SiB410DK Datasheet

SiB410DK
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
• TrenchFET® Power MOSFET
a
RDS(on) ()
ID (A)
0.042 at VGS = 4.5 V
9
0.046 at VGS = 2.5 V
9
0.052 at VGS = 1.8 V
9
Qg (Typ.)
• 100 % Rg Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
5.7 nC
APPLICATIONS
PowerPAK SC-75-6L-Single
D
• DC/DC Converters
• Boost Converters
Marking Code
1
D
AHX
2
D
XXX
3
6
G
D
5
S
D
1.60 mm
S
G
Lot Traceability
and Date code
Part # code
1.60 mm
4
S
N-Channel MOSFET
Ordering Information:
SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
Limit
Drain-Source Voltage
Gate-Source Voltage
VGS
±8
TC = 70 °C
9a
ID
TA = 25 °C
5.9b, c
TA = 70 °C
4.7b, c
20
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
2.1b, c
13
TC = 25 °C
8.4
PD
TA = 25 °C
W
2.5b, c
1.6b, c
- 55 to 150
TA = 70 °C
Operating Junction and Storage Temperature Range
A
9a
IS
TA = 25 °C
TC = 70 °C
Maximum Power Dissipation
V
9a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
30
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
Maximum
t5s
41
51
Steady State
RthJC
7.5
9.5
Unit
°C/W
Notes:
a. Package limited, TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 67020
S13-0630-Rev. B, 25-Mar-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB410DK
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
31
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1
V
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
gfs
Forward Transconductancea
VDS 5 V, VGS = 10 V
- 2.7
0.4
10
µA
A
VGS 4.5 V, ID = 3.8 A
0.034
0.042
VGS 2.5 V, ID = 3.6 A
0.038
0.046
VGS 1.8 V, ID = 2 A
0.041
0.052
VDS = 15 V, ID = 3.8 A
30

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
560
VDS = 15 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
10
15
5.7
8.6
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
0.85
VDD = 15 V, RL = 4.3 
ID  3.5 A, VGEN = 4.5 V, Rg = 1 
3
6
6
12
10
20
20
40
10
20
5
10
10
20
VDD = 15 V, RL = 4.3 
ID  3.5 A, VGEN = 8 V, Rg = 1 
tf
Fall Time
0.6
td(on)
td(off)
Turn-Off Delay Time
nC
0.75
f = 1 MHz
tf
tr
Rise Time
pF
VDS = 15 V, VGS = 8 V, ID = 3.4 A
td(on)
Turn-On Delay Time
60
27
17
30
10
20

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
1.5
20
IS = 3.5 A, VGS 0 V
IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
15
30
ns
6
12
nC
8
7
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 67020
S13-0630-Rev. B, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB410DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
20
V GS = 5 V thru 2 V
8
V GS = 1.5 V
ID - Drain Current (A)
ID - Drain Current (A)
16
12
8
6
4
T C = 25 °C
2
4
V GS = 1 V
T C = 125 °C
V GS = 0.5 V
T C = - 55 °C
0
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
0.3
1.2
1.5
Transfer Characteristics
0.06
800
0.05
600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Output Characteristics
V GS = 1.8 V
V GS = 2.5 V
V GS = 4.5 V
0.03
0.9
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
0.04
0.6
Ciss
400
200
Coss
0.02
Crss
0
0
4
8
12
16
20
0
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.6
8
V GS = 4.5 V, V GS = 2.5 V
ID = 3.8 A
ID = 4.3 A
V DS = 7.5 V
V DS = 24 V
4
V DS = 15 V
(Normalized)
1.4
6
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
V GS = 1.8 V
1.2
1.0
2
0.8
0
0
2
4
6
8
10
0.6
- 50
- 25
Document Number: 67020
S13-0630-Rev. B, 25-Mar-13
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
0
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB410DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.10
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 3.8 A
T J = 150 °C
10
T J = 25 °C
1
0.08
0.06
T J = 125 °C
0.04
T J = 25 °C
0.02
0
0.1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
20
0.8
0.7
15
Power (W)
VGS(th) (V)
0.6
0.5
ID = 250 μA
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
10
1
100
1000
Pulse (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
100
Limited by R DS(on) *
ID - Drain Current (A)
10
100 μs
1
1 ms
10 ms
100 ms
1 s, 10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact: [email protected]
Document Number: 67020
S13-0630-Rev. B, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB410DK
Vishay Siliconix
15
15
12
12
Package Limited
Power (W)
ID - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
9
6
3
9
6
3
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67020
S13-0630-Rev. B, 25-Mar-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB410DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 105 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67020.
www.vishay.com
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For technical questions, contact: [email protected]
Document Number: 67020
S13-0630-Rev. B, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
b
e
PIN3
PIN2
PIN1
PIN3
PIN6
K3
PIN5
E1
E1
K
K
D1
D1
D1
E3
E1
D2
K
E2 K4
L
PIN2
L
PowerPAK® SC75-6L
PIN6
K2
PIN4
K1
K2
BACKSIDE VIEW OF SINGLE
PIN5
K1
PIN4
K2
BACKSIDE VIEW OF DUAL
D
A
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
C
A1
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.18
0.25
0.33
0.007
0.010
0.013
0.18
0.25
0.33
0.007
0.010
0.013
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
D1
0.57
0.67
0.77
0.022
0.026
0.030
0.34
0.44
0.54
0.013
0.017
0.021
D2
0.10
0.20
0.30
0.004
0.008
0.012
E
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
E1
1.00
1.10
1.20
0.039
0.043
0.047
0.51
0.61
0.71
0.020
0.024
0.028
E2
0.20
0.25
0.30
0.008
0.010
0.012
E3
0.32
0.37
0.42
0.013
0.015
0.017
e
0.50 BSC
0.020 BSC
0.50 BSC
0.020 BSC
K
0.180 TYP
0.007 TYP
0.245 TYP
0.010 TYP
K1
0.275 TYP
0.011 TYP
0.320 TYP
0.013 TYP
K2
0.200 TYP
0.008 TYP
0.200 BSC
0.008 TYP
K3
0.255 TYP
0.010 TYP
K4
0.300 TYP
L
0.15
0.25
0.012 TYP
0.35
T
0.006
0.010
0.014
0.15
0.25
0.35
0.006
0.010
0.014
0.03
0.08
0.13
0.001
0.003
0.005
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5935
Document Number: 73000
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single
1.250 (0.049)
0.250 (0.01)
0.500 (0.02)
0.250 (0.01)
0.400 (0.016)
0.300 (0.012)
0.180 (0.007)
0.370 (0.015)
1.700 (0.067)
1.100
0.620 (0.024)
(0.043)
2.000 (0.079)
0.200 (0.008)
0.300 (0.012)
0.300 (0.012)
1
0.545 (0.021)
0.250 (0.01)
0.670 (0.026)
2.000 (0.079)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70488
Revision: 21-Jan-08
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000