SQ1440EH www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 60 RDS(on) () at VGS = 10 V 0.120 RDS(on) () at VGS = 4.5 V 0.150 ID (A) • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1.7 Configuration Single Package SC-70 SOT-363 SC-70 Single (6 leads) D 6 D 5 D S 4 G 1 D Top View 2 D 3 G N-Channel MOSFET S Marking Code: 9G ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current a TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 1.7 1.7 IDM 6.7 IAS 10 PD V 1.7 IS EAS UNIT 5 3.3 1.1 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 125 RthJF 45 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-2675-Rev. B, 16-Nov-15 Document Number: 65884 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1440EH www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 VGS = 10 V VDS 5 V 10 - - VGS = 10 V ID = 3.8 A - 0.085 0.120 VGS = 10 V ID = 3.8 A, TJ = 125 °C - - 0.200 VGS = 10 V ID = 3.8 A, TJ = 175 °C - - 0.240 VGS = 4.5 V ID = 3.1 A - 0.095 0.150 - 6 - - 275 344 - 34 42 - 13 17 VDS = 15 V, ID = 1.8 A V nA μA A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = 15 V, f = 1 MHz - 4.4 5.5 - 0.7 - - 1.3 - f = 1 MHz 2.1 4.1 6.2 - 5.8 7.3 VDD = 30 V, RL = 3.9 ID 3.8 A, VGEN = 10 V, Rg = 1 - 23 29 - 10 13 - 30 39 VGS = 10 V VDS = 30 V, ID = 3.8 A td(on) tr td(off) tf pF nC ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 1.8 A, VGS = 0 V - - 11 A - 0.8 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2675-Rev. B, 16-Nov-15 Document Number: 65884 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1440EH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 15 VGS = 10 V thru 4 V 12 9 ID - Drain Current (A) ID - Drain Current (A) 12 VGS= 3 V 6 3 9 TC = 25 °C 6 TC = 125 °C 3 TC = - 55 °C VGS = 1 V VGS = 2 V 0 0 0 1 2 3 4 5 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics 10 Transfer Characteristics 80 15 VDS - Drain-to-Source Voltage (V) ID = 10 mA gfs - Transconductance (S) 12 TC = - 55 °C TC = 25 °C 9 6 TC = 125 °C 3 72 68 64 60 0 0 1 2 3 ID - Drain Current (A) 4 5 - 50 - 25 25 50 75 100 125 150 175 Drain Source Breakdown vs. Junction Temperature 0.25 400 0.20 RDS(on) - On-Resistance (Ω) 500 Ciss 300 0 TJ - Junction Temperature (°C) Transconductance C - Capacitance (pF) 76 200 100 0.15 VGS = 4.5 V 0.10 VGS = 10 V 0.05 Coss Crss 0 0 0.00 15 30 45 VDS - Drain-to-Source Voltage (V) Capacitance S15-2675-Rev. B, 16-Nov-15 60 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 65884 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1440EH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.5 ID = 3.8 A VDS = 30 V 8 0.4 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 10 6 4 2 0.3 TJ = 150 °C 0.2 0.1 TJ = 25 °C 0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 Qg - Total Gate Charge (nC) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Gate Charge On-Resistance vs. Gate-to-Source Voltage 10 0.5 IS - Source Current (A) 0.2 VGS(th) Variance (V) 10 ID = 5 mA - 0.1 - 0.4 ID = 250 μA TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 - 0.7 - 1.0 - 50 - 25 0.001 0 25 50 75 100 125 150 0.0 175 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Threshold Voltage Source Drain Diode Forward Voltage 1.2 2.5 2.5 ID = 3.4 A RDS(on) - On-Resistance (Normalized) RDS(on) - On-Resistance (Normalized) 0.2 TJ - Temperature (°C) 2.1 VGS = 10 V 1.7 1.3 VGS = 4.5 V 0.9 0.5 - 50 - 25 0 25 50 75 100 125 150 175 ID = 4.2 A 2.1 VGS = 10 V 1.7 1.3 VGS = 4.5 V 0.9 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature On-Resistance vs. Junction Temperature S15-2675-Rev. B, 16-Nov-15 175 Document Number: 65884 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1440EH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 100 μs 1 1 ms 10 ms 100 ms 0.1 BVDSS Limited 1 s, 10 s, DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 125 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2675-Rev. B, 16-Nov-15 Document Number: 65884 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1440EH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65884. S15-2675-Rev. B, 16-Nov-15 Document Number: 65884 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1440EH www.vishay.com REVISION HISTORY REVISION B a DATE 05-Nov-15 Vishay Siliconix DESCRIPTION OF CHANGE • Corrected marking code Note a. As of April 2014 S15-2675-Rev. B, 16-Nov-15 Document Number: 65884 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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