New Product SiA811ADJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile Qg 4.9 nC SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage 20 0.45 at 1 A RoHS COMPLIANT APPLICATIONS IF (A)a 2 • Cellular Charger Switch • Asynchronous DC/DC for Portable Devices • Load Switch for Portable Devices PowerPAK SC-70-6 Dual S K D A 1 A Marking Code 2 NC 3 D K 0.75 mm K Part # Code XXX D 6 Lot Traceability and Date Code G 5 2.05 mm S G HD X 2.05 mm 4 Ordering Information: SiA811ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Drain-Source Voltage (MOSFET) Limit Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ±8 TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C Maximum Power Dissipation (MOSFET) IFM Soldering Recommendations (Peak Temperature)d, e Document Number: 68955 S-82482-Rev. A, 13-Oct-08 - 3.2b, c - 2.6b, c -8 - 1.5b, c 2b 5 6.5 4.2 TA = 25 °C 1.8b, c PD 1.1b, c 6.8 TC = 70 °C 4.3 TA = 25 °C 1.6b, c TA = 70 °C 1.0b, c - 55 to 150 TJ, Tstg A - 4.5a TC = 70 °C TC = 25 °C Operating Junction and Storage Temperature Range - 4.5a TC = 25 °C TA = 70 °C Maximum Power Dissipation (Schottky) IS IF Average Forward Current (Schottky) Pulsed Forward Current (Schottky) V - 4.5a TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) Unit - 20 260 W °C www.vishay.com 1 New Product SiA811ADJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC RthJA RthJC t≤5s Steady State t≤5s Steady State Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, f Maximum Junction-to-Case (Drain) (Schottky) Typical 55 15 62 15 Maximum 70 19 76 18.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 19 mV/°C 2.4 - 0.4 -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 2.8 A -8 µA A 0.096 0.116 VGS = - 2.5 V, ID = - 2.3 A 0.126 0.155 VGS = - 1.8 V, ID = - 0.54 A 0.165 0.205 VDS = - 10 V, ID = - 2.8 A 7 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time www.vishay.com 2 345 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 8 V, ID = - 3.5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 3.5 A pF 8.4 13 4.9 7.4 0.75 VDD = - 10 V, RL = 2.85 Ω ID ≅ - 3.5 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 6 15 25 45 70 20 30 tf 10 15 td(on) 5 10 td(off) tr td(off) tf nC 1.2 f = 1 MHz td(on) tr 65 50 VDD = - 10 V, RL = 2.85 Ω ID ≅ - 3.5 A, VGEN = - 8 V, Rg = 1 Ω 10 15 20 30 10 15 ns Document Number: 68955 S-82482-Rev. A, 13-Oct-08 New Product SiA811ADJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 4.5 -8 IS = - 1.0 A, VGS = 0 V IF = - 4.5 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 30 60 ns 20 40 nC 15 ns 15 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions IF = 1 A Min. Typ. Max. 0.41 0.45 IF = 1 A, TJ = 125 °C 0.36 0.41 0.08 Vr = 5 V 0.015 Vr = 5 V, TJ = 85 °C 0.5 5.0 Vr = 20 V 0.02 0.10 Vr = 20 V, TJ = 85 °C 0.7 7 Vr = 20 V, TJ = 125 °C 5 50 Vr = 10 V 60 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68955 S-82482-Rev. A, 13-Oct-08 www.vishay.com 3 New Product SiA811ADJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.0 10 VGS = 5 thru 2.5 V VGS = 2 V 6 4 VGS = 1.5 V 1.5 I D - Drain Current (A) I D - Drain Current (A) 8 1.0 TC = 25 °C 0.5 2 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 700 0.30 600 0.25 VGS = 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TC = - 55 °C 0.0 0.0 0.20 VGS = 2.5 V 0.15 0.10 VGS = 4.5 V 500 Ciss 400 300 200 Coss 0.05 100 0.00 0 Crss 0 2 4 6 8 0 10 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.6 8 ID = 2.8 A ID = 3.5 A VDS = 10 V VDS = 5 V VDS = 15 V 4 2 (Normalized) 1.4 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.2 1.0 VGS = 4.5 V 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 10 0.6 - 50 VGS = 1.8 V - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68955 S-82482-Rev. A, 13-Oct-08 New Product SiA811ADJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.5 10 0.4 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.8 A TJ = 150 °C 1 TJ = 25 °C 0.3 0.2 TJ = 125 °C 0.1 TJ = 25 °C 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.4 0.3 15 0.2 Power (W) VGS(th) Variance (V) ID = 250 µA ID = 1 mA 0.1 10 0.0 5 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 * Limited by R DS(on) I D - Drain Current (A) 100 µs 1 1 ms 10 ms 100 ms 0.1 1 s, 10 s 100 s, DC BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 68955 S-82482-Rev. A, 13-Oct-08 www.vishay.com 5 New Product SiA811ADJ Vishay Siliconix 8 8 6 6 Package Limited Power (W) I D - Drain Current (A) MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 4 2 4 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68955 S-82482-Rev. A, 13-Oct-08 New Product SiA811ADJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W Single Pulse 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 68955 S-82482-Rev. A, 13-Oct-08 www.vishay.com 7 New Product SiA811ADJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 10 I F - Forward Current (A) I F - Reverse Current (mA) 10 1 20 V 0.1 5V 0.01 0.001 TJ = 150 °C 1 TJ = 25 °C 0.1 0.0001 0.00001 - 50 - 25 0 25 50 100 75 125 0.01 0.0 150 0.1 0.2 0.3 0.4 T J - Junction Temperature (°C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 0.5 CT - Junction Capacitance (pF) 300 240 180 120 60 0 0 4 8 12 16 20 VRS - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 68955 S-82482-Rev. A, 13-Oct-08 New Product SiA811ADJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68955. Document Number: 68955 S-82482-Rev. A, 13-Oct-08 www.vishay.com 9 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000