SHENZHENFREESCALE SQ4182EY

SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () at VGS = 10 V
0.0038
RDS(on) () at VGS = 4.5 V
0.0050
ID (A)
FEATURES
• TrenchFET® Power MOSFET
32
Configuration
Single
• AEC-Q101 Qualified
• 100 % Rg and UIS Tested
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
• Material categorization:
For definitions of compliance please see
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G
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and Halogen-free
SQ4182EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
30
V
32
18
IS
6.4
IDM
100
IAS
60
EAS
180
PD
UNIT
7.1
2.3
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
80
RthJF
21
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mountc
°C/W
Notes
a. Package limited
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
1 / 10
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS5 V
20
-
-
VGS = 10 V
ID = 14 A
-
0.0031
0.0038
VGS = 10 V
ID = 14 A, TJ = 125 °C
-
-
0.0060
VGS = 10 V
ID = 14 A, TJ = 175 °C
-
-
0.0070
VGS = 4.5 V
ID = 10 A
-
0.0040
0.0050
-
107
-
VDS = 15 V, ID = 14 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = 10 V
VDS = 15 V, f = 1 MHz
VDS = 15 V, ID = 20 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
-
4313
5400
-
868
1090
-
305
390
-
72
110
-
14
-
-
8
-
1.5
3.2
4.9
-
16
24
pF
nC

-
10
15
-
57
86
-
8
12
-
-
100
A
-
0.75
1.2
V
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 10 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2 / 10
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
30
VGS = 10 V thru 4 V
VGS = 3 V
16
ID - Drain Current (A)
ID - Drain Current (A)
24
18
12
12
TC = 25°C
8
4
6
TC= 125°C
TC = - 55°C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Transfer Characteristics
Output Characteristics
2.0
150
TC = - 55 °C
120
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
TC = 25 °C
90
TC = 125 °C
60
30
TC = - 55 °C
0
0.0
0
12
15
6
12
18
24
VDS - Drain-to-Source Voltage (V)
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1
2
3
4
VGS - Gate-to-Source Voltage (V)
0
5
3
Transconductance
0.010
6000
0.008
4800
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Transfer Characteristics
0.006
0.004
VGS = 4.5 V
VGS = 10 V
0.002
6
9
ID - Drain Current (A)
Ciss
3600
2400
Coss
1200
Crss
0.000
0
0
3 / 10
4
8
12
16
20
0
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
10
ID = 5 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 20 A
8
VDS = 15 V
6
4
2
20
40
60
80
100
VGS = 4.5 V
1.1
0.8
0
25
50
75
100
125
150
175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.020
10
0.016
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
1.4
0.5
- 50 - 25
0
0
VGS = 10 V
1.7
1
0.1
TJ = 25 °C
0.01
0.012
0.008
TJ = 150 °C
0.004
TJ = 25 °C
0.001
0.000
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
38
0.6
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
VGS(th) Variance (V)
0.2
- 0.2
ID = 5 mA
- 0.6
ID = 250 μA
- 1.0
- 1.4
- 50 - 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
4 / 10
125
150
175
36
34
32
30
28
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
10
1 ms
10 ms
1
Limited by RDS(on)*
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
100 ms
1s
10 s, DC
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 / 10
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on
ctual application parameters and opeting conditions.
6 / 10
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
B
e
All Leads
q
A1
L
0.004"
MILLIMETERS
DIM
Min
INCHES
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
7 / 10
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, ( www.freescale.net.cn
), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.
In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.
0.288
7.3
0.050
1.27
0.196
5.0
0.027
0.69
0.078
1.98
0.2
5.07
Figure 1. Single MOSFET SO-8 Pad
Pattern With Copper Spreading
8 / 10
0.288
7.3
0.050
1.27
0.088
2.25
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
Figure 2. Dual MOSFET SO-8 Pad Pattern
With Copper Spreading
The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
9 / 10
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SQ4182EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
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Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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