New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 21.7 nC S1 APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 Top View G2 D1 Ordering Information: Si4909DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C - 6.5 ID TA = 25 °C - 6.4a, b - 5.1a, b Avalanche Current Maximum Power Dissipation TC = 25 °C IS TA = 25 °C L = 0.1 mH - 1.6a, b IAS - 20 EAS 20 TC = 25 °C 3.2 TC = 70 °C 2.1 PD TA = 25 °C mJ 2.0a, b W 1.28a, b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 30e - 2.6 IDM Pulsed Drain Current Single-Pulse Avalanche Energy V - 8.0 TA = 70 °C Continuous Source-Drain Diode Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter a, c Maximum Junction-to-Ambient Maximum Junction-to-Foot Symbol Typical Maximum t 10 s RthJA 47 62.5 Steady State RthJF 29 38 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 °C/W. d. Based on TC = 25 °C. e. Limited by package. Document Number: 67077 S10-2603-Rev. A, 15-Nov-10 www.vishay.com 1 New Product Si4909DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient ID = - 250 µA VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 34 mV/°C 4.8 - 2.5 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 10 V, VGS = - 10 V - 1.2 - 20 µA A VGS = - 10 V, ID = - 8 A 0.021 0.027 VGS = - 4.5 V, ID = - 5 A 0.027 0.034 VDS = - 10 V, ID = - 8 A 22 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Rg 2000 VDS = - 20 V, VGS = 0 V, f = 1 MHz 240 VDS = - 20 V, VGS = - 10 V, ID = - 10 A 41.5 63 21.7 33 202 VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A 5.6 f = 1 MHz VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 1.5 6 12 10 20 9 18 50 90 tf 13 26 td(on) 42 75 40 70 40 70 18 35 td(off) tr td(off) nC 9.8 td(on) tr pF VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 4.5 V, Rg = 1 tf ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 2.6 - 30 IS = - 2 A, VGS = 0 V IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.75 - 1.2 V 41 80 ns 32 65 nC 15 26 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67077 S10-2603-Rev. A, 15-Nov-10 New Product Si4909DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 V GS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 V GS = 3 V 6 4 T C = 25 °C 8 2 T C = 125 °C T C = - 55 °C V GS = 2 V 0.5 1.0 1.5 2.0 0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.035 3100 0.031 2480 V GS = 4.5 V 0.027 0.023 V GS = 10 V 5 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 0.0 1860 1240 620 0.019 Coss Crss 0 0.015 0 8 16 24 32 0 40 16 24 32 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 40 1.8 ID = 8 A ID = 10 A 1.6 8 V GS = 10 V 6 V DS = 10 V V DS = 30 V 4 2 1.4 (Normalized) V DS = 20 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 8 V GS = 4.5 V 1.2 1.0 0.8 0 0 9 18 27 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67077 S10-2603-Rev. A, 15-Nov-10 36 45 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4909DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.15 100 ID = 8 A 0.12 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 150 °C 1 0.1 T J = 25 °C 0.09 0.06 T J = 125 °C 0.03 0.01 T J = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 10 50 40 ID = 250 μA ID = 5 mA 0.2 30 Power (W) VGS(th) Variance (V) 0.5 20 - 0.1 10 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on) * ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 1s 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 67077 S10-2603-Rev. A, 15-Nov-10 New Product Si4909DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.8 0.6 0.3 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67077 S10-2603-Rev. A, 15-Nov-10 www.vishay.com 5 New Product Si4909DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67077. www.vishay.com 6 Document Number: 67077 S10-2603-Rev. A, 15-Nov-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000