SQ4182EY www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 30 RDS(on) (Ω) at VGS = 10 V 0.0038 RDS(on) (Ω) at VGS = 4.5 V 0.0050 ID (A) • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 32 Configuration Single Package SO-8 D SO-8 Single D 8 D 7 D 6 D 5 G Top View 1 S 2 S 3 S 4 G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 32 18 IS 6.4 IDM 100 IAS 60 EAS 180 PD UNIT 7.1 2.3 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 80 RthJF 21 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). S15-2402--Rev. C, 12-Oct-15 Document Number: 67917 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4182EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b ID(on) RDS(on) gfs VGS = 0 V VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 20 - - VGS = 10 V ID = 14 A - 0.0031 0.0038 VGS = 10 V ID = 14 A, TJ = 125 °C - - 0.0060 VGS = 10 V ID = 14 A, TJ = 175 °C - - 0.0070 VGS = 4.5 V ID = 10 A - 0.0040 0.0050 - 107 - - 4313 5400 VDS = 15 V, ID = 14 A V nA μA A Ω S Dynamic b Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 868 1090 Reverse Transfer Capacitance Crss - 305 390 Total Gate Charge c Qg - 72 110 Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Qgs Fall Time c VDS = 15 V, ID = 20 A Qgd Rg f = 1 MHz td(on) tr Time c VGS = 10 V VDS = 15 V, f = 1 MHz td(off) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics pF - 14 - - 8 - nC 0.9 1.8 4.9 - 16 24 - 10 15 - 57 86 - 8 12 - - 100 A - 0.75 1.2 V Ω ns b Pulsed Current a ISM Forward Voltage VSD IF = 10 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2402--Rev. C, 12-Oct-15 Document Number: 67917 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4182EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 20 VGS = 10 V thru 4 V VGS = 3 V 16 ID - Drain Current (A) ID - Drain Current (A) 24 18 12 6 12 TC = 25°C 8 4 0 TC= 125°C TC = - 55°C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Transfer Characteristics Output Characteristics 2.0 150 TC = - 55 °C 120 gfs - Transconductance (S) ID - Drain Current (A) 1.6 1.2 TC = 25 °C 0.8 0.4 TC = 125 °C TC = - 55 °C 90 TC = 125 °C 60 30 0 0.0 0 TC = 25 °C 12 15 6 12 18 24 VDS - Drain-to-Source Voltage (V) 30 ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 3 Transconductance 0.010 6000 0.008 4800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 0.006 0.004 VGS = 4.5 V VGS = 10 V 0.002 6 9 ID - Drain Current (A) Ciss 3600 2400 Coss 1200 Crss 0.000 0 0 4 8 S15-2402--Rev. C, 12-Oct-15 12 16 20 0 Document Number: 67917 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4182EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 10 ID = 5 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 20 A 8 VDS = 15 V 6 4 2 20 40 60 80 100 VGS = 4.5 V 1.1 0.8 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.020 100 0.016 10 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 1.4 0.5 - 50 - 25 0 0 VGS = 10 V 1.7 1 0.1 TJ = 25 °C 0.01 0.012 0.008 TJ = 150 °C 0.004 TJ = 25 °C 0.000 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 38 VDS - Drain-to-Source Voltage (V) ID = 1 mA VGS(th) Variance (V) 0.2 - 0.2 ID = 5 mA - 0.6 ID = 250 μA - 1.0 - 1.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S15-2402--Rev. C, 12-Oct-15 125 150 175 36 34 32 30 28 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 67917 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4182EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 1 Limited by RDS(on)* 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 100 ms 1s 10 s, DC 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2402--Rev. C, 12-Oct-15 Document Number: 67917 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4182EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67917. S15-2402--Rev. C, 12-Oct-15 Document Number: 67917 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4182EY www.vishay.com REVISION HISTORY REVISION C a DATE 21-Sep-15 Vishay Siliconix DESCRIPTION OF CHANGE • Rg changed Note a. As of April 2014 S15-2402--Rev. C, 12-Oct-15 Document Number: 67917 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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