Schottky Barrier Diodes (SBD) MA2SD10 Silicon epitaxial planar type 0.30 ± 0.05 2 0.60 Reverse voltage (DC) Symbol Rating Unit VR 20 V Repetitive peak reverse voltage VRRM 20 V Non-repetitive peak forward surge current* IFSM 1 A IFM 300 mA IF(AV) 200 mA Peak forward current Average forward current Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) + 0.05 0.12 − 0.02 + 0.05 0.60 0.01 ± 0.01 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 0.60 − 0.03 Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting 0.80 − 0.03 + 0.05 ■ Features • • • • Unit : mm 0.80 ± 0.05 0.80 For super-high speed switching circuit + 0.05 1.20 − 0.03 1.60 ± 0.05 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 2L Internal Connection 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 10 V 20 µA Forward voltage (DC) VF1 IF = 5 mA 0.27 V VF2 IF = 200 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 0.47 40 V pF Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 1 MA2SD10 Schottky Barrier Diodes (SBD) IF V F 10−1 10−2 Reverse current IR (A) Forward current IF (A) Ta = 125°C 10−2 75°C 10−3 25°C − 20°C 10−4 0 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) 2 Ta = 125°C 10−3 75°C 10−4 10−5 10−5 10−6 IR V R 10−1 1 0.6 10−6 25°C 0 5 10 15 20 25 Reverse voltage VR (V) 30