Bulletin I27600 rev. C 11/00 45MT160P THREE PHASE CONTROLLED BRIDGE Power Module 40 A Features High thermal conductivity package, electrically insulated case 4000 VRMS isolating voltage Major Ratings and Characteristics Parameters 45MT160P IO 40 (36) A 78 (85) °C @ 50Hz 390 A @ 60Hz 410 @ 50Hz 770 @ 60Hz 700 @ TC IFSM 2 I t Units 2 A2 s I √t 7700 A2√s VRRM 1600 V - 40 to 150 °C TSTG range TJ range Diode - 40 to 125 TJ range Scr - 40 to 100 1 45MT160P Bulletin I27600 rev. C 11/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage VRRM, maximum VRSM, maximum VDRM, max. repetitive IRRM/IDRM max. Code repetitive peak reverse voltage V non-repetitive peak reverse voltage V peak off-state voltage gate open circuit V @ TJ = TJ max. 1600 1700 1600 15 45MT160P 160 mA Forward Conduction Parameter IO ITSM 45MT160P Units Conditions Maximum DC output current 40 (36) A @ Case temperature 78 (85) °C Maximum peak, one-cycle 390 A forward, non-repetitive 410 t = 8.3ms reapplied on state surge current 330 t = 10ms 100% VRRM 345 I2t Maximum I2t for fusing 770 A2 s 120° Rect conduction angle t = 10ms No voltage t = 8.3ms reapplied Initial t = 10ms No voltage TJ = TJ max. 700 t = 8.3ms reapplied 540 t = 10ms 100% VRRM t = 8.3ms reapplied 500 I2√t Maximum I2√t for fusing 7700 A2√s VT(TO) Value of threshold voltage 0.98 V rt Low level value on-state 11 mΩ VTM Maximum on-state voltage drop 1.33 V di/dt Maximum non-repetitive rate of rise of turned on current 150 A/µs TJ = 25oC, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500mA, tr < 0.5 µs, tp > 6 µs IH Maximum Holding Current 200 mA TJ = 25oC, anode supply = 6V, IL Maximum Latching Current 400 t = 0.1 to 10ms, no voltage reapplied @ TJ max. Ipk = 30A, TJ = 25°C tp = 400µs single junction resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load Blocking Parameter VINS RMS isolation voltage 45MT160P Units Conditions 4000 V 1000 V/µs TJ = 25oC all terminal shorted f = 50Hz, t = 1s dv/dt Max. critical rate of rise of off-state voltage 2 TJ = TJ max., linear to 0.67 VDRM, gate open circuit 45MT160P Bulletin I27600 rev. C 11/00 Triggering Parameter PGM 45MT160P Max. peak gate power Units Conditions 10 W TJ = TJ max. PG(AV) Max. average gate power 2.5 IGM Max. peak gate current 2.5 A -VGT Max. peak negative gate voltage 10 V VGT Max. required DC gate 4.0 V voltage to trigger 2.5 TJ = 25°C 1.7 TJ = TJ max. IGT Max. required DC gate 270 current to trigger 150 Max. gate voltage Anode supply = 6V, resistive load TJ = - 40°C mA 80 VGD TJ = - 40°C TJ = 25°C Anode supply = 6V, resistive load TJ = TJ max. 0.25 V 6 mA @ TJ = TJ max., rated VDRM applied that will not trigger Max. gate current I GD that will not trigger Thermal and Mechanical Specifications TJ Tstg Parameter 45MT160P Units Conditions Maximum junction operating - 40 to 125 temperature range - 40 to 100 Maximum storage temperature -40 to 150 °C 0.32 K/W °C for diodes for Scr range R thJC Maximum thermal resistance, junction to case DC operation per junction 0.4 120° Rect condunction angle per module 2.42 R thCS Maximum thermal resistance, 120° Rect condunction angle per junction 0.1 K/W case to heatsink T Per module Mounting surface smooth, flat an greased Mounting torque ± 10% 4 Nm 60 g to heatsink wt DC operation per module 1.9 Approximate weight A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when device operate at different conduction angles than DC) Device 45MT160P Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max. 