VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series Datasheet

VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
New INT-A-PAK
• Designed and qualified for multiple level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IT(AV)
135 A to 160 A
Type
Modules - Thyristor, Standard
Package
INT-A-PAK
Circuit
Two SCRs doubler circuit, SCR/diode
doubler circuit, positive control,
SCR/diode doubler circuit, negative
control
APPLICATIONS
• DC motor control and drives
• Battery charges
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV)
CHARACTERISTICS
VSK.136..
85 °C
I2t
VSK.162..
UNITS
A
135
140
160
300
310
355
50 Hz
3200
4500
4870
60 Hz
3360
4712
5100
50 Hz
51.5
102
119
60 Hz
47
92.5
108
515.5
1013
1190
kA2s
400 to 1600
400 to 1600
400 to 1600
V
IT(RMS)
ITSM
VSK.142..
I2t
VRRM
Range
TJ
Range
-40 to 125
A
kA2s
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-VSK.136
VS-VSK.142
VS-VSK.162
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
IRRM/IDRM
AT 125 °C
mA
50
Revision: 11-Apr-14
Document Number: 94513
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle 
on-state, non-repetitive 
surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
Maximum
for fusing
I2t
A
85
°C
300
310
355
4500
4870
3360
4712
5100
2700
3785
4100
2800
3963
4300
51.5
102
119
47
92.5
108
36.5
71.6
84
33.3
65.4
76.7
t = 0.1 ms to 10 ms, no voltage reapplied
515.5
1013
1190
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I2t
160
85
3200
t = 10 ms
I2t
140
85
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM 
reapplied
No voltage
reapplied
Sine half wave,
initial TJ = 
TJ maximum
100 % VRRM 
reapplied
UNITS
135
As AC switch
t = 8.3 ms
Maximum I2t for fusing
VSK.136 VSK.142 VSK.162
Low level value of threshold voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum
0.86
0.83
0.8
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ maximum
1.05
1
0.98
Low level value on-state
slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum
2.02
1.78
1.67
High level value on-state
slope resistance
rt2
(I >  x IT(AV)), TJ maximum
1.65
1.43
1.38
A
kA2s
kA2s
V
m
Maximum on-state voltage drop
VTM
ITM =  x IT(AV), TJ = 25 °C, 180° conduction
1.57
1.55
1.54
V
Maximum forward voltage drop
VFM
ITM =  x IT(AV), TJ = 25 °C, 180° conduction
1.57
1.55
1.54
V
Maximum holding current
IH
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C
200
Maximum latching current
IL
Anode supply = 6 V resistive load = 1 
Gate pulse: 10 V, 100 μs, TJ = 25 °C
400
mA
SWITCHING
PARAMETER
SYMBOL
Typical delay time
tgd
Typical rise time
tgr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 
VALUES
UNITS
1
2
μs
50 to 200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
50
mA
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C
RMS insulation voltage
VINS
50 Hz, circuit to base,
all terminals shorted, t = 1 s
3500
V
TJ = TJ maximum,
exponential to 67 % rated VDRM
1000
V/μs
Critical rate of rise of
off-state voltage
dV/dt
Revision: 11-Apr-14
Document Number: 94513
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VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
TEST CONDITIONS
VALUES
PGM
tp  5 ms, TJ = TJ maximum
12
PG(AV)
f = 50 Hz, TJ = TJ maximum
3
IGM
Maximum peak negative
gate voltage
- VGT
VGT
4
Maximum gate voltage 
that will not trigger
VGD
Maximum gate current 
that will not trigger
IGD
Maximum rate of rise of 
