Si1011X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A) 0.640 at VGS = - 4.5 V - 0.48 0.880 at VGS = - 2.5 V - 0.41 1.200 at VGS = - 1.8 V - 0.35 1.443 at VGS = - 1.5 V - 0.10 2.475 at VGS = - 1.2 V - 0.05 • • • • Qg (Typ.) 1.15 nC TrenchFET® Power MOSFET Typical ESD protection: 700 V (HBM) Fast Switching Speed Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Load Switch for Low Voltage Gate Drive - Load Switch for 1.2 V Power Line SC-89 (3-LEADS) S Marking Code 1 K 3 S XX YY G Lot Traceability and Date Code D G Part # Code 2 Top View D P-Channel MOSFET Ordering Information: Si1011X-T1-GE3 (Lead (P b)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±5 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C V - 0.48b, c ID - 0.38b, c IDM - 1.5 IS - 0.16b, c A 0.19b, c PD W 0.12b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 s Maximum Junction-to-Ambienta, b Steady State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Document Number: 62660 S12-2732-Rev. B, 12-Nov-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1011X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0, ID = - 250 µA - 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance ID(on) a RDS(on) gfs Forward Transconductance -7 ID = - 250 µA VDS = VGS, ID = - 250 µA V mV/°C 1.7 - 0.35 - 0.8 VDS = 0 V, VGS = ± 5 V ± 10 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 85 °C VDS - 5 V, VGS = - 4.5 V V µA - 10 - 1.5 A VGS = - 4.5 V, ID = - 0.4 A 0.530 0.640 VGS = - 2.5 V, ID = - 0.2 A 0.730 0.880 VGS = - 1.8 V, ID = - 0.1 A 0.920 1.200 VGS = - 1.5 V, ID = - 0.05 A 1.100 1.443 VGS = - 1.2 V, ID = - 0.05 A 1.650 2.475 VDS = - 6 V, ID = - 0.4 A 1 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 62 VDS = - 6 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off DelayTime VDS = - 6 V, VGS = - 4.5 V, ID = - 0.4 A VDS = - 6 V, VGS = - 2.5 V, ID = - 0.4 A 2 4 1.15 2 0.37 nC 0.43 f = 1 MHz VDD = - 6 V, RL = 20 ID - 0.3 A, VGEN = - 5 V, Rg = 1 tf Fall Time pF 20 td(on) Turn-On Delay Time 26 12 4 8 11 20 9 18 9 18 ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 1.5 IS = - 0.3 A IF = - 0.3 A, dI/dt = 100 A/µs A - 0.8 - 1.2 V 12 20 ns 5 10 nC 7 5 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62660 S12-2732-Rev. B, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1011X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-4 0.004 10-5 0.003 IGSS - Gate Current (A) IGSS - Gate Current (mA) TJ = 25 °C 0.002 0.001 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 0.000 0 2 4 6 8 VGS - Gate-Source Voltage (V) 0 10 Gate Current vs. Gate-Source Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Gate Current vs. Gate-Source Voltage 1.5 0.2 VGS = 5 V thru 2.5 V 0.15 VGS = 2 V ID - Drain Current (A) ID - Drain Current (A) 1.2 0.9 0.6 VGS = 1.5 V 0.1 TC = 25 °C 0.05 0.3 TC = 125 °C TC = - 55 °C VGS = 1 V 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 0 2 Output Characteristics 0.4 0.8 1.2 VGS - Gate-to-Source Voltage (V) 1.6 Transfer Characteristics 2.5 125 2 1.5 100 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.2 V VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V 1 VGS = 4.5 V 0.5 75 Ciss 50 Coss 25 Crss 0 0 0 0.3 0.6 0.9 ID - Drain Current (A) 1.2 On-Resistance vs. Drain Current Document Number: 62660 S12-2732-Rev. B, 12-Nov-12 1.5 0 3 6 9 VDS - Drain-to-Source Voltage (V) 12 Capacitance For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1011X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 1.3 VGS = 2.5 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.5 A 4 VDS = 6 V 3 VDS = 3 V 2 VDS = 9.6 V 1 0 0 0.55 1.1 1.65 ID = 0.5 A 1.2 VGS = 4.5 V 1.1 1.0 0.9 0.8 - 50 2.2 - 25 Qg - Total Gate Charge (nC) Gate Charge 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature 10 1.5 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.5 A TJ = 150 °C 1 TJ = 25 °C 1.2 0.9 TJ = 125 °C 0.6 TJ = 25 °C 0.1 0.3 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 1 Source-Drain Diode Forward Voltage 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 0.75 10 ID = 250 μA 8 Power (W) VGS(th) (V) 0.65 0.55 6 4 0.45 2 0.35 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 125 150 0 0.001 0.01 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient For technical questions, contact: [email protected] Document Number: 62660 S12-2732-Rev. B, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1011X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.25 10 Limited by RDS(on)* 1 1 ms Power (W) ID - Drain Current (A) 0.2 10 ms 0.15 0.1 0.1 100 ms 0.05 TA = 25 °C Single Pulse 1s BVDSS Limited DC, 10 s 0 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 Safe Operating Area, Junction-to-Ambient 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62660. Document Number: 62660 S12-2732-Rev. B, 12-Nov-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SC89Ć3 X E D A C H L DETAIL X 3 MILLIMETERS 1 2 e1 b e INCHES Dim A Min Max Min Max 0.60 0.80 0.024 0.031 b 0.23 0.33 0.009 0.013 C D E e e1 H L 0.10 0.20 0.004 0.008 1.50 1.70 0.059 0.067 0.75 0.95 0.030 0.037 1.00 BSC 0.50 BSC 0.040 BSC 0.020 BSC 1.50 1.70 0.059 0.067 0.30 0.50 0.012 0.020 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5869 Document Number: 71377 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead (0.38 ) ) 0.0170 0.0260 (0.43 ) ) 0.0150 (0.51) ) (0.66 ) ) 0.0200 (1.75 ) ) 0.0690 RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD 0.0250 0.0150 (0.64) ) (0.38 ) ) 0.0550 (1.40 ) ) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 20 Document Number: 72604 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000