Si1062X Datasheet

New Product
Si1062X
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) () Max.
ID (A)
0.420 at VGS = 4.5 V
0.5
0.492 at VGS = 2.5 V
0.2
0.597 at VGS = 1.8 V
0.2
0.762 at VGS = 1.5 V
0.05
Qg (Typ.)
1 nC
• TrenchFET® Power MOSFET
• Gate-Source ESD Protected: 1000 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load/Power Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
SC-89 (3-LEADS)
G
1
3
J
D
XX
YY
Marking Code
Lot Traceability
and Date Code
S
2
Part # Code
Top View
Ordering Information: Si1062X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
Maximum Power Dissipationa
TA = 70 °C
V
0.53a, b
ID
0.43a, b
IDM
2
IS
0.18a, b
0.22
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
A
A
a, b
W
0.14a, b
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t 5 s
Maximum Junction-to-Ambientb
Steady State
RthJA
Typ.
Max.
440
530
540
650
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1062X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductance
gfs
11
ID = 250 µA
VDS = VGS, ID = 250 µA
V
mV/°C
- 1.8
0.4
1
VDS = 0 V, VGS = ± 8 V
± 30
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 85 °C
VDS =  5 V, VGS = 4.5 V
V
µA
10
2
A
VGS = 4.5 V, ID = 0.5 A
0.350
0.420
VGS = 2.5 V, ID = 0.2 A
0.410
0.492
VGS = 1.8 V, ID = 0.2 A
0.459
0.597
VGS = 1.5 V, ID = 0.05 A
0.510
0.762
VDS = 10 V, ID = 0.5 A
7.5
VDS = 10 V, VGS = 0 V, f = 1 MHz
14
VDS = 10 V, VGS = 8 V, ID = 0.5 A
1.8
2.7
1
2

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
43
8
VDS = 10 V, VGS = 4.5 V, ID = 0.5 A
0.16
f = 1 MHz
12.2
tr
Turn-Off Delay Time
td(off)
Fall Time
nC
0.13
td(on)
Rise Time
pF
VDD = 10 V, RL = 20 
ID  0.4 A, VGEN = 4.5 V, Rg = 1 
tf

2
4
14
24
16
30
11
20
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
2
IS = 0.4 A
IF = 0.4 A, dI/dt = 100 A/µs
A
0.8
1.2
V
10
15
ns
2
4
nC
5
5
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1062X
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-4
0.8
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
10-5
0.6
0.4
TJ = 25 °C
0.2
TJ = 150 °C
10-6
TJ = 25 °C
10-7
10-8
10-9
0
0
2
4
6
8
10
VGS - Gate-Source Voltage (V)
12
0
14
Gate Current vs. Gate-Source Voltage
4
7
11
VGS - Gate-to-Source Voltage (V)
14
Gate Current vs. Gate-Source Voltage
2
0.5
VGS = 5 V thru 2 V
0.4
ID - Drain Current (A)
ID - Drain Current (A)
1.5
VGS = 1.5 V
1
0.3
TC = 25 °C
0.2
0.5
0.1
TC = 125 °C
VGS = 1 V
TC = - 55 °C
0
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
2
0
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
60
0.8
VGS = 1.8 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
45
0.6
VGS = 1.5 V
VGS = 2.5 V
VGS = 4.5 V
0.4
30
Coss
15
Crss
0
0.2
0
0.5
1
1.5
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
2
0
5
10
15
VDS - Drain-to-Source Voltage (V)
20
Capacitance
For technical questions, contact: [email protected]
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1062X
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.7
8
ID = 0.5 A
6
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 0.5 A
VDS = 10 V
VDS = 5 V
4
VDS = 16 V
2
0
0
0.5
1
1.5
VGS = 4.5 V, 2.5 V
1.5
1.3
1.1
0.9
0.7
- 50
2
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.8
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 0.5 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.65
TJ = 125
0.5
TJ = 25 °C
0.35
0.2
0.0
0.3
0.6
0.9
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
0.7
ID = 250 μA
8
Power (W)
VGS(th) (V)
0.6
0.5
6
4
0.4
2
0.3
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
TJ - Temperature (°C)
Threshold Voltage
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4
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
For technical questions, contact: [email protected]
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1062X
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.24
10
100 μs
Limited by RDS(on)*
0.18
1 ms
Power (W)
ID - Drain Current (A)
1
10 ms
0.1
100 ms
0.12
1s
0.01
0.06
DC, 10 s
TA = 25 °C
Single Pulse
BVDSS Limited
0
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0
Safe Operating Area, Junction-to-Ambient
25
50
75
100
125
TA - Ambient Temperature (°C)
150
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62661.
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SC89Ć3
X
E
D
A
C
H
L
DETAIL X
3
MILLIMETERS
1
2
e1
b
e
INCHES
Dim
A
Min
Max
Min
Max
0.60
0.80
0.024
0.031
b
0.23
0.33
0.009
0.013
C
D
E
e
e1
H
L
0.10
0.20
0.004
0.008
1.50
1.70
0.059
0.067
0.75
0.95
0.030
0.037
1.00 BSC
0.50 BSC
0.040 BSC
0.020 BSC
1.50
1.70
0.059
0.067
0.30
0.50
0.012
0.020
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5869
Document Number: 71377
06-Jul-01
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead
(0.38 )
)
0.0170
0.0260
(0.43 )
)
0.0150
(0.51)
)
(0.66 )
)
0.0200
(1.75 )
)
0.0690
RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD
0.0250
0.0150
(0.64)
)
(0.38 )
)
0.0550
(1.40 )
)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72604
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000