turned-on current
dI/dt
V
2.5
TJ = - 40 °C
IGT
A
10
TJ = 25 °C
TJ = TJ maximum
Maximum required DC 
gate current to trigger
W
3
tp  5 ms, TJ = TJ maximum
TJ = - 40 °C
Maximum required DC
gate voltage to trigger
UNITS
Anode supply = 6 V, 
resistive load; Ra = 1 
1.7
270
TJ = 25 °C
150
TJ = TJ maximum
80
mA
0.3
V
10
mA
300
A/μs
TJ = TJ maximum, rated VDRM applied
TJ = TJ maximum, ITM = 400 A rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
VSK.136 VSK.142 VSK.162 UNITS
TJ
-40 to 125
Maximum storage 
temperature range
TStg
-40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface, smooth, flat and greased
°C
0.18
0.16
K/W
IAP to heatsink
Mounting
torque ± 10 %
0.18
0.05
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
busbar to IAP
Approximate weight
Case style
4 to 6
Nm
200
g
7.1
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.136
0.007
0.01
0.013
0.0155
0.017
0.009
0.012
0.014
0.015
0.017
VSK.142
0.0019
0.0019
0.0020
0.0020
0.0021
0.0018
0.0022
0.0023
0.0023
0.0020
VSK.162
0.0030
0.0031
0.0032
0.0033
0.0034
0.0029
0.0036
0.0039
0.0041
0.0040
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Apr-14
Document Number: 94513
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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350
VSK.136.. Series
RthJC (DC) = 0.18 K/W
120
110
Conduction Angle
100
90
30°
60°
90°
80
120°
180°
70
0
20
40
60
80
100
120
140
M axim um Averag e O n-state Pow er Loss (W )
Maximum Allowable Case Temperature (°C)
130
Vishay Semiconductors
DC
180
120
90
60
30
300
250
200
150
100
C o n d uc tio n P eriod
VSK .136.. Se ries
Per Junction
TJ = 12 5°C
50
0
0
50
Average Forward Current (A)
Conduction Period
100
30°
60°
90°
80
120°
180°
DC
70
0
50
100
150
200
Pea k H alf Sin e W a ve O n -sta te C urren t (A )
Maximum Allowable Case Temperature (°C)
110
90
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
RMS Limit
Conduction Angle
VSK.136.. Series
Per Junction
TJ = 125°C
50
0
0
30
60
90
VSK.136.. Series
Per Junction
14 0 0
1
10
100
120
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Ha lf Sine W a ve O n -sta te C urrent (A)
Maximum Average On-state Power Loss (W)
180
120
90
60
30
100
In itial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
26 0 0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
300
150
2 50
12 0 0
250
Fig. 2 - Current Ratings Characteristics
200
2 00
A t A ny R ate d Lo ad Co nditio n A n d W ith
R ated VRRM A pplied Follo w ing Surge .
28 0 0
Average On-state Current (A)
250
1 50
Fig. 4 - On-State Power Loss Characteristics
30 0 0
VSK.136.. Series
RthJC (DC) = 0.18 K/W
120
1 00
A vera ge O n -sta te C urrent (A)
Fig. 1 - Current Ratings Characteristics
130
RM S Lim it
150
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
35 0 0
Maxim um No n Repetitive Surge Curre nt
V ers us Pulse Train D uratio n. C ontrol
O f Co nductio n M ay Not Be M aintained.
In itial TJ = 125°C
No V oltag e Re ap plie d
Ra te d V
Re ap plie d
30 0 0
RRM
25 0 0
20 0 0
15 0 0
VSK.1 36.. Se ries
Pe r Ju nction
10 0 0
0 .0 1
0.1
1
Pulse Tra in D ura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
Document Number: 94513
4
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
/W
.01
= 0
4K
SA
0 .0
W
W
K/
W
W
- Δ
0 .4
K/ W
0 .6
R
200
K/
K/
K/
C onductio n Angle
250
25
08
300
0.
16
W
350
K/
0.
180
120
90
60
30
12
400
R th
0.
0.
