Si8489EDB Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MICRO FOOT Bump Side View G 1 D S 3 4 XXX 2 APPLICATIONS Backside View S • Load switches and charger switches 8 489 S • Small 1 mm x 1 mm max. outline area • Low 0.548 mm max. profile • Typical ESD protection 2500 V HBM • Battery management • For smart phones and tablet PCs G Device Marking: 8489 xxx = Date/Lot Traceability Code D P-Channel MOSFET Ordering Information: Si8489EDB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 TA = 70 °C TA = 25 °C - 4.3a ID - 3.6b - 2.8b TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C - 1.5a IS - 0.65b 1.8a 1.1a PD 0.78b Package Reflow Conditionsc W 0.5b TA = 70 °C Operating Junction and Storage Temperature Range A - 20 TA = 25 °C Maximum Power Dissipation V - 5.4a TA = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 VPR 260 IR/Convection 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. Document Number: 62752 S12-1763-Rev. A, 23-Jul-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol a, b Maximum Junction-to-Ambient t = 10 s Maximum Junction-to-Ambientc, d t = 10 s Typical RthJA Maximum 55 70 125 160 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 190 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) ID = - 250 µA VDS = VGS, ID = - 250 µA V - 15 mV/°C 2.4 - 0.5 - 1.2 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = 0 V, VGS = ± 12 V ±5 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 VDS - 5 V, VGS = - 4.5 V - 10 µA A VGS = - 10 V, ID = - 1.5 A 0.036 0.044 Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 1.5 A 0.045 0.054 VGS = - 2.5 V, ID = - 1 A 0.065 0.082 Transconductancea gfs VDS = - 10 V, ID = - 1.5 A 10 Forward V S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 765 VDS = - 10 V, VGS = 0 V, f = 1 MHz 115 VDS = - 10 V, VGS = - 10 V, ID = - 1.5 A 17.5 27 8.6 13 VDS = - 10 V, VGS = - 4.5 V, ID = - 1.5 A 1.5 td(off) VDD = - 10 V, RL = 10 ID - 1.5 A, VGEN = - 4.5 V, Rg = 1 14 27 50 20 40 50 100 tf 25 50 td(on) 6 15 tr td(off) nC 2.6 VGS = - 0.1 V, f = 1 MHz td(on) tr pF 125 VDD = - 10 V, RL = 10 ID - 1.5 A, VGEN = - 8 V, Rg = 1 tf For technical questions, contact: [email protected] 8 20 68 130 28 60 ns Document Number: 62752 S12-1763-Rev. A, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions IS TA = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 1.5 A - 20 IS = - 1.5 A, VGS = 0 V IF = - 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C - 0.8 - 1.2 V 25 50 ns 9 20 nC 15 ns 10 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 60 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 50 40 TJ = 25 °C 30 20 10 10-4 10-5 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 10-9 0 0 3 6 9 12 VGS - Gate-Source Voltage (V) 15 0 18 Gate Current vs. Gate-Source Voltage 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) 18 Gate Current vs. Gate-Source Voltage 20 20 VGS = 5 V thru 3 V 16 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 2.5 V 12 8 VGS = 2 V 12 TC = 25 °C 8 TC = 125 °C 4 4 TC = - 55 °C VGS = 1.5 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics Document Number: 62752 S12-1763-Rev. A, 23-Jul-12 3.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 3.0 Transfer Characteristics For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.20 1200 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1000 VGS = 2.5 V 0.15 0.10 VGS = 4.5 V 0.05 800 600 400 Coss 200 VGS = 10 V Crss 0.00 0 0 4 8 12 ID - Drain Current (A) 16 20 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 100 VDS = 5 V ID = 1.5 A 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 10 6 VDS = 10 V 4 VDS = 16 V TJ = 150 °C 10 TJ = 25 °C 1 2 0.1 0 0 4 8 12 16 Qg - Total Gate Charge (nC) 0.0 20 Gate Charge 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage 1.0 1.4 VGS = 10 V, ID = 1.5 A 1.3 0.9 1.2 VGS(th) (V) RDS(on) - On-Resistance (Normalized) 20 1.1 0.8 ID = 250 μA 0.7 1.0 0.6 0.9 VGS = 4.5, 2.5 V, ID = 1.5 A 0.8 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 On-Resistance vs. Junction Temperature www.vishay.com 4 150 0.5 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage For technical questions, contact: [email protected] Document Number: 62752 S12-1763-Rev. A, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 0.20 20 Power (W) RDS(on) - On-Resistance (Ω) ID = 1.5 A 0.15 TJ = 125 °C 0.10 15 10 TJ = 25 °C 0.05 5 0.00 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 0.001 5 On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 Note: When mounted on 1" x 1" FR4 with full copper. 1 ms 10 ms 0.1 100 ms 10 s, 1s DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 1.5 4 1.2 Power Dissipation (W) ID - Drain Current (A) Safe Operating Area, Junction-to-Ambient 3 2 1 0.9 0.6 0.3 0 0.0 0 25 50 75 100 TA - Ambient Temperature (°C) Current Derating* Document Number: 62752 S12-1763-Rev. A, 23-Jul-12 125 150 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 190 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 62752 S12-1763-Rev. A, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 x 2, 0.5 mm PITCH) 3 1 4 A1 A2 e 2 A 4 x Ø 0.24 to 0.26 Note 4 Solder Mask ~ Ø 0.25 Bump Note 2 Recommended Land S S D G e 8489 s XXX D 4xØb s Mark on Backside of Die e D Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter 0.30 mm to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. •is location of pin 1. Millimetersa Dim. Inches Min. Nom. Max. Min. Nom. Max. A 0.462 0.505 0.548 0.0181 0.0198 0.0215 A1 0.220 0.250 0.280 0.0086 0.0098 0.0110 A2 0.242 0.255 0.268 0.0095 0.0100 0.0105 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62752. Document Number: 62752 S12-1763-Rev. A, 23-Jul-12 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SI8489EDB-T2-E1