Si1013CX Datasheet

Si1013CX
www.vishay.com
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
PRODUCT SUMMARY
VDS (V)
-20
RDS(on) (Ω)
ID (A)
0.760 at VGS = -4.5 V
-0.45
1.040 at VGS = -2.5 V
-0.40
1.500 at VGS = -1.8 V
-0.32
Qg (TYP.) (nC)
• 100 % Rg tested
• Typical ESD protection: 1000 V (HBM)
• Fast switching speed
1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SC-89 (3 leads)
APPLICATIONS
D
3
S
• Load / power switch for portable
devices
• Drivers: relays, solenoids, displays
• Battery operated systems
2
S
G
1
G
Top View
D
P-Channel MOSFET
Marking Code: 6
Ordering Information:
Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TA = 25 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
UNIT
V
-0.45 b, c
ID
-0.36 b, c
IDM
-1.5
IS
-0.16 b, c
A
0.19 b, c
PD
W
0.12 b, c
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, b
SYMBOL
t≤5s
Steady State
RthJA
TYPICAL
MAXIMUM
440
530
540
650
UNIT
°C/W
Notes
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
S14-1601-Rev. B, 11-Aug-14
Document Number: 67995
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1013CX
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0, ID = -250 μA
-20
-
-
V
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
-
-12
-
-
1.8
-
VDS = VGS, ID = -250 μA
-0.4
-
-1
ID = -250 μA
VDS = 0 V, VGS = ± 8 V
-
-
± 30
VDS = 0 V, VGS = ± 4.5 V
-
-
±1
VDS = -20 V, VGS = 0 V
-
-
-1
Zero Gate Voltage Drain Current
IDSS
VDS = -20 V, VGS = 0 V, TJ = 85 °C
-
-
-10
On-State Drain Current a
ID(on)
VDS = ≥ 5 V, VGS = -4.5 V
-1.5
-
-
VGS = -4.5 V, ID = -0.4 A
-
0.630
0.760
RDS(on)
VGS = -2.5 V, ID = -0.2 A
-
0.865
1.040
VGS = -1.8 V, ID = -0.1 A
-
1.200
1.500
VDS = -10 V, ID = 0.4 A
-
1
-
-
45
-
-
15
-
-
10
-
-
1.65
2.50
-
1
2
VDS = -0 V, VGS = -2.5 V, ID = -0.4
-
0.2
-
-
0.26
-
f = 1 MHz
2.4
12
24
-
9
18
Drain-Source On-State Resistance a
Forward Transconductance
gfs
mV/°C
V
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDS = -10 V, VGS = -4.5 V, ID = -0.4 A
td(on)
tr
-
10
20
-
10
20
tf
-
8
16
td(on)
-
1
2
-
8
16
-
9
18
-
5
10
td(off)
tr
td(off)
VDD = -10 V, RL = 33.3 Ω
ID ≅ -0.3 A, VGEN = -4.5 V, Rg = 1 Ω
VDD = -10 V, RL = 33.3 Ω
ID ≅ -0.3 A, VGEN = -8 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current a
ISM
Body Diode Voltage
VSD
IS = -0.3 A
-
-
-1.5
A
-
-0.8
-1.2
V
Body Diode Reverse Recovery Time
trr
-
16
24
ns
Body Diode Reverse Recovery Charge
Qrr
-
8
16
nC
Reverse Recovery Fall Time
ta
-
11
-
Reverse Recovery Rise Time
tb
-
5
-
IF = -0.3 A, dI/dt = 100 A/μs
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-1601-Rev. B, 11-Aug-14
Document Number: 67995
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1013CX
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-4
0.010
10-5
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.008
0.006
0.004
TJ = 25 °C
TJ = 150 °C
10-6
TJ = 25 °C
10-7
0.002
10-8
0.000
0
3
6
9
12
0
3
VGS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
6
9
12
VGS - Gate-to-Source Voltage (V)
15
Gate Current vs. Gate-Source Voltage
1.5
0.8
VGS = 5 V thru 3 V
VGS = 2.5 V
ID - Drain Current (A)
ID - Drain Current (A)
1.2
0.9
VGS = 2 V
0.6
0.4
TC = 25 °C
0.2
VGS = 1.5 V
0.3
0.6
TC = 125 °C
0
TC = - 55 °C
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
2
0
0.4
Output Characteristics
1.2
1.6
2
Transfer Characteristics
90
2
72
VGS = 1.8 V
1.5
VGS = 2.5 V
1
0.5
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.8
VGS - Gate-to-Source Voltage (V)
54
Ciss
36
Coss
18
Crss
0
0
0
0.3
0.6
0.9
1.2
ID - Drain Current (A)
On-Resistance vs. Drain Current
S14-1601-Rev. B, 11-Aug-14
1.5
0
5
10
15
VDS - Drain-to-Source Voltage (V)
20
Capacitance
Document Number: 67995
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1013CX
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
1.5
ID = 0.35 A
6
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 0.4 A
VDS = 5 V
VDS = 10 V
4
VDS = 16 V
2
0
0
0.45
0.9
1.35
1.3
VGS = 4.5 V
1.1
0.9
0.7
- 50
1.8
VGS = 2.5 V
- 25
Qg - Total Gate Charge (nC)
Gate Charge
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
1.2
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 0.35 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
1.0
TJ = 125 °C
0.8
TJ = 25 °C
0.6
0.4
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
1.5
1
Source-Drain Diode Forward Voltage
3
4
5
6
VGS - Gate-to-Source Voltage (V)
7
8
On-Resistance vs. Gate-to-Source Voltage
0.7
10
8
Power (W)
0.6
VGS(th) (V)
2
ID = 250 μA
0.5
6
4
0.4
2
0.3
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
S14-1601-Rev. B, 11-Aug-14
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
Document Number: 67995
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1013CX
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.25
0.20
BVDSS Limited
100 μs
1
Power (W)
ID - Drain Current (A)
Limited by RDS(on)*
1 ms
10 ms
0.15
0.10
0.1
100 ms
TA = 25 °C
Single Pulse
0.01
0.1
0.05
1s
10 s, DC
0
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Safe Operating Area, Junction-to-Ambient
Power Derating, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67995.
S14-1601-Rev. B, 11-Aug-14
Document Number: 67995
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SC89Ć3
X
E
D
A
C
H
L
DETAIL X
3
MILLIMETERS
1
2
e1
b
e
INCHES
Dim
A
Min
Max
Min
Max
0.60
0.80
0.024
0.031
b
0.23
0.33
0.009
0.013
C
D
E
e
e1
H
L
0.10
0.20
0.004
0.008
1.50
1.70
0.059
0.067
0.75
0.95
0.030
0.037
1.00 BSC
0.50 BSC
0.040 BSC
0.020 BSC
1.50
1.70
0.059
0.067
0.30
0.50
0.012
0.020
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5869
Document Number: 71377
06-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead
(0.38 )
)
0.0170
0.0260
(0.43 )
)
0.0150
(0.51)
)
(0.66 )
)
0.0200
(1.75 )
)
0.0690
RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD
0.0250
0.0150
(0.64)
)
(0.38 )
)
0.0550
(1.40 )
)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72604
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000