VISHAY VSKT162

VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
New INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
APPLICATIONS
• DC motor control and drives
PRODUCT SUMMARY
IT(AV)
• Battery charges
135 A to 160 A
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV)
CHARACTERISTICS
VSK.136..
VSK.142..
VSK.162..
UNITS
135
140
160
A
300
310
355
50 Hz
3200
4500
4870
60 Hz
3360
4712
5100
50 Hz
51.5
102
119
60 Hz
47
92.5
108
515.5
1013
1190
85 °C
IT(RMS)
ITSM
I2t
I2√t
A
kA2s
kA2√s
VRRM
Range
400 to 1600
V
TJ
Range
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VSK.136
VSK.142
VSK.162
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
Document Number: 94513
Revision: 04-May-10
For technical questions, contact: [email protected]
IRRM/IDRM
AT 125 °C
mA
50
www.vishay.com
1
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
I2√t
A
°C
85
85
310
355
t = 10 ms
3200
4500
4870
3360
4712
5100
2700
3785
4100
2800
3963
4300
51.5
102
119
47
92.5
108
36.5
71.6
84
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
UNITS
160
85
t = 8.3 ms
Maximum I2√t for fusing
140
300
t = 10 ms
I2t
135
As AC switch
t = 8.3 ms
Maximum I2t for fusing
VSK.136 VSK.142 VSK.162
33.3
65.4
76.7
515.5
1013
1190
Low level value of threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
0.86
0.83
0.8
High level value of threshold voltage
VT(TO)2
(I > π x IT(AV)), TJ maximum
1.05
1
0.98
Low level value on-state
slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
2.02
1.78
1.67
High level value on-state
slope resistance
rt2
(I > π x IT(AV)), TJ maximum
1.65
1.43
1.38
A
kA2s
kA2√s
V
mΩ
Maximum on-state voltage drop
VTM
ITM = π x IT(AV), TJ = 25 °C, 180° conduction
1.57
1.55
1.54
V
Maximum forward voltage drop
VFM
ITM = π x IT(AV), TJ = 25 °C, 180° conduction
1.57
1.55
1.54
V
Maximum holding current
Maximum latching current
IH
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C
200
IL
Anode supply = 6 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 °C
400
mA
SWITCHING
PARAMETER
SYMBOL
Typical delay time
tgd
Typical rise time
tgr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω
VALUES
UNITS
1
2
μs
50 to 200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
50
mA
50 Hz, circuit to base,
all terminals shorted, t = 1 s
3500
V
TJ = TJ maximum,
exponential to 67 % rated VDRM
1000
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C
RMS insulation voltage
VINS
Critical rate of rise of
off-state voltage
dV/dt
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For technical questions, contact: [email protected]
Document Number: 94513
Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
TEST CONDITIONS
VALUES
PGM
tp ≤ 5 ms, TJ = TJ maximum
12
PG(AV)
f = 50 Hz, TJ = TJ maximum
3
IGM
Maximum peak negative
gate voltage
- VGT
VGT
10
TJ = 25 °C
Maximum gate voltage
that will not trigger
VGD
Maximum gate current
that will not trigger
IGD
Maximum rate of rise of
turned-on current
dI/dt
V
2.5
TJ = TJ maximum
IGT
A
4
TJ = - 40 °C
Maximum required DC
gate current to trigger
W
3
tp ≤ 5 ms, TJ = TJ maximum
TJ = - 40 °C
Maximum required DC
gate voltage to trigger
UNITS
1.7
Anode supply = 6 V,
resistive load; Ra = 1 Ω
270
TJ = 25 °C
150
TJ = TJ maximum
80
mA
0.3
V
10
mA
300
A/μs
VALUES
UNITS
TJ = TJ maximum, rated VDRM applied
TJ = TJ maximum, ITM = 400 A rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage
temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface, smooth, flat and greased
°C
0.16
K/W
IAP to heatsink
Mounting
torque ± 10 %
0.18
0.05
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
busbar to IAP
Approximate weight
4 to 6
Case style
Nm
200
g
7.1
oz.
