VS-VSKU162...PbF, VS-VSKV162...PbF Series Datasheet

VS-VSKU162...PbF, VS-VSKV162...PbF Series
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Vishay Semiconductors
Thyristor/Thyristor, 160 A
(New INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
New INT-A-PAK
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
APPLICATIONS
• DC motor control and drives
IT(AV)
160 A
Type
Modules - Thyristor, Standard
Package
INT-A-PAK
• Battery charges
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
VALUES
85 °C
160
50 Hz
4870
60 Hz
5100
50 Hz
119
60 Hz
108
355
IT(RMS)
ITSM
I2t
I2t
1190
UNITS
A
kA2s
kA2s
VRRM
Range
1200 and 1600
V
TJ
Range
-40 to +125
°C
IRRM/IDRM
AT 125 °C
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-VSK.162
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
12
1200
1300
16
1600
1700
50
Revision: 20-Nov-15
Document Number: 95901
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ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle 
on-state, non-repetitive 
surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
355
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
°C
4870
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM 
reapplied
No voltage
reapplied
UNITS
160
As AC switch
t = 8.3 ms
Maximum I2t for fusing
VALUES
5100
A
4100
Sine half wave,
initial TJ = 
TJ maximum
100 % VRRM 
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
4300
119
108
84
kA2s
76.7
1190
Low level value of threshold voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum
0.8
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ maximum
0.98
Low level value on-state
slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum
1.67
High level value on-state
slope resistance
rt2
(I >  x IT(AV)), TJ maximum
1.38
kA2s
V
m
Maximum on-state voltage drop
VTM
ITM =  x IT(AV), TJ = 25 °C, 180° conduction
1.54
V
Maximum forward voltage drop
VFM
V
ITM =  x IT(AV), TJ = 25 °C, 180° conduction
1.54
Maximum holding current
IH
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C
200
Maximum latching current
IL
Anode supply = 6 V resistive load = 1 
Gate pulse: 10 V, 100 μs, TJ = 25 °C
400
mA
SWITCHING
PARAMETER
SYMBOL
Typical delay time
tgd
Typical rise time
tgr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 
VALUES
UNITS
1
2
μs
50 to 200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
50
mA
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C
RMS insulation voltage
VINS
50 Hz, circuit to base,
all terminals shorted, t = 1 s
3500
V
TJ = TJ maximum,
exponential to 67 % rated VDRM
1000
V/μs
Critical rate of rise of
off-state voltage
dV/dt
Revision: 20-Nov-15
Document Number: 95901
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VS-VSKU162...PbF, VS-VSKV162...PbF Series
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
TEST CONDITIONS
VALUES
PGM
tp  5 ms, TJ = TJ maximum
12
PG(AV)
f = 50 Hz, TJ = TJ maximum
3
IGM
Maximum peak negative
gate voltage
- VGT
VGT
4
Maximum gate voltage 
that will not trigger
VGD
Maximum gate current 
that will not trigger
IGD
Maximum rate of rise of 
turned-on current
dI/dt
V
2.5
TJ = - 40 °C
IGT
A
10
TJ = 25 °C
TJ = TJ maximum
Maximum required DC 
gate current to trigger
W
3
tp  5 ms, TJ = TJ maximum
TJ = - 40 °C
Maximum required DC
gate voltage to trigger
UNITS
Anode supply = 6 V, 
resistive load; Ra = 1 
1.7
270
TJ = 25 °C
150
TJ = TJ maximum
80
mA
0.3
V
10
mA
300
A/μs
VALUES
UNITS
TJ = TJ maximum, rated VDRM applied
TJ = TJ maximum, ITM = 400 A rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
-40 to +125
Maximum storage 
temperature range
TStg
-40 to +150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.16
Maximum thermal resistance,
case to heat sink per module
RthCS
Mounting surface, smooth, flat and greased
0.05
°C
K/W
IAP to heat sink
Mounting
torque ± 10 %
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
busbar to IAP
Approximate weight
4 to 6
Nm
200
g
7.1
oz.
