SiA466EDJ www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.0095 at VGS = 10 V 25 0.0111 at VGS = 6 V 25 0.0130 at VGS = 4.5 V 25 VDS (V) 20 Qg (TYP.) 6.3 nC S 4 05 2. m m m 3 G Bottom View 5m 2.0 Top View - Small footprint area • Typical ESD protection: 2500 V (HBM) • 100 % Rg Tested D 6 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S 1 • Thermally enhanced PowerPAK® SC-70 package - Low on-resistance PowerPAK® SC-70-6L Single D 5 • TrenchFET® power MOSFET 1 D 2 D D • For smart phones and mobile computing - DC/DC converters G - Power management - Load switches Marking Code: AW Ordering Information: SiA466EDJ-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 25 a ID 15.1 b, c 12.1 b, c TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation IDM TC = 25 °C TA = 25 °C 16 IS 2.9 b, c TC = 25 °C 19.2 12.3 PD W 3.5 b, c 2.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 50 TC = 70 °C TA = 25 °C V 25 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) a UNIT TJ, Tstg -55 to 150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL b, f Maximum Junction-to-Case (Drain) TYPICAL MAXIMUM t≤5s RthJA 28 36 Steady State RthJC 5.3 6.5 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S14-1065-Rev. A, 19-May-14 Document Number: 62955 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA466EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - - V 17 - - -4.7 - VDS = VGS, ID = 250 μA 1 - 2.5 VDS = 0 V, VGS = ± 20 V - - ± 30 Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a ID = 250 μA IGSS IDSS ID(on) RDS(on) gfs VDS = 0 V, VGS = ± 4.5 V - - ±1 VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10 VDS ≤ 5 V, VGS = 4.5 V 20 - - VGS = 10 V, ID = 9 A - 0.0079 0.0095 VGS = 6 V, ID = 5 A - 0.0095 0.0111 VGS = 4.5 V, ID = 5 A - 0.0104 0.0130 VDS = 10 V, ID = 15 A - 38 - - 620 - VDS = 1 V, VGS = 0 V, f = 1 MHz - 230 - - 135 - VDS = 10 V, VGS = 10 V, ID = 15 A - 13 20 mV/°C V μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time - 6.3 10 VDS = 10 V, VGS = 4.5 V, ID = 15 A - 1.6 - - 2.1 - f = 1 MHz 0.2 0.9 1.8 - 5 10 - 22 33 20 td(on) VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr td(off) - 12 tf - 6 12 td(on) - 15 23 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) tf pF nC Ω ns - 73 110 - 12 20 - 20 30 - - 16 - - 50 - 0.8 1.2 V - 22 33 ns - 10 15 nC - 11 - - 11 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta TC = 25 °C IS = 10 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Reverse Recovery Rise Time tb Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited A ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1065-Rev. A, 19-May-14 Document Number: 62955 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA466EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-1 0.010 TJ = 25 °C 10-2 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.008 0.006 0.004 10-4 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 0.002 10-8 10-9 0.000 0 6 12 18 24 0 5 10 15 20 25 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current 5 50 VGS = 10 V thru 4 V 4 40 ID - Drain Current (A) ID - Drain Current (A) TC = 25 °C VGS = 3 V 30 20 3 2 TC = 125 °C 1 10 TC = - 55 °C VGS = 2 V 0 0 0 0.5 1 1.5 0 2 VDS - Drain-to-Source Voltage (V) 1.2 1.8 2.4 3 VGS - Gate- to - Source Voltage (V) Output Characteristics Transfer Characteristics 0.015 850 0.013 680 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.6 VGS = 4.5 V 0.011 VGS = 6 V 0.009 VGS = 10 V Ciss 510 340 Coss Crss 170 0.007 0 0.005 0 10 20 30 40 50 0 5 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance S14-1065-Rev. A, 19-May-14 20 Document Number: 62955 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA466EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.65 10 VDS = 5 V VGS = 10 V/9 A; 6 V/5 A; 4.5 V/5 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 15 A 8 VDS = 10 V 6 4 VDS = 16 V 2 1.4 1.15 0.9 0.65 0 0 3 6 9 12 - 50 15 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.025 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID =9 A TJ = 150 °C 10 TJ = 25 °C 1 0.020 0.015 TJ = 125 °C TJ = 25 °C 0.010 0.005 0.1 0.000 0.0 0.3 0.6 0.9 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 1.75 ID = 250 μA 25 1.5 Power (W) VGS(th) (V) 20 1.25 15 10 1 5 0.75 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S14-1065-Rev. A, 19-May-14 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient Document Number: 62955 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA466EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 40 Limited by IDM Limited by RDS(on)* 100 μs 30 ID - Drain Current (A) ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 10s, 1 s 0.1 20 10 DC, TA = 25 °C BVDSS Limited 0.01 0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 Safe Operating Area, Junction-to-Ambient 75 100 125 150 Current Derating* 24 2.0 18 1.5 Power (W) Power (W) 50 TC - Case Temperature (°C) 12 6 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-1065-Rev. A, 19-May-14 Document Number: 62955 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA466EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 t1 t2 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62955. S14-1065-Rev. A, 19-May-14 Document Number: 62955 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000