M axim um Tota l O n -sta te Pow e r Loss (W )
450
K/ W
150
1 K/
W
100
VSK.136.. Se rie s
Pe r M odule
TJ = 12 5°C
50
0
0
50
100
150
200
250
300
0
Tota l R M S Outp ut C urre nt (A)
25
50
75
1 00
125
M axim um A llowab le Am bient Tem pera ture (°C)
Fig. 7 - On-State Power Loss Characteristics
hS
Rt
90 0
0.
K/
W
W
ΔR
0 .2
K/
-
50 0
08
/W
1K
60 0
12
0.0
180
(Sine )
180
(Re ct)
=
0.
W
0.
70 0
K/
80 0
A
04
M axim um To ta l P o we r Lo ss (W )
1 0 00
K/
W
40 0
0 .3 5
30 0
2 x VSK.136.. Series
Single P hase Brid ge
C onnected
T J = 125°C
20 0
10 0
K/ W
0. 6 K
/W
0
0
55
11 0
165
220
2 07 5
Total O utp ut C urre nt (A)
25
50
75
100
125
M axim um Allowab le Am bient Te m p era ture (°C )
Fig. 8 - On-State Power Loss Characteristics
Rt
A
hS
12 0 0
=
0.
04
W
R
K/
W
6K
/
W
0 . 25
Δ
3 x VSK.1 3 6.. Serie s
Th ree Ph a se B rid g e
C o n n ec te d
TJ = 1 2 5°C
K/
-
0 .1
60 0
30 0
08
0.1
W
0.
120
(Rec t)
90 0
K/
M a xim u m To ta l Po w e r Lo ss (W )
15 0 0
K/ W
0 .4 K
/W
1 K/ W
0
0
10 0
20 0
3 00
To ta l O u tp u t C u rre nt (A)
4 000
25
50
75
1 00
1 25
M axim u m A llo w a b le A m b ien t Tem p e ra tu re (°C)
Fig. 9 - On-State Power Loss Characteristics
Revision: 11-Apr-14
Document Number: 94513
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VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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35 0
VSK.142.. Series
R thJC (D C ) = 0.18 K/W
120
110
C o nd uctio n Angle
100
30
90
60
90
80
120
180
70
0
30
60
90
1 20
1 50
M axim um Averag e O n -state Pow er Loss (W )
M a xim um Allo w ab le C ase Tem peratur e (°C)
130
DC
180
120
90
60
30
30 0
25 0
20 0
R M S L im it
15 0
C o nd u c tio n Pe rio d
10 0
VSK .1 4 2 .. Se rie s
P er Ju n c tio n
TJ = 1 2 5°C
50
0
0
50
Fig. 10 - Current Ratings Characteristics
VSK.1 4 2 .. Se rie s
R thJC (D C ) = 0 .1 8 K /W
120
110
C o n d uc tio n P e rio d
100
30
60
90
90
120
80
180
DC
70
0
50
100
15 0
200
15 0
RMS Lim it
10 0
C o nd uc tio n Angle
VSK .142.. Series
Per Junction
TJ = 12 5°C
0
60
90
1 20
A t A ny Rated Lo ad Co nditio n A n d W ith
R ated V RRM A pplied Follo w ing Surge .
In itial TJJ= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
VSK.142.. Series
Per Junction
10
100
Fig. 14 - Maximum Non-Repetitive Surge Current
1 50
Averag e O n-state C urren t (A )
Fig. 12 - On-State Power Loss Characteristics
Pea k H alf Sin e W ave O n -sta te C urren t (A)
M axim um A ve ra ge O n -sta te Po w er Lo ss (W )
180
120
90
60
30
30
45 0 0
1
25 0
0
2 50
N um b er O f Eq ua l A m p litud e H a lf Cy cle C urrent P ulses (N )
Fig. 11 - Current Ratings Characteristics
50
2 00
15 0 0
25 0
Averag e O n-state C urrent (A)
20 0
1 50
Fig. 13 - On-State Power Loss Characteristics
Peak H a lf Sin e W a ve O n -stat e C urren t (A)
M axim um Allow a ble C ase Tem perature (°C)
130
1 00
Averag e O n-state C urren t (A )
A vera ge Forw a rd C urrent (A)
5 00 0
M axim um Non Repetitive Surge Current
V e rsus Pulse Train D uratio n. C o ntro l
O f Co nductio n Ma y No t Be M aintained .
4 50 0
In itial TJJ= 125°C
N o V oltag e Re a pp lied
Ra te d VR R M Re a pp lie d
4 00 0
3 50 0
3 00 0
2 50 0
2 00 0
VSK.1 42.. Se rie s
Pe r Ju nction
1 50 0
0 .0 1
0 .1
1
Pu lse Tra in D uration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
Document Number: 94513
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R th
SA
=0
/W
W
.0 1
K/
W
K/ W
R
- Δ
K/
4K
0 .6
K/
200
25
W
0 .4
W
0.
08
K/
K/
300
0.
12
16
180
120
90
60
30
0.0
0.
0.
M axim um Total O n-state Pow e r Lo ss (W )
400
W
K/ W
C o nductio n A n g le
100
1K
/W
VSK.142.. Se rie s
Per M odule
TJ = 125°C
0
0
50
100
150
200
250
Tota l R M S O utp ut C urre nt (A)
30 0
25
50
75
10 0
12 5
M axim um A llowa ble A m b ient Tem perature (°C)
Fig. 16 - On-State Power Loss Characteristics
1 00 0
R th
2 00
ΔR
100
To ta l O u tp ut C u rre nt (A )
-
0
W
0
K/
0 .2
W
2K
/W
0.1
6K
/
2 x VSK .1 4 2.. Se ries
Sin g le P h a se Brid g e
C o n n ec te d
T J = 12 5°C
20 0
K/
. 01
=0
40 0
W
180
(Sine )
180
(Re ct)
60 0
K/
0 .1
08
SA
04
M a xim um Tota l P o w er Lo ss (W )
0.
0.
80 0
W
5K
/W
0 .6 K
/W
0
3 00
25
50
75
10 0
12 5
M axim um A llowa ble A m b ient Tem perature (°C)
Fig. 17 - On-State Power Loss Characteristics
R th
0.
06
ΔR
0.1
W
-
8 00
K/
W
0.0
/
2K
0.
120
(Rec t)
0.0
W
12 0 0
=
K/
SA
04
Ma xim u m Total Power Lo ss (W )
16 0 0
8K
/W
K/
W
3 x VSK.142.. Series
Three P hase Brid ge 0 .1 6 K/
W
C o nnected
0.2 K/ W
TJ = 125°C
4 00
0
0
5 0 10 0 1 5 0 20 0 25 0 30 0 35 0 4 0 0 450 0
Total O utp ut C urre nt (A)
25
50
75
10 0
12 5
M axim um A llowab le Am bie nt Tem perature (°C)
Fig. 18 - On-State Power Loss Characteristics
Revision: 11-Apr-14
Document Number: 94513
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VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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40 0
VSK.162.. Series
R thJ C (D C ) = 0.16 K/W
120
110
C o nd uc tio n Angle
100
90
30
60
90
80
120
180
70
0
30
60
90
1 20
150
180
M a xim um A vera g e O n -sta te Pow e r Lo ss (W )
M a xim um A llow ab le C a se Tem p era ture (°C)
130
Vishay Semiconductors
DC
180
120
90
60
30
35 0
30 0
25 0
20 0
RM S Lim it
15 0
C o n du c tio n Pe rio d
10 0
VSK.162.. Series
Per Junctio n
TJ = 125°C
50
0
0
30
Averag e Fo rw ard C urrent (A)
Fig. 19 - Current Ratings Characteristics
4 50 0
VSK .162.. Series
R thJC (DC ) = 0.16 K/W
1 20
1 10
1 00
C on d uctio n P e rio d
30
90
60
80
90
120
70
180
DC
60
0
50
100
15 0
20 0
2 50
300
In itial TJ = 125°C
4 00 0
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3 50 0
3 00 0
2 50 0
2 00 0
VSK.162.. Series
Per Jun ction
1 50 0
1
Fig. 20 - Current Ratings Characteristics
10
3 00
180
120
90
60
30
2 50
2 00
RM S Lim it
1 50
1 00
50
C o nd uc tio n Angle
0
0
20
40
60
8 0 10 0 1 20 1 40 1 6 0 1 8 0
Averag e O n-state C urren t (A)
Fig. 21 - On-State Power Loss Characteristics
Peak Ha lf Sine W av e O n -sta te C urrent (A)
50 0 0
VSK .162.. Se ries
Per Junction
TJ = 125°C
10 0
Fig. 23 - Maximum Non-Repetitive Surge Current
4 00
M axim um Averag e O n-state Pow er Loss (W )
A t A ny R ate d Lo ad C on dition A n d W ith
Rate d VRRM A pplie d Fo llow ing Surg e.
Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N)
A vera ge O n -sta te C urrent (A)
3 50
9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0
Fig. 22 - On-State Power Loss Characteristics
Pea k H alf Sin e W a ve O n-state C urren t (A )
M axim um Allow a b le C ase Tem perature (°C)
1 30
60
Averag e O n -sta te C urren t (A )
M axim um Non Repetitive Surge Current
V e rsus Pulse Train D uratio n. C o ntro l
O f Co nductio n Ma y No t Be M aintained .
In itia l TJ = 125°C
No V olta ge Re ap plied
Ra te d VR R M Re ap plie d
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
VSK .162.. Series
Per Junction
15 0 0
0.0 1
0 .1
1
Pu lse Tra in D uration (s)
Fig. 24 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
Document Number: 94513
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
0. 0
W
=
K/
A
hS
K/
Rt
W
2
K/
W
ΔR
C onductio n An gle
W
K/
0 .1
200
08
W
0.1
300
04
0.
K/
400
06
180
120
90
60
30
500
0.
0.
M a xim um T ota l O n-state Pow e r Loss (W )
600
6K
/W
0.2
K/ W
VSK.162.. Se rie s
Pe r M odule
TJ = 125°C
100
0
0
100
200
400
0
300
Tota l RM S O utp ut C urre nt (A)
25
50
75
100
125
M axim um A llowab le Am b ie nt Tem p era ture (°C)
Fig. 25 - On-State Power Loss Characteristics
0.
8 00
W
W
0.3
3 00
0 .4
K/
ΔR
0.2
-
4 00
K/
K/
5 00
W
04
180
(Sine )
180
(Re ct)
K/
0.
6 00
12
=
0.
A
hS
7 00
08
Rt
M axim um Total P ower Lo ss (W )
9 00
W
K/ W
K/ W
2 x VSK.162.. Series 0 .6
K/ W
Single Phase Brid ge
1 K/ W
C onnected
TJ = 125°C
2 00
1 00
0
0
50
100
15 0
20 0
25 0
Tota l O utput C urrent (A)
0
3 00
25
50
75
10 0
12 5
M axim um A llo wa ble A m b ient Tem perature (°C)
Fig. 26 - On-State Power Loss Characteristics
04
A
K/
1 2 50
S
R th
0.
W
W
K/
K/
ΔR
0 .1
0 .2
5 00
2
120
(Rect)
7 50
08
0. 0
0.
