Si1011X Datasheet

Si1011X
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) () Max.
ID (A)
0.640 at VGS = - 4.5 V
- 0.48
0.880 at VGS = - 2.5 V
- 0.41
1.200 at VGS = - 1.8 V
- 0.35
1.443 at VGS = - 1.5 V
- 0.10
2.475 at VGS = - 1.2 V
- 0.05
•
•
•
•
Qg (Typ.)
1.15 nC
TrenchFET® Power MOSFET
Typical ESD protection: 700 V (HBM)
Fast Switching Speed
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Portable Devices such as Smart Phones, Tablet PCs and
Mobile Computing
- Load Switch for Low Voltage Gate Drive
- Load Switch for 1.2 V Power Line
SC-89 (3-LEADS)
S
Marking Code
1
K
3
S
XX
YY
G
Lot Traceability
and Date Code
D
G
Part # Code
2
Top View
D
P-Channel MOSFET
Ordering Information: Si1011X-T1-GE3 (Lead (P b)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±5
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
V
- 0.48b, c
ID
- 0.38b, c
IDM
- 1.5
IS
- 0.16b, c
A
0.19b, c
PD
W
0.12b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t 5 s
Maximum Junction-to-Ambienta, b
Steady State
RthJA
Typical
Maximum
440
530
540
650
Unit
°C/W
Notes:
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 62660
S12-2732-Rev. B, 12-Nov-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1011X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0, ID = - 250 µA
- 12
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
IGSS
Gate-Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain
Currenta
Drain-Source On-State Resistance
ID(on)
a
RDS(on)
gfs
Forward Transconductance
-7
ID = - 250 µA
VDS = VGS, ID = - 250 µA
V
mV/°C
1.7
- 0.35
- 0.8
VDS = 0 V, VGS = ± 5 V
± 10
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 85 °C
VDS - 5 V, VGS = - 4.5 V
V
µA
- 10
- 1.5
A
VGS = - 4.5 V, ID = - 0.4 A
0.530
0.640
VGS = - 2.5 V, ID = - 0.2 A
0.730
0.880
VGS = - 1.8 V, ID = - 0.1 A
0.920
1.200
VGS = - 1.5 V, ID = - 0.05 A
1.100
1.443
VGS = - 1.2 V, ID = - 0.05 A
1.650
2.475
VDS = - 6 V, ID = - 0.4 A
1

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
62
VDS = - 6 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
td(off)
Turn-Off DelayTime
VDS = - 6 V, VGS = - 4.5 V, ID = - 0.4 A
VDS = - 6 V, VGS = - 2.5 V, ID = - 0.4 A
2
4
1.15
2
0.37
nC
0.43
f = 1 MHz
VDD = - 6 V, RL = 20 
ID  - 0.3 A, VGEN = - 5 V, Rg = 1 
tf
Fall Time
pF
20
td(on)
Turn-On Delay Time
26

12
4
8
11
20
9
18
9
18
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 1.5
IS = - 0.3 A
IF = - 0.3 A, dI/dt = 100 A/µs
A
- 0.8
- 1.2
V
12
20
ns
5
10
nC
7
5
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 62660
S12-2732-Rev. B, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1011X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-4
0.004
10-5
0.003
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
TJ = 25 °C
0.002
0.001
TJ = 150 °C
10-6
TJ = 25 °C
10-7
10-8
0.000
0
2
4
6
8
VGS - Gate-Source Voltage (V)
0
10
Gate Current vs. Gate-Source Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Gate Current vs. Gate-Source Voltage
1.5
0.2
VGS = 5 V thru 2.5 V
0.15
VGS = 2 V
ID - Drain Current (A)
ID - Drain Current (A)
1.2
0.9
0.6
VGS = 1.5 V
0.1
TC = 25 °C
0.05
0.3
TC = 125 °C
TC = - 55 °C
VGS = 1 V
0
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
0
2
Output Characteristics
0.4
0.8
1.2
VGS - Gate-to-Source Voltage (V)
1.6
Transfer Characteristics
2.5
125
2
1.5
100
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VGS = 1.2 V
VGS = 1.5 V
VGS = 1.8 V
VGS = 2.5 V
1
VGS = 4.5 V
0.5
75
Ciss
50
Coss
25
Crss
0
0
0
0.3
0.6
0.9
ID - Drain Current (A)
1.2
On-Resistance vs. Drain Current
Document Number: 62660
S12-2732-Rev. B, 12-Nov-12
1.5
0
3
6
9
VDS - Drain-to-Source Voltage (V)
12
Capacitance
For technical questions, contact: [email protected]
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1011X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
1.3
VGS = 2.5 V
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 0.5 A
4
VDS = 6 V
3
VDS = 3 V
2
VDS = 9.6 V
1
0
0
0.55
1.1
1.65
ID = 0.5 A
1.2
VGS = 4.5 V
1.1
1.0
0.9
0.8
- 50
2.2
- 25
Qg - Total Gate Charge (nC)
Gate Charge
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
10
1.5
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 0.5 A
TJ = 150 °C
1
TJ = 25 °C
1.2
0.9
TJ = 125 °C
0.6
TJ = 25 °C
0.1
0.3
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
1
Source-Drain Diode Forward Voltage
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
0.75
10
ID = 250 μA
8
Power (W)
VGS(th) (V)
0.65
0.55
6
4
0.45
2
0.35
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
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4
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
For technical questions, contact: [email protected]
Document Number: 62660
S12-2732-Rev. B, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1011X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.25
10
Limited by RDS(on)*
1
1 ms
Power (W)
ID - Drain Current (A)
0.2
10 ms
0.15
0.1
0.1
100 ms
0.05
TA = 25 °C
Single Pulse
1s
BVDSS Limited
DC, 10 s
0
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0
Safe Operating Area, Junction-to-Ambient
25
50
75
100
125
TA - Ambient Temperature (°C)
150
Power Derating, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62660.
Document Number: 62660
S12-2732-Rev. B, 12-Nov-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SC89Ć3
X
E
D
A
C
H
L
DETAIL X
3
MILLIMETERS
1
2
e1
b
e
INCHES
Dim
A
Min
Max
Min
Max
0.60
0.80
0.024
0.031
b
0.23
0.33
0.009
0.013
C
D
E
e
e1
H
L
0.10
0.20
0.004
0.008
1.50
1.70
0.059
0.067
0.75
0.95
0.030
0.037
1.00 BSC
0.50 BSC
0.040 BSC
0.020 BSC
1.50
1.70
0.059
0.067
0.30
0.50
0.012
0.020
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5869
Document Number: 71377
06-Jul-01
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead
(0.38 )
)
0.0170
0.0260
(0.43 )
)
0.0150
(0.51)
)
(0.66 )
)
0.0200
(1.75 )
)
0.0690
RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD
0.0250
0.0150
(0.64)
)
(0.38 )
)
0.0550
(1.40 )
)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72604
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000