New INT-A-PAK
ΔR CONDUCTION PER JUNCTION
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
180°
120°
90°
60°
30°
180°
120°
90°
60°
UNITS
30°
VSK.136
0.007
0.01
0.013
0.0155
0.017
0.009
0.012
0.014
0.015
0.017
VSK.142
0.0019
0.0019
0.0020
0.0020
0.0021
0.0018
0.0022
0.0023
0.0023
0.0020
VSK.162
0.0030
0.0031
0.0032
0.0033
0.0034
0.0029
0.0036
0.0039
0.0041
0.0040
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94513
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
3
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Vishay High Power Products
350
VSK.136.. Series
RthJC (DC) = 0.18 K/W
120
110
Conduction Angle
100
90
30°
60°
90°
80
120°
180°
70
0
20
40
60
80
100
120
140
M axim um Averag e O n-state Pow er Loss (W )
Maximum Allowable Case Temperature (°C)
130
DC
180
120
90
60
30
300
250
200
150
100
C o n d uc tio n P eriod
VSK .136.. Se ries
Per Junction
TJ = 12 5°C
50
0
0
50
Average Forward Current (A)
Conduction Period
100
30°
60°
90°
80
120°
180°
DC
70
0
50
100
150
200
Pea k H alf Sin e W a ve O n -sta te C urren t (A )
Maximum Allowable Case Temperature (°C)
110
90
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
RMS Limit
Conduction Angle
VSK.136.. Series
Per Junction
TJ = 125°C
50
0
0
30
60
90
120
150
10
100
Fig. 5 - Maximum Non-Repetitive Surge Current
35 0 0
Maxim um No n Repetitive Surge Curre nt
V ers us Pulse Train D uratio n. C ontrol
O f Co nductio n M ay Not Be M aintained.
In itial TJ = 125°C
No V oltag e Re ap plie d
Ra te d V
Re ap plie d
30 0 0
RRM
25 0 0
20 0 0
15 0 0
VSK.1 36.. Se ries
Pe r Ju nction
10 0 0
0 .0 1
0.1
1
Pulse Tra in D ura tion (s)
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
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VSK.136.. Series
Per Junction
14 0 0
1
Peak Ha lf Sine W a ve O n -sta te C urrent (A)
Maximum Average On-state Power Loss (W)
180
120
90
60
30
100
In itial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
26 0 0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
300
150
2 50
12 0 0
250
Fig. 2 - Current Ratings Characteristics
200
2 00
A t A ny R ate d Lo ad Co nditio n A n d W ith
R ated VRRM A pplied Follo w ing Surge .
28 0 0
Average On-state Current (A)
250
1 50
Fig. 4 - On-State Power Loss Characteristics
30 0 0
VSK.136.. Series
RthJC (DC) = 0.18 K/W
120
1 00
A vera ge O n -sta te C urrent (A)
Fig. 1 - Current Ratings Characteristics
130
RM S Lim it
Fig. 6 - Maximum Non-Repetitive Surge Current
For technical questions, contact: [email protected]
Document Number: 94513
Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
/W
.01
= 0
4K
SA
0 .0
W
W
K/
W
W
- Δ
0 .4
K/ W
0 .6
R
200
K/
K/
K/
C onductio n Angle
250
25
08
300
0.
16
W
350
K/
0.
180
120
90
60
30
12
400
R th
0.
0.
M axim um Tota l O n -sta te Pow e r Loss (W )
450
K/ W
150
1 K/
W
100
VSK.136.. Se rie s
Pe r M odule
TJ = 12 5°C
50
0
0
50
100
150
200
250
300
0
Tota l R M S Outp ut C urre nt (A)
25
50
75
1 00
125
M axim um A llowab le Am bient Tem pera ture (°C)
Fig. 7 - On-State Power Loss Characteristics
A
hS
Rt
90 0
0.
04
0 .2
W
W
ΔR
50 0
K/
K/
-
60 0
08
/W
1K
180
(Sine )
180
(Re ct)
12
0.0
0.
W
0.
70 0
=
80 0
K/
M axim um To ta l P o we r Lo ss (W )
1 0 00
K/
W
40 0
0 .3 5
30 0
2 x VSK.136.. Series
Single P hase Brid ge
C onnected
T J = 125°C
20 0
10 0
K/ W
0. 6 K
/W
0
0
55
11 0
165
220
2 07 5
Total O utp ut C urre nt (A)
25
50
75
100
125
M axim um Allowab le Am bient Te m p era ture (°C )
Fig. 8 - On-State Power Loss Characteristics
Rt
A
hS
12 0 0
=
0.
04
W
Δ
R
3 x VSK.1 3 6.. Serie s
Th ree Ph a se B rid g e
C o n n ec te d
TJ = 1 2 5°C
K/
-
0 .1
60 0
30 0
08
0.1
W
0.