Case style
INT-A-PAK
R CONDUCTION PER JUNCTION
VS-VSK.162
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.0030
0.0031
0.0032
0.0033
0.0034
0.0029
0.0036
0.0039
0.0041
0.0040
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 20-Nov-15
Document Number: 95901
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-VSKU162...PbF, VS-VSKV162...PbF Series
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40 0
R thJ C (D C ) = 0.16 K/W
120
110
C o nd uc tio n Angle
100
90
30
60
90
80
120
180
70
0
30
60
90
1 20
150
180
M a xim um A vera g e O n -sta te Pow e r Lo ss (W )
M a xim um A llow ab le C a se Tem p era ture (°C)
130
DC
180
120
90
60
30
35 0
30 0
25 0
20 0
RM S Lim it
15 0
C o n du c tio n Pe rio d
10 0
Per Junctio n
TJ = 125°C
50
0
0
Averag e Fo rw ard C urrent (A)
1 20
1 10
C on d uctio n P e rio d
30
60
90
120
70
180
DC
60
0
50
100
15 0
20 0
2 50
Pea k H alf Sin e W a ve O n-state C urren t (A )
M axim um Allow a b le C ase Tem perature (°C)
4 50 0
R thJC (DC ) = 0.16 K/W
80
300
Fig. 2 - Current Ratings Characteristics
3 00 0
2 50 0
2 00 0
Per Jun ction
1 50 0
2 00
RM S Lim it
1 50
1 00
50
C o nd uc tio n Angle
0
0
20
40
60
8 0 10 0 1 20 1 40 1 6 0 1 8 0
Averag e O n-state C urren t (A)
Fig. 3 - On-State Power Loss Characteristics
10
10 0
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Ha lf Sine W av e O n -sta te C urrent (A)
M axim um Averag e O n-state Pow er Loss (W )
180
120
90
60
30
2 50
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3 50 0
50 0 0
3 00
In itial TJ = 125°C
4 00 0
1
4 00
Per Junction
TJ = 125°C
A t A ny R ate d Lo ad C on dition A n d W ith
Rate d VRRM A pplie d Fo llow ing Surg e.
Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N)
A vera ge O n -sta te C urrent (A)
3 50
9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0
Fig. 4 - On-State Power Loss Characteristics
1 30
90
60
Averag e O n -sta te C urren t (A )
Fig. 1 - Current Ratings Characteristics
1 00
30
45 0 0
40 0 0
M axim um Non Repetitive Surge Current
Ve rsus Pulse Train D uratio n. Co ntro l
O f Co nductio n Ma y No t Be M aintained .
In itia l TJ = 125°C
No V olta ge Re ap plied
Ra te d VR R M Re ap plie d
35 0 0
30 0 0
25 0 0
20 0 0
Per Junction
15 0 0
0.0 1
0 .1
1
Pu lse Tra in D uration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 20-Nov-15
Document Number: 95901
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-VSKU162...PbF, VS-VSKV162...PbF Series
www.vishay.com
Vishay Semiconductors
=
0. 0
W
2
W
K/
W
-
W
ΔR
6K
/W
0.2
100
K/
200
K/
A
hS
K/
0 .1
C o nductio n A n gle
08
W
0.1
300
04
0.
K/
400
06
180
120
90
60
30
500
Rt
0.
0.
M a xim um T ota l O n-state Pow e r Loss (W )
600
K/ W
P e r M o d ule
T J = 12 5°C
0
0
100
200
400
0
300
25
50
75
100
125
M axim um A llowab le Am b ie nt Tem p era ture (°C)
Tota l RM S O utp ut C urre nt (A)
Fig. 7 - On-State Power Loss Characteristics
0.
8 00
W
K/ W
0 .4
K/ W
0 .6 K
/W
1 K/ W
Single Phase Brid ge
C onnected
TJ = 125°C
1 00
K/
ΔR
3 00
-
0.2
0.3
2 00
W
W
4 00
K/
K/
5 00
W
04
180
(Sine )
180
(Re ct)
K/
0.