1 0 00
=
W
M axim u m To tal Po wer Loss (W )
1 5 00
2 K
/W
K/ W
3 x VSK.162.. Series 0 .3 K
/W
Three Phase Brid ge
0. 6 K / W
C onnected
TJ = 12 5°C
2 50
0
0
50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 4050
Tota l Output C urrent (A)
25
50
75
100
125
M a xim um Allo w a b le A m b ie n t Te m p era tu re (°C)
Fig. 27 - On-State Power Loss Characteristics
Revision: 11-Apr-14
Document Number: 94513
9
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Vishay Semiconductors
1
Transient Thermal Impedance Z thJC
Instantaneous On-state Current (A)
10000
1000
TJ = 25˚C
TJ = 125˚C
100
10
VSK.136.. Series
Per Junction
1
0
1
2
3
4
5
Steady State Value
(DC Operation)
0.1
0.01
VSK.136.. Series
0.001
0.001
Instantaneous On-state Voltage (V)
Fig. 28 - On-State Voltage Drop Characteristics
1
1000
Transient Thermal Impedance Z thJC
Instantaneous On-state Current (A)
10
Fig. 31 - Thermal Impedance ZthJC Characteristics
10000
TJ = 25˚C
T = 125˚C
J
100
10
VSK.142.. Series
Per Junction
1
0
1
2
3
4
Steady State Value
(DC Operation)
0.1
VSK.142.. Series
0.01
0.01
5
Instantaneous On-state Voltage (V)
0.1
1
Square Wave Pulse Duration (s)
Fig. 29 - On-State Voltage Drop Characteristics
Fig. 32 - Thermal Impedance ZthJC Characteristics
10
1
1000
TJ = 25˚C
TJ = 125˚C
100
10
VSK.162.. Series
Per Junction
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 30 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z thJC
10000
Instantaneous On-state Current (A)
0.01
0.1
1
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
0.1
VSK.162.. Series
0.01
0.01
0.1
1
Square Wave Pulse Duration (s)
10
Fig. 33 - Thermal Impedance ZthJC Characteristics
Revision: 11-Apr-14
Document Number: 94513
10
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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10
Rec ta ng ula r g a te p ulse
a )Re c o m m end e d lo a d line fo r
ra ted d I/d t: 20 V, 20 W
tr = 0.5 s, tp >= 6 s
b )Re c o m m end e d loa d line fo r
<= 30% ra ted d I/d t: 15 V , 40 W
tr = 1 s, tp >= 6 s
(1)
(2)
(3)
(4)
PG M
PG M
PG M
PG M
=
=
=
=
200 W , tp = 300 s
60 W , tp = 1 m s
30 W , tp = 2 m s
12 W , tp = 5 m s
(4)
(3 ) (2)
(a)
(b )
T J = -40 °C
T J = 12 5 °C
1
T J = 25 °C
In stan ta neous G a te V olta ge (V )
1 00
Vishay Semiconductors
(1)
VG D
IG D
0 .1
0 .0 0 1
VSK.1 3 6 ..1 4 2 ..1 6 2 .. Se ries
0.0 1
0 .1
Frequen cy Lim ited by PG (AV )
1
10
100
1 00 0
Instan ta n eous G a te C urren t (A )
Fig. 34 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KT
1
2
162
16
PbF
3
4
5
1
-
Vishay Semiconductors product
2
-
Circuit configuration
3
-
Current rating: IT(AV)
4
-
Voltage code x 100 = VRRM
5
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Revision: 11-Apr-14
Document Number: 94513
11
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
~
VSKT...
+
Two SCRs doubler circuit
+
T
-
K1
K2
G1
G2
~
VSKH...
+
SCR/diode doubler circuit, positive control
H
+
-
K1
G1
~
VSKL...
+
SCR/diode doubler circuit, negative control
L
+
-
K2
G2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95067
Revision: 11-Apr-14
Document Number: 94513
12
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
29 (1.15)
28 (1.10)
9 (0.33)
30 (1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
23 (0.91)
7
6
4
5 (0.20)
5
23 (0.91)
1
3 screws M6 x 10
2
2.8 x 0.8
(0.11 x 0.03)
14.5 (0.57)
35 (1.38)
17 (0.67)
3
66 (2.60)
37 (1.44)
94 (3.70)
Document Number: 95067
Revision: 15-Feb-08
For technical questions, contact: [email protected]
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1
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000