Schottky Barrier Diodes (SBD) MA3X721D, MA3X721E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Two MA3X721s are contained in one package • Allowing to rectify under (IF(AV) = 200 mA) condition (for the single diode) 1.5 0.95 + 0.2 2.9 − 0.05 ■ Features 1.9 ± 0.2 0.65 ± 0.15 + 0.25 − 0.05 0.4 − 0.05 For super-high speed switching circuit For small current rectification 2 V VRRM 30 V IFM 300 mA Peak forward current Single Average forward current Single Double*1 220 200 IF(AV) Double*1 Single Non-repetitive peak forward surge current*2 Double*1 0.1 to 0.3 0.4 ± 0.2 JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) mA 130 A Marking Symbol • MA3X721D : M3H • MA3X721E : M3F 150 °C Internal Connection −55 to +150 °C IFSM 1 Junction temperature Tj Storage temperature Tstg 0.7 MA3X721D MA3X721E 1 Cathode Anode 2 Cathode Anode 3 Anode Cathode 1 1 Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 3 3 2 2 D ■ Electrical Characteristics Ta = 25°C Parameter 0 to 0.1 Repetitive peak reverse voltage + 0.1 Unit 30 0.16 − 0.06 Rating VR 0.8 Symbol + 0.2 Parameter Reverse voltage (DC) 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Conditions E Min Typ Max Unit 50 µA Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 200 mA Terminal capacitance Ct VR = 10 V, f = 1 MHz 30 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3 ns 0.55 V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3X721D, MA3X721E Schottky Barrier Diodes (SBD) IF V F IR VR VF Ta 103 105 0.5 100°C 25°C 1 10−1 IF = 200 mA 0.3 100 mA 0.2 0.1 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 0 120 160 20 16 12 8 10 V 5V 103 102 10 4 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 30 1 −40 10 25°C 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) VR = 30 V 104 24 100°C 102 10−1 200 IR T a Reverse current IR (µA) Terminal capacitance Ct (pF) 80 105 f = 1 MHz Ta = 25°C 28 40 Ambient temperature Ta (°C) Ct VR 32 103 1 1 mA 0 Reverse current IR (µA) Forward voltage VF (V) Forward current IF (mA) 0.4 − 20°C Ta = 150°C 10 10−2 Ta = 150°C 104 102 200 30