Si4401DDY Datasheet

Si4401DDY
Vishay Siliconix
P-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.015 at VGS = - 10 V
- 16.1
0.022 at VGS = - 4.5 V
- 13.3
VDS (V)
- 40
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
33 nC
APPLICATIONS
• Load Switch
• POL
SO-8
S
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
D
P-Channel MOSFET
Ordering Information: Si4401DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
- 12.9
ID
TA = 25 °C
- 10.2b, c
- 8.2b, c
Pulsed Drain Current
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
- 5.3
- 2.1b, c
IAS
- 28
EAS
6.3
TC = 70 °C
4
PD
TA = 25 °C
W
2.5b, c
1.6b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
mJ
39
TC = 25 °C
Maximum Power Dissipation
A
- 50
IS
TA = 25 °C
L = 0.1 mH
V
- 16.1
TC = 70 °C
TA = 70 °C
Continous Source-Drain Diode Current
Unit
TJ, Tstg
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
b, d
Maximum Junction-to-Ambient
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Symbol
Typical
Maximum
RthJA
37
50
RthJF
16
20
Unit
°C/W
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Si4401DDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
- 36
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
- 2.5
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = - 40 V, VGS = 0 V
-1
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
-5
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS - 5 V, VGS = - 10 V
5
- 1.2
- 25
µA
A
VGS - 10 V, ID = - 10.2 A
0.012
0.015
VGS - 4.5 V, ID = - 8.4 A
0.018
0.022
VDS = - 15 V, ID = - 10.2 A
37

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
3007
VDS = - 20 V, VGS = 0 V, f = 1 MHz
VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A
pF
64
95
33
50
9.8
VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A
VDD = - 20 V, RL = 2.4 
ID  - 8.2 A, VGEN = - 4.5 V, Rg = 1 
0.4
2
4
57
86
50
75
40
60
tf
17
26
td(on)
13
20
11
20
45
68
9
18
td(off)
tr
td(off)
nC
15.7
f = 1 MHz
td(on)
tr
335
291
VDD = - 20 V, RL = 2.4 
ID  - 8.2 A, VGEN = - 10 V, Rg = 1 
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 5.3
- 50
IS = - 8.2 A, VGS 0 V
IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
36
54
ns
41
62
nC
20
16
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Si4401DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
50
V GS = 10 V thru 5 V
V GS = 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
6
4
T C = 25 °C
2
10
T C = 125 °C
V GS = 3 V
0.5
1.0
1.5
0
2.0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
4500
0.024
3600
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
T C = - 55 °C
0
0
0.0
V GS = 4.5 V
0.018
V GS = 10 V
0.012
2700
1800
0.006
900
0
0
Coss
Crss
0
10
20
30
40
50
0
8
16
24
32
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
40
1.8
10
1.6
8
V GS = 10.2 V; I D = 10.2 A
V DS = 10 V
6
V DS = 20 V
V DS = 32 V
4
2
1.4
(Normalized)
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 10.2 A
1.2
V GS = 4.5 V; I D = 8.4 A
1.0
0.8
0
0
14
28
42
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
56
70
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4401DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 10.2 A
T J = 150 °C
10
T J = 25 °C
1
0.04
0.03
T J = 125 °C
0.02
T J = 25 °C
0.01
0
0.1
0
0.5
1.0
2
1.5
4
VSD - Source-to-Drain Voltage (V)
8
10
On-Resistance vs. Gate-to-Source Voltage
2.5
80
2.2
60
Power (W)
VGS(th) (V)
Source-Drain Diode Forward Voltage
1.9
ID = 250 μA
40
20
1.6
1.3
- 50
6
VGS - Gate-to-Source Voltage (V)
- 25
0
25
50
75
100
125
0
10 -2
150
10 -1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on) *
100 μs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Si4401DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18.0
ID - Drain Current (A)
13.5
9.0
4.5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
8
1.80
6
1.35
Power (W)
Power (W)
Current Derating*
4
0.90
0.45
2
0.00
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
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Si4401DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C /W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66801.
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Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000