New Product Si1062X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.420 at VGS = 4.5 V 0.5 0.492 at VGS = 2.5 V 0.2 0.597 at VGS = 1.8 V 0.2 0.762 at VGS = 1.5 V 0.05 Qg (Typ.) 1 nC • TrenchFET® Power MOSFET • Gate-Source ESD Protected: 1000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits SC-89 (3-LEADS) G 1 3 J D XX YY Marking Code Lot Traceability and Date Code S 2 Part # Code Top View Ordering Information: Si1062X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C Maximum Power Dissipationa TA = 70 °C V 0.53a, b ID 0.43a, b IDM 2 IS 0.18a, b 0.22 PD TJ, Tstg Operating Junction and Storage Temperature Range Unit A A a, b W 0.14a, b - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 s Maximum Junction-to-Ambientb Steady State RthJA Typ. Max. 440 530 540 650 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. Document Number: 62661 S12-2732-Rev. B, 12-Nov-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1062X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductance gfs 11 ID = 250 µA VDS = VGS, ID = 250 µA V mV/°C - 1.8 0.4 1 VDS = 0 V, VGS = ± 8 V ± 30 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V V µA 10 2 A VGS = 4.5 V, ID = 0.5 A 0.350 0.420 VGS = 2.5 V, ID = 0.2 A 0.410 0.492 VGS = 1.8 V, ID = 0.2 A 0.459 0.597 VGS = 1.5 V, ID = 0.05 A 0.510 0.762 VDS = 10 V, ID = 0.5 A 7.5 VDS = 10 V, VGS = 0 V, f = 1 MHz 14 VDS = 10 V, VGS = 8 V, ID = 0.5 A 1.8 2.7 1 2 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 43 8 VDS = 10 V, VGS = 4.5 V, ID = 0.5 A 0.16 f = 1 MHz 12.2 tr Turn-Off Delay Time td(off) Fall Time nC 0.13 td(on) Rise Time pF VDD = 10 V, RL = 20 ID 0.4 A, VGEN = 4.5 V, Rg = 1 tf 2 4 14 24 16 30 11 20 ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 2 IS = 0.4 A IF = 0.4 A, dI/dt = 100 A/µs A 0.8 1.2 V 10 15 ns 2 4 nC 5 5 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62661 S12-2732-Rev. B, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1062X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-4 0.8 IGSS - Gate Current (A) IGSS - Gate Current (mA) 10-5 0.6 0.4 TJ = 25 °C 0.2 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 10-9 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 12 0 14 Gate Current vs. Gate-Source Voltage 4 7 11 VGS - Gate-to-Source Voltage (V) 14 Gate Current vs. Gate-Source Voltage 2 0.5 VGS = 5 V thru 2 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 1.5 VGS = 1.5 V 1 0.3 TC = 25 °C 0.2 0.5 0.1 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 60 0.8 VGS = 1.8 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 45 0.6 VGS = 1.5 V VGS = 2.5 V VGS = 4.5 V 0.4 30 Coss 15 Crss 0 0.2 0 0.5 1 1.5 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 62661 S12-2732-Rev. B, 12-Nov-12 2 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 Capacitance For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1062X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.7 8 ID = 0.5 A 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.5 A VDS = 10 V VDS = 5 V 4 VDS = 16 V 2 0 0 0.5 1 1.5 VGS = 4.5 V, 2.5 V 1.5 1.3 1.1 0.9 0.7 - 50 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.8 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.5 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.65 TJ = 125 0.5 TJ = 25 °C 0.35 0.2 0.0 0.3 0.6 0.9 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.7 ID = 250 μA 8 Power (W) VGS(th) (V) 0.6 0.5 6 4 0.4 2 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient For technical questions, contact: [email protected] Document Number: 62661 S12-2732-Rev. B, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si1062X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.24 10 100 μs Limited by RDS(on)* 0.18 1 ms Power (W) ID - Drain Current (A) 1 10 ms 0.1 100 ms 0.12 1s 0.01 0.06 DC, 10 s TA = 25 °C Single Pulse BVDSS Limited 0 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 Safe Operating Area, Junction-to-Ambient 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62661. Document Number: 62661 S12-2732-Rev. B, 12-Nov-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SC89Ć3 X E D A C H L DETAIL X 3 MILLIMETERS 1 2 e1 b e INCHES Dim A Min Max Min Max 0.60 0.80 0.024 0.031 b 0.23 0.33 0.009 0.013 C D E e e1 H L 0.10 0.20 0.004 0.008 1.50 1.70 0.059 0.067 0.75 0.95 0.030 0.037 1.00 BSC 0.50 BSC 0.040 BSC 0.020 BSC 1.50 1.70 0.059 0.067 0.30 0.50 0.012 0.020 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5869 Document Number: 71377 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 3-Lead (0.38 ) ) 0.0170 0.0260 (0.43 ) ) 0.0150 (0.51) ) (0.66 ) ) 0.0200 (1.75 ) ) 0.0690 RECOMMENDED MINIMUM PADS FOR SC-89: 3-LEAD 0.0250 0.0150 (0.64) ) (0.38 ) ) 0.0550 (1.40 ) ) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 20 Document Number: 72604 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000