6 00
12
=
0.
A
hS
7 00
08
Rt
M axim um Total P ower Lo ss (W )
9 00
0
0
50
100
15 0
20 0
25 0
0
3 00
Tota l O utput C urrent (A)
25
50
75
10 0
12 5
M axim um A llo wa ble A m b ient Tem perature (°C)
Fig. 8 - On-State Power Loss Characteristics
04
A
K/
1 2 50
S
R th
0.
W
W
K/
K/
-
2 K
/W
0 .2
0 .3
Three Phase Brid ge
C onnected
TJ = 12 5°C
ΔR
0 .1
5 00
2 50
2
120
(Rect)
7 50
08
0. 0
0.
1 0 00
=
W
M axim u m To tal Po wer Loss (W )
1 5 00
K/ W
K/ W
0. 6 K / W
0
0
50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 4050
Tota l Output C urrent (A)
25
50
75
100
125
M a xim um Allo w a b le A m b ie n t Te m p era tu re (°C)
Fig. 9 - On-State Power Loss Characteristics
Revision: 20-Nov-15
Document Number: 95901
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VS-VSKU162...PbF, VS-VSKV162...PbF Series
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1
1000
TJ = 25˚C
TJ = 125˚C
100
10
1
0
Fig. 10 - On-State Voltage Drop Characteristics
0.1
0.1
1
Square Wave Pulse Duration (s)
10
Fig. 11 - Thermal Impedance ZthJC Characteristics
Rec ta ngula r ga te p ulse
a )Re c o m m end e d lo a d line fo r
ra ted d I/d t: 20 V, 20 W
tr = 0.5 s, tp >= 6 s
b )Re c o m m end e d loa d line fo r
<= 30% ra ted d I/d t: 15 V , 40 W
tr = 1 s, tp >= 6 s
(1)
(2)
(3)
(4)
PG M
PG M
PG M
PG M
=
=
=
=
200 W , tp = 300 s
60 W , tp = 1 m s
30 W , tp = 2 m s
12 W , tp = 5 m s
(4)
(3 ) (2)
(a)
(b )
T J = -40 °C
T J = 12 5 °C
1
T J = 25 °C
In stan ta neous G a te V olta ge (V )
10
(DC Operation)
0.01
0.01
1
2
3
4
5
Instantaneous On-state Voltage (V)
1 00
Steady State Value
Transient Thermal Impedance Z thJC
Instantaneous On-state Current (A)
10000
(1)
VG D
IG D
0 .1
0 .0 0 1
Frequen cy Lim ited by PG (AV )
0.0 1
0 .1
1
10
100
1 00 0
Instan ta n eous G a te C urren t (A )
Fig. 12 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
KU
162
16
PbF
1
2
3
4
5
1
-
Vishay Semiconductors product
2
-
Circuit configuration
3
-
Current rating: IT(AV)
4
-
Voltage code x 100 = VRRM
5
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Revision: 20-Nov-15
Document Number: 95901
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
(1)
~
Common cathode configuration
1
~
VSKU
-
U
(2)
2
3
K1
K2
G1
G2
(3)
G1 K1 K2 G2
(1)
~
VSKV
Common anode configuration
1
~
V
+
+
+
(2)
2
3
K1
K2
G1
G2
+
(3)
G1 K1 K2 G2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95067
Revision: 20-Nov-15
Document Number: 95901
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
29 (1.15)
28 (1.10)
9 (0.33)
30 (1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
23 (0.91)
7
6
4
5 (0.20)
5
23 (0.91)
1
3 screws M6 x 10
2
2.8 x 0.8
(0.11 x 0.03)
14.5 (0.57)
35 (1.38)
17 (0.67)
3
66 (2.60)
37 (1.44)
94 (3.70)
Document Number: 95067
Revision: 15-Feb-08
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1
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Revision: 02-Oct-12
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