PIN diodes MA3X557 (MA557) Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.4±0.2 5˚ 2 1 (0.65) • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 2.8+0.2 –0.3 1.50+0.25 –0.05 ■ Features (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit Reverse voltage (DC) VR 40 V Peak reverse voltage VRM 45 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Operating ambient temperature * Topr −25 to +85 °C Storage temperature Tstg −55 to +150 °C 1.1+0.3 –0.1 Rating 1.1+0.2 –0.1 10˚ Symbol 1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 Mini3-G1 Package 0 to 0.1 Parameter 0.16+0.10 –0.06 3 Marking Symbol: M30 Internal Connection Note) *: Maximum ambient temperature during operation 3 1 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 100 nA IR VR = 40 V Forward voltage (DC) VF IF = 100 mA 1.05 1.2 V Diode capacitance CD VR = 15 V, f = 1 MHz 0.3 0.5 pF Forward dynamic resistance * rf1 IF = 10 µA, f = 100 MHz rf2 IF = 10 mA, f = 100MHz Reverse current (DC) 1 2 6 kΩ 10 Ω Note) 1. Rated input/output frequency: 100 MHz 2. Each characteristic is a standard for individual diode 3. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number. Publication date: April 2002 SKL00003BED 1 MA3X557 I F VF CD VR 1 000 2 Ta = 25°C IR T a 100 f = 1 MHz Ta = 25°C VR = 40 V 100 10 1 Reverse current IR (nA) Diode capacitance CD (pF) Forward current IF (mA) 1 0.5 0.3 0.2 0.1 10 1 0.1 0.05 0.03 0.02 0.1 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) Forward voltage VF (V) rf I F Forward dynamic resistance rf (Ω) 10 000 f = 100 MHz Ta = 25°C 1 000 100 10 1 0.01 0.1 1 10 Forward current IF (mA) 2 SKL00003BED 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR