SQ1440EH Datasheet

SQ1440EH
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
60
RDS(on) () at VGS = 10 V
0.120
RDS(on) () at VGS = 4.5 V
0.150
ID (A)
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1.7
Configuration
Single
Package
SC-70
SOT-363
SC-70 Single (6 leads)
D
6
D
5
D
S
4
G
1
D
Top View
2
D
3
G
N-Channel MOSFET
S
Marking Code: 9G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current a
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
1.7
1.7
IDM
6.7
IAS
10
PD
V
1.7
IS
EAS
UNIT
5
3.3
1.1
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
125
RthJF
45
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S15-2675-Rev. B, 16-Nov-15
Document Number: 65884
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1440EH
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS = 0 V, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS  5 V
10
-
-
VGS = 10 V
ID = 3.8 A
-
0.085
0.120
VGS = 10 V
ID = 3.8 A, TJ = 125 °C
-
-
0.200
VGS = 10 V
ID = 3.8 A, TJ = 175 °C
-
-
0.240
VGS = 4.5 V
ID = 3.1 A
-
0.095
0.150
-
6
-
-
275
344
-
34
42
-
13
17
VDS = 15 V, ID = 1.8 A
V
nA
μA
A

S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay
Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
VGS = 0 V
VDS = 15 V, f = 1 MHz
-
4.4
5.5
-
0.7
-
-
1.3
-
f = 1 MHz
2.1
4.1
6.2
-
5.8
7.3
VDD = 30 V, RL = 3.9 
ID  3.8 A, VGEN = 10 V, Rg = 1 
-
23
29
-
10
13
-
30
39
VGS = 10 V
VDS = 30 V, ID = 3.8 A
td(on)
tr
td(off)
tf
pF
nC

ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 1.8 A, VGS = 0 V
-
-
11
A
-
0.8
1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S15-2675-Rev. B, 16-Nov-15
Document Number: 65884
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1440EH
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
15
VGS = 10 V thru 4 V
12
9
ID - Drain Current (A)
ID - Drain Current (A)
12
VGS= 3 V
6
3
9
TC = 25 °C
6
TC = 125 °C
3
TC = - 55 °C
VGS = 1 V
VGS = 2 V
0
0
0
1
2
3
4
5
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
Transfer Characteristics
80
15
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
gfs - Transconductance (S)
12
TC = - 55 °C
TC = 25 °C
9
6
TC = 125 °C
3
72
68
64
60
0
0
1
2
3
ID - Drain Current (A)
4
5
- 50 - 25
25
50
75
100
125
150
175
Drain Source Breakdown vs. Junction Temperature
0.25
400
0.20
RDS(on) - On-Resistance (Ω)
500
Ciss
300
0
TJ - Junction Temperature (°C)
Transconductance
C - Capacitance (pF)
76
200
100
0.15
VGS = 4.5 V
0.10
VGS = 10 V
0.05
Coss
Crss
0
0
0.00
15
30
45
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-2675-Rev. B, 16-Nov-15
60
0
3
6
9
12
15
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 65884
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1440EH
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.5
ID = 3.8 A
VDS = 30 V
8
0.4
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
10
6
4
2
0.3
TJ = 150 °C
0.2
0.1
TJ = 25 °C
0
0.0
0.0
1.0
2.0
3.0
4.0
5.0
Qg - Total Gate Charge (nC)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Gate-to-Source Voltage
10
0.5
IS - Source Current (A)
0.2
VGS(th) Variance (V)
10
ID = 5 mA
- 0.1
- 0.4
ID = 250 μA
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
- 0.7
- 1.0
- 50 - 25
0.001
0
25
50
75
100
125
150
0.0
175
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
Source Drain Diode Forward Voltage
1.2
2.5
2.5
ID = 3.4 A
RDS(on) - On-Resistance (Normalized)
RDS(on) - On-Resistance (Normalized)
0.2
TJ - Temperature (°C)
2.1
VGS = 10 V
1.7
1.3
VGS = 4.5 V
0.9
0.5
- 50 - 25
0
25
50
75
100
125
150
175
ID = 4.2 A
2.1
VGS = 10 V
1.7
1.3
VGS = 4.5 V
0.9
0.5
- 50 - 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Junction Temperature
S15-2675-Rev. B, 16-Nov-15
175
Document Number: 65884
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1440EH
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
100 μs
1
1 ms
10 ms
100 ms
0.1
BVDSS Limited
1 s, 10 s, DC
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2675-Rev. B, 16-Nov-15
Document Number: 65884
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1440EH
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65884.
S15-2675-Rev. B, 16-Nov-15
Document Number: 65884
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1440EH
www.vishay.com
REVISION HISTORY
REVISION
B
a
DATE
05-Nov-15
Vishay Siliconix
DESCRIPTION OF CHANGE
• Corrected marking code
Note
a. As of April 2014
S15-2675-Rev. B, 16-Nov-15
Document Number: 65884
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000