Composite Transistors XN01871 (XN1871) Silicon n-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half 2 1 (0.65) 0.30+0.10 –0.05 ■ Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Drain-source voltage VDSX 30 V Gate-drain voltage (Source open) VGDO −30 V Drain curennt ID 20 mA Gate current IG 10 mA Total power dissipation PT 300 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1: Gate (FET1) 2: Gate (FET2) 3: Drain (FET2) EIAJ: SC-74A Parameter Symbol VDS = 10 V, VGS = 0 Gate-source cutoff current IGSS VGS = −30 V, VDS = 0 Gate-source cutoff voltage VGSC VDS = 10 V, ID = 10 µA Mutual conductance gm Mini5-G1 Package Internal Connection Conditions IDSS 4: Source 5: Drain (FET1) Marking Symbol: 5T ■ Electrical Characteristics Ta = 25°C ± 3°C Drain-source cutoff current 1.1+0.3 –0.1 10˚ • 2SK0198 (2SK198) × 2 Parameter 0.4±0.2 4 1.50+0.25 –0.05 3 2.8+0.2 –0.3 ■ Features 0.16+0.10 –0.06 5˚ For low-frequency amplification 3 4 5 FET2 FET1 2 1 Min Typ 0.5 − 0.1 VDS = 10 V, ID = 0.5 mA, f = 1 MHz 4 VDS = 10 V, VGS = 0, f = 1 kHz 4 Max Unit 12 mA −100 nA −1.5 V mS 12 Short-circuit forward transfer capacitance (Common source) Ciss VDS = 10 V, VGS = 0, f = 1 MHz 14 pF Reverse transfer capacitance (Common source) Crss VDS = 10 V, VGS = 0, f = 1 MHz 3.5 pF Noise voltage NV VDS = 30 V, ID = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 60 mV Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00034BED 1 XN01871 PT Ta ID VDS 500 ID VGS 9.6 8 VDS = 10 V 8.0 300 200 6 VGS = 0 V 4 − 0.1 V − 0.2 V Drain current ID (mA) 400 Drain current ID (mA) Total power dissipation PT (W) Ta = 25°C 6.4 4.8 Ta = 75°C 3.2 25°C 2 100 − 0.3 V –25°C 1.6 − 0.4 V 0 40 80 120 0 160 0 Ambient temperature Ta (°C) 2 4 Mutual conductance gm (mS) Mutual conductance gm (mS) 16 IDSS = 5.0 mA 8 2.0 mA 4 0 − 0.8 − 0.6 − 0.4 − 0.2 12 2.0 mA 8 4 2 4 6 8 NF f 12 VGS = 3 V f = 1 MHz Ta = 25°C VDS = 10 V ID = 5.2 mA Ta = 25°C 10 Noise figure NF (dB) 4 3 2 1 8 6 4 Rg = 500 Ω 2 1 kΩ 1 10 Drain-source voltage VDS (V) 2 100 0 10 102 103 104 Frequency f (Hz) SJJ00034BED − 0.4 − 0.2 0 10 VGS = 3 V f = 1 MHz Ta = 25°C 8 6 Ciss 4 Coss 2 0 1 10 Drain-source voltage VDS (V) Drain current ID (mA) Crss VDS − 0.6 Ciss , Coss VDS IDSS = 5.0 mA 0 − 0.8 Gate-source voltage VGS (V) 16 0 0 5 0 0 −1.0 12 VDS = 10 V Ta = 25°C Gate-source voltage VGS (V) Reverse transfer capacitance C (pF) rss (Common source) 10 gm ID 20 VDS = 10 V Ta = 25°C 12 8 Drain-source voltage VDS (V) gm VGS 20 6 Short-circuit forward transfer capacitance (Common source) Ciss , Short-circuit output capacitance (Common source) Coss (pF) 0 105 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP