Silicon MOSFETs (Small Signal) 2SK3938 Silicon N-channel MOSFET For switching circuits Unit: mm Features 0.33+0.05 –0.02 High-speed switching SSSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing Drain-source surrender voltage VDSS 30 V Gate-source surrender voltage VGSS ±12 V Drain current ID 100 mA Peak drain current IDP 200 mA Power dissipation PD 100 mW Channel temperature Tch 125 °C Storage temperature Tstg –55 to +125 °C 0.15 min. 5° 0.80±0.05 1.20±0.05 5° 0.15 max. Unit 0.52±0.03 Rating 0 to 0.01 Symbol 2 (0.40) (0.40) 0.15 min. 1 0.23+0.05 –0.02 1.20±0.05 0.80±0.05 3 Absolute Maximum Ratings Ta = 25°C Parameter 0.10+0.05 –0.02 1: Gate 2: Source 3: Drain SSSMini3-F1 Package Marking Symbol: 6U Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Drain-source surrender voltage VDSS ID = 10 µA, VGS = 0 Drain-source cutoff current IDSS VDS = 20 V, VGS = 0 1.0 µA Gate-source cutoff current IGSS VGS = ±10 10 V, VDS = 0 ±10 µA Gate threshold voltage VTH ID = 1.0 µA, A, VDS = 3 V 1.0 1.5 V ID = 10 mA, VGS = 2.5 V 7 12 ID = 10 mA, VGS = 4.0 V 5 8 Drain-source ON resistance RDS(on) Forward transfer admittance Yfs 30 Unit V 0.5 ID = 10 mA, VDS = 3 V, f = 1 kHz 20 Ω 55 mS 12 pF 10 pF 6 pF Short-circuit forward transfer capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss Reverse transfer capacitance (Common source) Crss Turn-on time * ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 350 ns * toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 350 ns Turn-off time VDS = 3 V, VGS = 0, f = 1 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. * : ton , toff measurement circuit VOUT 90% 290 Ω 10% VGS VOUT VGS = 0 V to 3 V 50 Ω 100 µF VDD = 3 V ton Publication date: December 2004 SJF00043AED 10% 90% toff of 1 2SK3938 2SK3938_ PD-Ta 2SK3938_ ID-VDS PD Ta 2SK3938_ ID-VGS ID VDS ID VGS 120 120 80 40 VGS = 2.8 V 80 2.6 V 2.4 V 40 VDS = 3 V Ta = −25°C 120 Drain current ID (mA) Drain current ID (A) Power dissipation PD (mW) Ta = 25°C 25°C 85°C 80 40 2.2 V 2.0 V 0 80 40 0 120 0 2 3 4 2SK3938_ Yfs -VGS 2SK3938_ Yfs -ID 2SK3938_ RDS(on)-VGS Yfs ID Ta = −25°C 120 25°C 85°C 80 40 1 2 3 Forward transfer admittance Yfs (mS) Forward transfer admittance Yfs (mS) 1 Gate-source voltage VGS (V) Gate-source voltage VGS (V) 2 0 Drain-source voltage VDS (V) VDS = 3 V 0 0 12 8 Ambient temperature Ta (°C) Yfs VGS 0 4 VGS = 3 V Ta = 25°C 120 80 40 0 0 20 40 60 80 Drain current ID (mA) SJF00043AED 5 RDS(on) VGS 20 Drain-source ON resistance RDS(on) (Ω) 0 100 ID = 10 mA 16 12 8 Ta = 85°C 4 0 25°C −25°C 0 4 8 Gate-source voltage VGS (V) 12 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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