SQ4182EY Datasheet

SQ4182EY
www.vishay.com
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
30
RDS(on) (Ω) at VGS = 10 V
0.0038
RDS(on) (Ω) at VGS = 4.5 V
0.0050
ID (A)
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
32
Configuration
Single
Package
SO-8
D
SO-8 Single
D
8
D
7
D
6
D
5
G
Top View
1
S
2
S
3
S
4
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C a
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
32
18
IS
6.4
IDM
100
IAS
60
EAS
180
PD
UNIT
7.1
2.3
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
80
RthJF
21
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
S15-2402--Rev. C, 12-Oct-15
Document Number: 67917
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4182EY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
Zero Gate Voltage Drain Current
IDSS
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
On-State Drain
Current a
Drain-Source On-State Resistance a
Forward
Transconductance b
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
20
-
-
VGS = 10 V
ID = 14 A
-
0.0031
0.0038
VGS = 10 V
ID = 14 A, TJ = 125 °C
-
-
0.0060
VGS = 10 V
ID = 14 A, TJ = 175 °C
-
-
0.0070
VGS = 4.5 V
ID = 10 A
-
0.0040
0.0050
-
107
-
-
4313
5400
VDS = 15 V, ID = 14 A
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
VGS = 0 V
Output Capacitance
Coss
-
868
1090
Reverse Transfer Capacitance
Crss
-
305
390
Total Gate Charge c
Qg
-
72
110
Gate-Source
Charge c
Gate-Drain Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay
Qgs
Fall Time c
VDS = 15 V, ID = 20 A
Qgd
Rg
f = 1 MHz
td(on)
tr
Time c
VGS = 10 V
VDS = 15 V, f = 1 MHz
td(off)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Source-Drain Diode Ratings and Characteristics
pF
-
14
-
-
8
-
nC
0.9
1.8
4.9
-
16
24
-
10
15
-
57
86
-
8
12
-
-
100
A
-
0.75
1.2
V
Ω
ns
b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 10 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2402--Rev. C, 12-Oct-15
Document Number: 67917
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4182EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
20
VGS = 10 V thru 4 V
VGS = 3 V
16
ID - Drain Current (A)
ID - Drain Current (A)
24
18
12
6
12
TC = 25°C
8
4
0
TC= 125°C
TC = - 55°C
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
10
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Transfer Characteristics
Output Characteristics
2.0
150
TC = - 55 °C
120
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
TC = - 55 °C
90
TC = 125 °C
60
30
0
0.0
0
TC = 25 °C
12
15
6
12
18
24
VDS - Drain-to-Source Voltage (V)
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1
2
3
4
VGS - Gate-to-Source Voltage (V)
0
5
3
Transconductance
0.010
6000
0.008
4800
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Transfer Characteristics
0.006
0.004
VGS = 4.5 V
VGS = 10 V
0.002
6
9
ID - Drain Current (A)
Ciss
3600
2400
Coss
1200
Crss
0.000
0
0
4
8
S15-2402--Rev. C, 12-Oct-15
12
16
20
0
Document Number: 67917
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4182EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
10
ID = 5 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 20 A
8
VDS = 15 V
6
4
2
20
40
60
80
100
VGS = 4.5 V
1.1
0.8
0
25
50
75
100
125
150
175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.020
100
0.016
10
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
1.4
0.5
- 50 - 25
0
0
VGS = 10 V
1.7
1
0.1
TJ = 25 °C
0.01
0.012
0.008
TJ = 150 °C
0.004
TJ = 25 °C
0.000
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
38
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
VGS(th) Variance (V)
0.2
- 0.2
ID = 5 mA
- 0.6
ID = 250 μA
- 1.0
- 1.4
- 50 - 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S15-2402--Rev. C, 12-Oct-15
125
150
175
36
34
32
30
28
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 67917
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4182EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
10
1 ms
10 ms
1
Limited by RDS(on)*
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
100 ms
1s
10 s, DC
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2402--Rev. C, 12-Oct-15
Document Number: 67917
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4182EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67917.
S15-2402--Rev. C, 12-Oct-15
Document Number: 67917
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4182EY
www.vishay.com
REVISION HISTORY
REVISION
C
a
DATE
21-Sep-15
Vishay Siliconix
DESCRIPTION OF CHANGE
• Rg changed
Note
a. As of April 2014
S15-2402--Rev. C, 12-Oct-15
Document Number: 67917
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000