 0 50 100 150 200 250 300 350 400 450 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics A= 0.0 0.1 /W 6K R thS W K/ 1000 W 1200 0.0 W W K/ 1400 0.0 01 K/ 5K K/ 120° (Rect.) - 02 04 0.0 03 1600 0. 0. 0. + 1800 0. /W 05 K/ 8K 600 3 x VSK.230..Series Three phase bridge connected TJ = 130 °C 400 200 /W R -Δ 800 W Maximum Total Power Loss (W) 2000 K/W 0.12 K/W 0.16 K/W 0.25 K /W 0 0 100 200 300 400 500 Total Output Current (A) 600 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) 10 000 1000 TJ = 25 °C TJ = 130 °C VSK.230..Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-State Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics Qrr - Typical Reverse Recovery Charge (μC) Instantaneous On-State Current (A) Fig. 9 - On-State Power Loss Characteristics 1800 VSK.230..Series Per Junction TJ = 130 °C 1600 ITM = 800 A 1400 500 A 300 A 1200 200 A 1000 100 A 800 50 A 600 400 200 0 10 20 30 40 50 60 70 80 90 100 dI/dt - Rate of Fall of On-State Current (A/μs) Fig. 11 - Reverse Recovery Charge Characteristics Revision: 17-Jul-14 Document Number: 93053 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated diF/dt : 20 V, 10 Ω; tr < = 1μs b) Recommended load line for < = 30% rated di/dt : 10 V, 20 Ω tr < = 1 μs 10 (1) PGM = 10 W, tp = 4 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 40 W, tp = 1 ms (4) PGM = 60 W, tp = 0.66 ms (a) (b) 1 Tj=-40 °C Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 VSK.230 Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) ZthJC - Transient Thermal Impedance (K/W) Fig. 12 - Gate Characteristics 1 Steady State Value: R thJC = 0.125 K/W (DC Operation) 0.1 VSK.230.. Series 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS-VS KT 230 1 2 3 - 20 PbF 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration (see dimensions - link at the end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see voltage ratings table) 5 - • None = standard production • PbF = lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 Revision: 17-Jul-14 Document Number: 93053 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION Two SCRs doubler circuit CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKT... KT ~ ~ + + - K1G1 G2K2 Available 800 V: contact factory for different requirements SCR/diode doubler circuit, positive control VSKH... KH ~ ~ + + - K1G1 Available 800 V: contact factory for different requirements SCR/diode doubler circuit, negative control VSKL... KL ~ ~ + + - - Available 800 V: contact factory for different requirements Two SCRs common cathodes VSKK... KK + + - - - G2K2 Available 800 V: contact factory for different requirements Two SCRs common anodes VSKV... KV - - + + + + K1G1 G2K2 Available 800 V: contact factory for different requirements LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95086 Revision: 17-Jul-14 Document Number: 93053 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MAGN-A-PAK DIMENSIONS in millimeters (inches) Ø 5.5 35 (1.38) 20 (0.79) 80 (3.15) 50 (1.97) 38 (1.5) 6 (0.24) 3 screws M8 x 1.25 28 (1.12) 6 (0.24) 9 (0.35) 10 (0.39) HEX 13 52 (2.04) 51 (2.01) 32 (1.26) 115 (4.53) 92 (3.62) Notes • Dimensions are nominal • Full engineering drawings are available on request • UL identification number for gate and cathode wire: UL 1385 • UL identification number for package: UL 94 V-0 Document Number: 95086 Revision: 03-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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