120
(Rec t)
90 0
K/
M a xim u m To ta l Po w e r Lo ss (W )
15 0 0
K/
W
6K
/
W
0 . 25
K/ W
0 .4 K
/W
1 K/ W
0
0
10 0
20 0
3 00
To ta l O u tp u t C u rre nt (A)
4 000
25
50
75
1 00
1 25
M axim u m A llo w a b le A m b ien t Tem p e ra tu re (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94513
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
5
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Vishay High Power Products
35 0
VSK.142.. Series
R thJC (D C ) = 0.18 K/W
120
110
C o nd uctio n Angle
100
30
90
60
90
80
120
180
70
0
30
60
90
1 20
1 50
M axim um Averag e O n -state Pow er Loss (W )
M a xim um Allo w ab le C ase Tem peratur e (°C)
130
DC
180
120
90
60
30
30 0
25 0
20 0
R M S L im it
15 0
C o nd u c tio n Pe rio d
10 0
VSK .1 4 2 .. Se rie s
P er Ju n c tio n
TJ = 1 2 5°C
50
0
0
50
Fig. 10 - Current Ratings Characteristics
VSK.1 4 2 .. Se rie s
R thJC (D C ) = 0 .1 8 K /W
120
110
C o n d uc tio n P e rio d
100
30
60
90
90
120
80
180
DC
70
0
50
100
15 0
200
15 0
RMS Lim it
10 0
C o nd uc tio n Angle
VSK .142.. Series
Per Junction
TJ = 12 5°C
0
60
90
1 20
1 50
Averag e O n-state C urren t (A )
Fig. 12 - On-State Power Loss Characteristics
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A t A ny Rated Lo ad Co nditio n A n d W ith
R ated V RRM A pplied Follo w ing Surge .
In itial TJJ= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
VSK.142.. Series
Per Junction
10
100
Fig. 14 - Maximum Non-Repetitive Surge Current
Pea k H alf Sin e W ave O n -sta te C urren t (A)
M axim um A ve ra ge O n -sta te Po w er Lo ss (W )
180
120
90
60
30
30
45 0 0
1
25 0
0
2 50
N um b er O f Eq ua l A m p litud e H a lf Cy cle C urrent P ulses (N )
Fig. 11 - Current Ratings Characteristics
50
2 00
15 0 0
25 0
Averag e O n-state C urrent (A)
20 0
1 50
Fig. 13 - On-State Power Loss Characteristics
Peak H a lf Sin e W a ve O n -stat e C urren t (A)
M axim um Allow a ble C ase Tem perature (°C)
130
1 00
Averag e O n-state C urren t (A )
A vera ge Forw a rd C urrent (A)
5 00 0
M axim um Non Repetitive Surge Current
V e rsus Pulse Train D uratio n. C o ntro l
O f Co nductio n Ma y No t Be M aintained .
4 50 0
In itial TJJ= 125°C
N o V oltag e Re a pp lied
Ra te d VR R M Re a pp lie d
4 00 0
3 50 0
3 00 0
2 50 0
2 00 0
VSK.1 42.. Se rie s
Pe r Ju nction
1 50 0
0 .0 1
0 .1
1
Pu lse Tra in D uration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
For technical questions, contact: [email protected]
Document Number: 94513
Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
SA
W
/W
=0
4K
R th
0.0
K/
.0 1
K/
W
K/ W
R
- Δ
0 .6
K/
08
200
25
0.
0 .4
W
0.
W
K/
180
120
90
60
30
300
K/
16
12
0.
0.
M axim um Total O n-state Pow e r Lo ss (W )
400
W
K/ W
C o nductio n A n g le
100
1K
/W
VSK.142.. Se rie s
Per M odule
TJ = 125°C
0
0
50
100
150
200
250
Tota l R M S O utp ut C urre nt (A)
30 0
25
50
75
10 0
12 5
M axim um A llowa ble A m b ient Tem perature (°C)
Fig. 16 - On-State Power Loss Characteristics
1 00 0
R th
-
0 .2
100
2 00
To ta l O u tp ut C u rre nt (A )
ΔR
0
/W
1K
0
W
2K
/W
0.1
6K
/W
2 x VSK .1 4 2.. Se ries
Sin g le P h a se Brid g e
C o n n ec te d
T J = 12 5°C
20 0
K/
.0
=0
40 0
W
180
(Sine )
180
(Re ct)
60 0
K/
0 .1
08
SA
04
M a xim um Tota l P o w er Lo ss (W )
0.
0.
80 0
5K
/W
0 .6 K
/W
0
3 00
25
50
75
10 0
12 5
M axim um A llowa ble A m b ient Tem perature (°C)
Fig. 17 - On-State Power Loss Characteristics
S
R th
0.
04
A
06
W
ΔR
0.1
K/
W
0.0
8 00
/
2K
0.
