Si4620DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 7.4 0.052 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.2 nC SCHOTTKY PRODUCT SUMMARY APPLICATIONS VKA (V) VF (V) Diode Forward Voltage IF (A)a 30 0.470 at 3 A 3 • Load Switch for Portable Applications - Ideal for Boost Circuits • HDD Driver SO-8 K D A 1 8 K A 2 7 K S 3 6 D G 4 5 D G Top View S Ordering Information: Si4620DY-T1-E3 (Lead (Pb)-free) Si4620DY-T1-GE3 (Lead (Pb)-free and Halogen-free) A N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Symbol VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 IS IF Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) ID IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 30 30 ± 20 7.5 6 6 4.8 40 2.6 Unit V A 1.7a, b 3 8 3.1 2 2a, b 1.3a, b 3 1.9 1.8 1.1 - 55 to 150 260 W °C www.vishay.com 1 Si4620DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (MOSFET)a, c Maximum Junction-to-Foot (Drain) (MOSFET) RthJA 53 62.5 RthJF 30 40 Maximum Junction-to-Ambient (Schottky) RthJA 55 65 Maximum Junction-to-Foot (Drain) (Schottky) RthJF 32 42 Unit °C/W Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. c. Maximum under Steady State conditions for MOSFETS is 110 °C/W. d. Maximum under Steady State conditions for Schottky is 115 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 32.5 ID = 250 µA mV/°C - 5.3 VGS(th) VDS = VGS, ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ 5 V, VGS = 10 V 1.2 30 µA A VGS = 10 V, ID = 6 A 0.028 0.035 VGS = 4.5 V, ID = 4.9 A 0.041 0.052 VDS = 15 V, ID = 6 A 12 520 1040 VDS = 15 V, VGS = 0 V, f = 1 MHz 115 230 55 110 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 Rg VDS = 15 V, VGS = 10 V, ID = 6 A VDS = 15 V, VGS = 4.5 V, ID = 6 A td(off) tf 13 4.2 6.5 1.8 nC 1.5 f = 1 MHz td(on) tr 8.6 pF VDD = 15 V, RL = 3.1 Ω ID ≅ 4.8 A, VGEN = 4.5 V, Rg = 6 Ω Ω 2.8 16 30 36 54 21 40 17 40 ns Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 Si4620DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 2.6 40 IS = 1.7 A, VGS = 0 V IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 20 40 ns 14 30 nC 14 ns 6 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions Typ. Max. IF = 3 A Min. 0.39 0.470 IF = 3 A, TJ = 125 °C 0.35 0.420 Vr = 5 V 0.1 0.2 Vr = 5 V, TJ = 85 °C 3.5 17.5 Vr = 5 V, TJ = 106 °C 12 60 Vr = 30 V 0.22 0.5 Vr = 30 V, TJ = 85 °C 10 50 Vr = 30 V, TJ = 125 °C 40 200 Vr = 15 V 100 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 www.vishay.com 3 Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 40 VGS = 10 V thru 6 V 35 5V 8 I D - Drain Current (A) I D - Drain Current (A) 30 25 20 4V 15 6 4 TC = 125 °C 10 2 5 0 0.0 0 0 1 2 3 4 - 55 °C 25 °C 3V 5 0.5 1.0 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 800 600 C - Capacitance (pF) R D S(on) - On-Resistance (Ω) 700 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V Ciss 500 400 300 200 Coss 0.02 100 Crss 0.00 0 0 5 10 15 20 25 30 35 40 0 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 VGS = 10 V ID = 6 A ID = 6 A 8 1.4 R D S(on) - On-Resistance (Normalized) VG S - Gate-to-Source Voltage (V) 15 VDS = 15 V 6 VDS = 24 V 4 2 1.2 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 40 R DS(on) - On-Resistance (mΩ) I S - Source Current (A) ID = 6 A TJ = 150 °C 10 TJ = 25 °C 0.10 0.08 0.06 125 °C 25 °C 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 50 2.2 40 ID = 250 µA Power (W) VGS(th) (V) 2.0 1.8 30 20 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 TJ - Temperature (°C) 10-1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 0.1 DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 www.vishay.com 5 Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 4 Power Dissipation (W) I D - Drain Current (A) 8 6 4 3 2 1 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 www.vishay.com 7 Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 10 I F - Forward Current (A) I R - Reverse Current (mA) 100 10 I R = 30 V 1 I R = 10 V 0.1 0.01 TJ = 150 °C 1 TJ = 25 °C 0.1 0.001 0.0001 - 50 0.01 - 25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 VF - Forward Voltage Drop (V) TC - Junction Temperature (°C) Forward Voltage Drop Reverse Current vs. Junction Temperature C T - Junction Capacitance (pF) 300 240 180 120 60 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 Si4620DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 93 °C 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 10 1 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73862. Document Number: 73862 S09-1341-Rev. D, 13-Jul-09 www.vishay.com 9 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000