SiA440DJ Datasheet

SiA440DJ
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () (Max.)
ID (A)a
0.026 at VGS = 10 V
12
0.028 at VGS = 4.5 V
12
0.029 at VGS = 3.7 V
12
0.035 at VGS = 2.5 V
12
Qg (Typ.)
6.9 nC
APPLICATIONS
• Portable Devices such as Tablet PCs
PowerPAK SC-70-6L-Single
and Mobile Computing
- DC/DC Converter
- Boost Converter
- Load Switch
- Power Management
- LED Backlighting
1
D
2
D
3
6
G
D
5
S
D
2.05 mm
S
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
S
N-Channel MOSFET
Marking Code
2.05 mm
D
4
AUX
Bottom View
Part # code
Ordering Information:
SiA440DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
XXX
Lot Traceability
and Date code
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
40
Gate-Source Voltage
VGS
± 12
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
Pulsed Drain Current (t = 100 µs)
Continuous Source-Drain Diode Current
Single Avalanche Current
TC = 25 °C
TA = 25 °C
L = 0.1 mH
Single Avalanche Energy
Maximum Power Dissipation
IS
8.6a,b, c
6.9b, c
50
2.9b, c
IAS
11
6
19
TC = 70 °C
12
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
A
12a
EAS
TA = 70 °C
Operating Junction and Storage Temperature Range
12a
TC = 25 °C
TA = 25 °C
V
12a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
3.5b, c
2.2b, c
- 55 to 150
260
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t5s
28
36
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Steady State
Maximum Junction-to-Case (Drain)
5.3
6.5
Notes:
a. Based on package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 64138
S13-1268-Rev. A, 27-May-13
For technical questions, contact:: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA440DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
V
39
ID = 250 µA
mV/°C
- 3.6
VGS(th)
VDS = VGS, ID = 250 µA
1.4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
a
gfs
Forward Transconductance
VDS 5 V, VGS = 10 V
0.6
10
µA
A
VGS = 10 V, ID = 9 A
0.021
0.026
VGS = 4.5 V, ID = 7 A
0.022
0.028
VGS = 3.7 V, ID = 7 A
0.023
0.029
VGS = 2.5 V, ID = 7 A
0.026
0.035
VDS = 10 V, ID = 9 A
45

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
700
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 9 A
14.3
21.5
6.9
10.5
VDS = 20 V, VGS = 4.5 V, ID = 9 A
1.4
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
2
7
15
5
10
40
3
10
td(on)
12
25
32
65
VDD = 20 V, RL = 2.9 
ID  7 A, VGEN = 4.5 V, Rg = 1 
tf
Fall Time
1
20
td(off)
Turn-Off Delay Time
VDD = 20 V, RL = 2.9 
ID  7 A, VGEN = 10 V, Rg = 1 
0.2
tf
tr
Rise Time
nC
2
f = 1 MHz
td(on)
Turn-On Delay Time
pF
87
40
23
45
5
10

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 µs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
12
50
IS = 7 A
IF = 7 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.85
1.2
V
15
30
ns
7.5
15
nC
9
6
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:: [email protected]
Document Number: 64138
S13-1268-Rev. A, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA440DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
20
VGS = 10 V thru 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
VGS = 3 V
12
8
TC = 25 °C
4
10
TC = 125 °C
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
0.0
2.0
0.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.5
2.0
Transfer Characteristics
0.060
1000
0.050
800
Ciss
VGS = 2.5 V
0.040
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.0
VGS - Gate-to-Source Voltage (V)
VGS = 3.7 V
0.030
0.020
600
400
VGS = 4.5 V
200
VGS = 10 V
0.010
Coss
Crss
0.000
0
0
10
20
30
40
50
0
8
16
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
32
40
Capacitance
1.8
RDS(on) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage (V)
24
VDS - Drain-to-Source Voltage (V)
ID = 9 A
8
VDS = 20 V
6
VDS = 32 V
VDS = 10 V
4
2
ID = 9 A
1.6
VGS = 10 V, 4.5 V, 3.7 V
1.4
VGS = 2.5 V
1.2
1.0
0.8
0.6
0
0
3
6
9
12
15
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64138
S13-1268-Rev. A, 27-May-13
For technical questions, contact:: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA440DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.060
100
ID = 9 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.050
10
TJ = 150 °C
TJ = 25 °C
1
0.040
TJ = 125 °C
0.030
0.020
TJ = 25 °C
0.010
0.000
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
1.4
1.3
25
1.2
20
Power (W)
VGS(th) (V)
1.1
1.0
ID = 250 μA
0.9
15
10
0.8
5
0.7
0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
Time (s)
10
100
1000
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
0.1
100 ms
1s
10 s
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact:: [email protected]
Document Number: 64138
S13-1268-Rev. A, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA440DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
ID - Drain Current (A)
20
15
Package Limited
10
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
Power Dissipation (W)
20
15
10
5
0
25
50
75
100
125
TC - Case Temperature (°C)
150
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64138
S13-1268-Rev. A, 27-May-13
For technical questions, contact:: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA440DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64138.
www.vishay.com
6
For technical questions, contact:: [email protected]
Document Number: 64138
S13-1268-Rev. A, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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11
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000