Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 ■ Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 6 Unit: mm (0.425) 0.2±0.05 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 0.9±0.1 ■ Basic Part Number ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 50 V Gate-source voltage (Drain open) VGSO ±7 V Drain current ID 100 mA Peak drain current IDP 200 mA Total power dissipation PT 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) EIAJ: SC-88 Symbol Internal Connection Conditions Drain-source surrender voltage VDSS ID = 10 µA, VGS = 0 Drain-source cutoff current IDSS VDS = 50 V, VGS = 0 Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 Gate threshold voltage Vth ID = 1 µA, VDS = 3 V Drain-source ON resistance Forward transfer admittance RDS(on) Yfs 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) SMini6-G1 Package Marking Symbol: 7Y ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter 0 to 0.1 • 2SK3539 × 2 0.9+0.2 –0.1 10˚ 6 5 4 1 2 3 Min Typ Max Unit 1.0 µA 50 V ±5 µA 1.2 1.5 V ID = 10 mA, VGS = 2.5 V 8 15 Ω ID = 10 mA, VGS = 4.0 V 6 12 ID = 10 mA, VGS = 4.0 V VDS = 3 V, VGS = 0 V, f = 1 MHz 0.9 20 60 mS 12 pF Short-circuit forward transfer capacitance (Common-source) Ciss Short-circuit output capacitance (Common-source) Coss 7 pF Reverse transfer capacitance Crss 3 pF (Common-source) Turn-on time ton VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω 200 ns Turn-off time toff VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω 200 ns Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Publication date: December 2003 SJJ00263BED 1 XP04878 PT Ta ID VDS 70 80 40 Ta = 25°C 60 VGS = 2.0 V 50 1.9 V 40 1.8 V 30 1.7 V 20 1.6 V 0 0 Ta = −25°C 200 25°C 75°C 150 100 40 80 120 160 1.5 V 0 2 4 6 8 Yfs VGS 0.08 0.04 0 1.0 2.0 Gate-source voltage VGS (V) 0 3.0 1.0 2.0 3.0 Gate-source voltage VGS (V) VIN IO 10 VO = 5 V Ta = 25°C ID = 10 mA 50 Input voltage VIN (V) Drain-source ON resistance RDS(on) (Ω) VDS = 3 V f = 1 MHz Ta = 25°C 0.12 0 0 12 RDS(on) VGS 60 0.16 10 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Forward transfer admittance |Yfs | (mS) VDS = 3 V 50 10 0 2 ID VGS 250 Drain current ID (mA) 120 Drain current ID (mA) Total power dissipation PT (mW) 160 40 30 20 Ta = 75°C 10 25°C −25°C 0 1 0 2 4 6 Gate-source voltage VGS (V) SJJ00263BED 10 −1 1 10 Output current IO (mA) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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