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o 0.469 0.55 0.69 1.005 1.87 0.289 0.521 0.72 1.065 1.891 Units K/W 3 45MT160P Bulletin I27600 rev. C 11/00 Ordering Information Table Device Code 4 5 1 2 MT 160 3 P 4 1 - Current rating code: 4 = 40 A (Avg) 2 - Circuit configuration code 3 - Essential part number 4 - Voltage code: Code x 10 = VRRM (See Voltage Ratings Table) Outline Table 1 5 2 3 7 4 8 All dimensions are in millimeters 4 45MT160P 130 1 00 0 R thJ C (D C ) = 0.32 K/W 120 110 120 (Rect) 100 TJ = 25 C Instan taneous O n-state C urrent (A) M axim um A llow ab le C a se Tem p e ra ture ( C ) Bulletin I27600 rev. C 11/00 90 80 70 T J = 12 5 C 10 0 10 1 60 0 10 20 30 40 0 50 2 Total O utput C urre n t (A ) 30 0 28 0 26 0 24 0 22 0 20 0 Per Jun ction 18 0 16 0 1 10 400 P ea k Ha lf Sine W a ve On -state C urren t (A) Initia l T J = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 32 0 6 8 10 12 Fig. 2 - On-state Voltage Drop Characteristics A t A ny Rated Lo ad C o nditio n A n d W ith Rate d V RRM A pplie d Fo llow ing Surg e . 34 0 M axim u m N o n R epe titive Su rg e C u rrent V ersus Pu lse Train D u ration . C o n tro l O f C o ndu ction M ay N ot Be M aintaine d. In itial TJ = 125 C N o V o ltage Re applie d Rate d V RRM Reapplie d 380 360 340 320 300 280 260 240 220 200 Pe r Ju nction 180 160 0.0 1 100 0.1 1 N um b er O f E q ua l A m p litud e H a lf C yc le C urre nt P ulses (N ) Pu lse Tra in D uration (s) Fig. 3 - Maximum Non-Repetitive Surge Current Fig. 4 - Maximum Non-Repetitive Surge Current 14 0 12 0 R th SA M axim um T otal Pow er Loss (W ) Pea k Ha lf Sine W ave On -sta te C urrent (A) Fig. 1 - Current Rating Characteristics 36 0 4 Instan tan eous O n -sta te V olta g e (V ) 10 0 1 120 (Rect) 80 1 .5 60 K/ = W K/ 0. 7 K/ W -D el ta R W 2K /W 3 K/ W 40 T J = 125 C 20 5 K /W 10 K /W 0 0 10 20 30 40 Tota l O utput C urren t (A ) 500 20 40 60 80 100 120 14 0 M a xim um A llow a ble A m b ien t Tem p era ture ( C ) Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink) 5 45MT160P T ra nsie n t Th e rm a l Im p e d an c e Z thJC (K/W ) Bulletin I27600 rev. C 11/00 10 Stea d y Sta te Va lue R thJC p er junctio n = 1.9 K/W D C O p eratio n ) 1 0 .1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0 Sq uare W a ve Pulse D ura tio n (s) Fig. 6 - Thermal Impedance Z thJC Characteristics 10 R e cta n g ula r ga t e p ulse a )R ec om m e n d ed lo a d lin e fo r ra te d d i/d t: 20 V , 30 oh m s tr = 0.5 s, tp >= 6 s b )R e co m m e nd ed loa d line for < = 30% ra ted d i/dt: 20 V , 65 o h m s tr = 1 s, t p >= 6 s (1) (2) (3) (4) PGM PGM PGM PGM 100 W , tp = 500 s 50 W , tp = 1 m s 20 W , tp = 25 m s 10 W , tp = 5 m s (a) TJ = -4 0 C TJ = 1 25 C 1 (4 ) (3) (2) (1) VGD IG D 0 .1 0 .0 0 1 0 .0 1 Fre qu e n c y Lim ite d b y PG (AV ) 0.1 1 10 In sta n ta n e ou s G at e C u rre n t (A ) Fig. 7 - Gate Characteristics 6 = = = = (b) T J = 25 C In sta nta ne ous G a te V olta g e (V ) 100 100 10 0 0 45MT160P Bulletin I27600 rev. C 11/00 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice 7