VSK.230..PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A FEATURES • • • • • • • • • • MAGN-A-PAK High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level DESCRIPTION This new VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. PRODUCT SUMMARY IT(AV) 230 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) VALUES 85 °C 230 50 Hz 7500 UNITS 510 IT(RMS) ITSM I2t 60 Hz 7850 50 Hz 280 60 Hz 260 I2√t VDRM/VRRM TJ Range A kA2s 280 kA2√s Up to 2000 V - 40 to 130 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 VSK.230- Document Number: 93053 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] IRRM/IDRM AT 130 °C MAXIMUM mA 50 www.vishay.com 1 VSK.230..PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch ITSM t = 10 ms 100 % VRRM reapplied t = 10 ms I2t No voltage reapplied t = 8.3 ms t = 10 ms I2√t 85 °C 7850 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 8.3 ms Maximum I2√t for fusing A 7500 No voltage reapplied t = 8.3 ms t = 8.3 ms Maximum I2t for fusing UNITS 230 510 t = 10 ms Maximum peak, one-cycle on-state non-repetitive, surge current VALUES 6300 6600 280 256 198 2800 1.03 Low level value or threshold voltage VT(TO)1 High level value of threshold voltage VT(TO)2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.07 Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.77 High level value on-state slope resistance rt2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.73 ITM = π x IT(AV), TJ = TJ maximum, 180° conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.59 IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 IL Anode supply = 12 V, resistive load = 1 Ω, gate pulse: 10 V, 100 μs, TJ = 25 °C 1000 Maximum holding current Maximum latching current VTM kA2s 181 t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum Maximum on-state voltage drop A kA2√s V mΩ V mA SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω VALUES UNITS 1.0 2.0 μs 50 to 150 BLOCKING PARAMETER SYMBOL Maximum peak reverse and off-state leakage current RMS insulation voltage VINS Critical rate of rise of off-state voltage www.vishay.com 2 IRRM, IDRM dV/dt TEST CONDITIONS TJ = TJ maximum VALUES UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93053 Revision: 02-Jul-10 VSK.230..PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 230 A TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES PGM tp ≤ 5 ms, TJ = TJ maximum 10.0 Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp ≤ 5 ms, TJ = TJ maximum 3.0 Maximum peak negative gate voltage - VGT tp ≤ 5 ms, TJ = TJ maximum 5.0 TJ = - 40 °C 4.0 Maximum peak gate power Maximum required DC gate voltage to trigger VGT Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 °C A V 2.0 TJ = - 40 °C IGT W 3.0 TJ = TJ maximum Maximum required DC gate current to trigger UNITS 350 Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 °C mA 200 TJ = TJ maximum 100 Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/μs VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TEST CONDITIONS TJ - 40 to 130 Storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.125 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02 A mounting compound is recommended and the torque should be rechecked after a period of about 3 h to allow for the spread of the compound. 4 to 6 °C K/W MAP to heatsink Mounting torque ± 10 % busbar to MAP Approximate weight Nm 500 g 17.8 oz. Case style MAGN-A-PAK ΔR CONDUCTION PER JUNCTION DEVICES VSK.230- SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93053 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VSK.230..PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93053 Revision: 02-Jul-10 VSK.230..PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 230 A Fig. 7 - On-State Power Loss Characteristics Fig. 8 - On-State Power Loss Characteristics Fig. 9 - On-State Power Loss Characteristics Document Number: 93053 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VSK.230..PbF Series SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A Typical Reverse Recovery Charge - Qrr (µC) Vishay Semiconductors 1800 VSK.230 .. Series TJ = 130 °C Per Junction 1600 ITM = 800 A 1400 500 A 1200 300 A 200 A 1000 100 A 800 50 A 600 400 200 0 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Reverse Recovery Charge Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms; tr < =1µs b) Recommended load line for <=30% rated di/dt : 10V, 20ohms tr<=1 µs 10 (1) (2) (3) (4) PGM PGM PGM PGM = = = = 10W, tp = 4ms 20W, tp = 2ms 40W, tp = 1ms 60W, tp = 0.66ms (a) (b) Tj=25 °C 1 Tj=-40 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 VSK.230 Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Transient Thermal Impedance Z thJC (K/W) Fig. 12 - Gate Characteristics 1 Steady State Value: R thJC = 0.125 K/W (DC Operation) 0.1 VSK.230.. Series 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance ZthJC Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93053 Revision: 02-Jul-10 VSK.230..PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 230 A ORDERING INFORMATION TABLE Device code VSK T 230 1 2 3 - 20 PbF 4 5 1 - Module type 2 - Circuit configuration (see dimensions - link at the end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - None = Standard production PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKH... VSKT... VSKK... VSKL... ~ ~ ~ ~ ~ ~ + + + + + + + + - - - K1G1 G2K2 - - - - - K1G1 G2K2 VSKV... - - + + + Available 800 V; contact factory for different requirements. + K1G1 G2K2 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93053 Revision: 02-Jul-10 www.vishay.com/doc?95086 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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