120
(Rec t)
0.0
W
12 0 0
=
K/
Ma xim u m Total Power Lo ss (W )
16 0 0
8K
/W
K/
W
3 x VSK.142.. Series
Three P hase Brid ge 0 .1 6 K/
W
C o nnected
0.2 K/ W
TJ = 125°C
4 00
0
0
5 0 10 0 1 5 0 20 0 25 0 30 0 35 0 4 0 0 450 0
Total O utp ut C urre nt (A)
25
50
75
10 0
12 5
M axim um A llowab le Am bie nt Tem perature (°C)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94513
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
7
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Vishay High Power Products
40 0
VSK.162.. Series
R thJ C (D C ) = 0.16 K/W
120
110
C o nd uc tio n Angle
100
90
30
60
90
80
120
180
70
0
30
60
90
1 20
150
180
M a xim um A vera g e O n -sta te Pow e r Lo ss (W )
M a xim um A llow ab le C a se Tem p era ture (°C)
130
DC
180
120
90
60
30
35 0
30 0
25 0
20 0
RM S Lim it
15 0
C o n du c tio n Pe rio d
10 0
VSK.162.. Series
Per Junctio n
TJ = 125°C
50
0
0
30
Averag e Fo rw ard C urrent (A)
Fig. 19 - Current Ratings Characteristics
4 50 0
VSK .162.. Series
R thJC (DC ) = 0.16 K/W
1 20
1 10
1 00
C on d uctio n P e rio d
30
90
60
80
90
120
70
180
DC
60
0
50
100
15 0
20 0
2 50
300
In itial TJ = 125°C
4 00 0
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3 50 0
3 00 0
2 50 0
2 00 0
VSK.162.. Series
Per Jun ction
1 50 0
1
Fig. 20 - Current Ratings Characteristics
10
3 00
180
120
90
60
30
2 50
2 00
RM S Lim it
1 50
1 00
50
C o nd uc tio n Angle
0
0
20
40
60
8 0 10 0 1 20 1 40 1 6 0 1 8 0
Averag e O n-state C urren t (A)
Fig. 21 - On-State Power Loss Characteristics
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Peak Ha lf Sine W av e O n -sta te C urrent (A)
50 0 0
VSK .162.. Se ries
Per Junction
TJ = 125°C
10 0
Fig. 23 - Maximum Non-Repetitive Surge Current
4 00
M axim um Averag e O n-state Pow er Loss (W )
A t A ny R ate d Lo ad C on dition A n d W ith
Rate d VRRM A pplie d Fo llow ing Surg e.
Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N)
A vera ge O n -sta te C urrent (A)
3 50
9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0
Fig. 22 - On-State Power Loss Characteristics
Pea k H alf Sin e W a ve O n-state C urren t (A )
M axim um Allow a b le C ase Tem perature (°C)
1 30
60
Averag e O n -sta te C urren t (A )
M axim um Non Repetitive Surge Current
V e rsus Pulse Tra in D uratio n. C o ntro l
O f Co nductio n Ma y No t Be M aintained .
In itia l TJ = 125°C
No V olta ge Re ap plied
Ra te d VR R M Re ap plie d
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
VSK .162.. Series
Per Junction
15 0 0
0.0 1
0 .1
1
Pu lse Tra in D uration (s)
Fig. 24 - Maximum Non-Repetitive Surge Current
For technical questions, contact: [email protected]
Document Number: 94513
Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
0. 0
W
=
K/
A
hS
K/
Rt
W
2
K/
W
ΔR
C onductio n An gle
W
K/
0 .1
200
08
W
0.1
300
04
0.
K/
400
06
180
120
90
60
30
500
0.
0.
M a xim um T ota l O n-state Pow e r Loss (W )
600
6K
/W
0.2
K/ W
VSK.162.. Se rie s
Pe r M odule
TJ = 125°C
100
0
0
100
200
400
0
300
Tota l RM S O utp ut C urre nt (A)
25
50
75
100
125
M axim um A llowab le Am b ie nt Tem p era ture (°C)
Fig. 25 - On-State Power Loss Characteristics
0.
8 00
W
0.3
3 00
0 .4
K/
ΔR
0.2
-
4 00
W
K/
5 00
W
04
180
(Sine )
180
(Re ct)
K/
0.
6 00
12
K/
=
0.
A
hS
7 00
08
Rt
M axim um Total P ower Lo ss (W )
9 00
W
K/ W
K/ W
2 x VSK.162.. Series 0 .6
K/ W
Single Phase Brid ge
1 K/ W
C onnected
TJ = 125°C
2 00
1 00
0
0
50
100
15 0
20 0
25 0
Tota l O utput C urrent (A)
0
3 00
25
50
75
10 0
12 5
M axim um A llo wa ble A m b ient Tem perature (°C)
Fig. 26 - On-State Power Loss Characteristics
04
A
K/
1 2 50
S
R th
0.
W
W
K/
K/
ΔR
0 .1
0 .2
5 00
2
120
(Rect)
7 50
08
0. 0
0.
1 0 00
=
W
M axim u m To tal Po wer Loss (W )
1 5 00
2 K
/W
K/ W
3 x VSK.162.. Series 0 .3 K
/W
Three Phase Brid ge
0. 6 K / W
C onnected
TJ = 12 5°C
2 50
0
0
50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 4050
Tota l Output C urrent (A)
25
50
75
100
125
M a xim um Allo w a b le A m b ie n t Te m p era tu re (°C)
Fig. 27 - On-State Power Loss Characteristics
Document Number: 94513
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
9
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
1
Transient Thermal Impedance Z thJC
Instantaneous On-state Current (A)
10000
1000
TJ = 25˚C
TJ = 125˚C
100
10
VSK.136.. Series
Per Junction
1
0
1
2
3
4
5
Steady State Value
(DC Operation)
0.1
0.01
VSK.136.. Series
0.001
0.001
Instantaneous On-state Voltage (V)
Fig. 28 - On-State Voltage Drop Characteristics
1
1000
Transient Thermal Impedance Z thJC
Instantaneous On-state Current (A)
10
Fig. 31 - Thermal Impedance ZthJC Characteristics
10000
TJ = 25˚C
T = 125˚C
J
100
10
VSK.142.. Series
Per Junction
1
0
1
2
3
4
Steady State Value
(DC Operation)
0.1
VSK.142.. Series
0.01
0.01
5
Instantaneous On-state Voltage (V)
0.1
1
Square Wave Pulse Duration (s)
Fig. 29 - On-State Voltage Drop Characteristics
Fig. 32 - Thermal Impedance ZthJC Characteristics
10
1
1000
TJ = 25˚C
TJ = 125˚C
100
10
VSK.162.. Series
Per Junction
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 30 - On-State Voltage Drop Characteristics
www.vishay.com
10
Transient Thermal Impedance Z thJC
10000
Instantaneous On-state Current (A)
0.01
0.1
1
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
0.1
VSK.162.. Series
0.01
0.01
0.1
1
Square Wave Pulse Duration (s)
10
Fig. 33 - Thermal Impedance ZthJC Characteristics
For technical questions, contact: [email protected]
Document Number: 94513
Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Vishay High Power Products
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
10
Rec ta ng ula r g a te p ulse
a )Re c o m m end e d lo a d line fo r
ra ted d I/d t: 20 V, 20 W
tr = 0.5 s, tp >= 6 s
b )Re c o m m end e d loa d line fo r
<= 30% ra ted d I/d t: 15 V , 40 W
tr = 1 s, tp >= 6 s
(1)
(2)
(3)
(4)
PG M
PG M
PG M
PG M
=
=
=
=
200 W , tp = 300 s
60 W , tp = 1 m s
30 W , tp = 2 m s
12 W , tp = 5 m s
(4)
(3 ) (2)
(a)
(b )
T J = -40 °C
T J = 12 5 °C
1
T J = 25 °C
In stan ta neous G a te V olta ge (V )
1 00
(1)
VG D
IG D
0 .1
0 .0 0 1
VSK.1 3 6 ..1 4 2 ..1 6 2 .. Se ries
0.0 1
0 .1
Frequen cy Lim ited by PG (AV )
1
10
100
1 00 0
Instan ta n eous G a te C urren t (A )
Fig. 34 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
T
162
1
2
3
/
16
PbF
4
5
1
-
Module type
2
-
Circuit configuration
3
-
Current rating: IT(AV)
4
-
Voltage code x 100 = VRRM
5
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
VSKT...
VSKH...
~
+
VSKL...
~
+
+
+
+
-
K1
+
-
-
-
-
K2
K2
G2
K1
G1
G1
~
G2
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 94513
Revision: 04-May-10
www.vishay.com/doc?95067
For technical questions, contact: [email protected]
www.vishay.com
11
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
29 (1.15)
28 (1.10)
9 (0.33)
30 (1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
23 (0.91)
7
6
4
5 (0.20)
5
23 (0.91)
1
3 screws M6 x 10
2
2.8 x 0.8
(0.11 x 0.03)
14.5 (0.57)
35 (1.38)
17 (0.67)
3
66 (2.60)
37 (1.44)
94 (3.70)
Document Number: 95067
Revision: 15-Feb-08
For technical questions, contact: [email protected]
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1