PMEG3002ESF 30 V, 0.2 A low VF MEGA Schottky barrier rectifier 17 February 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small Chip-Scale Package (CSP). 2. Features and benefits • • • • • Average forward current IF(AV) ≤ 0.2 A Reverse voltage VR ≤ 30 V Low forward voltage typ. VF = 310 mV Low reverse current typ. IR = 0.33 µA Package height typ. 0.3mm 3. Applications • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Ultra high speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 140 °C; [1] Min Typ Max Unit - - 0.2 A - - 0.2 A square wave δ = 0.5; f = 20 kHz; Tsp ≤ 148 °C; square wave VR reverse voltage Tj = 25 °C - - 30 V VF forward voltage IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; - 310 390 mV Tj = 25 °C IR reverse current VR = 10 V; Tj = 25 °C; pulsed - 0.33 2 µA trr reverse recovery time IF = 500 mA; IR = 500 mA; - 1.42 - ns IR(meas) = 100 mA; Tj = 25 °C [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Scan or click this QR code to view the latest information for this product PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DSN0603-2 (SOD962-2) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG3002ESF Package Name Description Version DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PMEG3002ESF K PMEG3002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 30 V IF forward current Tsp ≤ 145 °C; δ = 1 - 0.28 A IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 140 °C; - 0.2 A - 0.2 A [1] square wave δ = 0.5; f = 20 kHz; Tsp ≤ 148 °C; square wave IFRM repetitive peak forward current tp = 1 ms; δ ≤ 0.25 - 1.5 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 3.5 A Ptot total power dissipation Tamb ≤ 25 °C [2] - 405 mW [3] - 660 mW [1] - 1200 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 2 1 cm each. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] PMEG3002ESF Product data sheet Min Typ Max Unit [1][2] - - 310 K/W [1][3] - - 190 K/W [1][4] - - 105 K/W [5] - - 40 K/W [2] [3] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode [4] [5] 1 cm each. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of anode tab. 2 All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-006823 103 duty cycle = Zth(j-a) (K/W) 1 0.75 102 0.5 0.33 0.25 0.1 0.2 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-006824 103 Zth(j-a) (K/W) duty cycle = 102 0.75 0.33 0.2 0.05 10 10-3 1 0.5 0.25 0.1 0.02 0.01 0 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for anode and cathode 1 cm each Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier 102 aaa-006825 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 100 µA; tp = 300 µs; δ = 0.02; 30 - - V forward voltage IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02; - 185 255 mV - 245 320 mV - 310 390 mV - 405 480 mV - 460 535 mV VR = 10 V; Tj = 25 °C; pulsed - 0.33 2 µA VR = 30 V; Tj = 25 °C; pulsed - 1.8 9 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 21 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 8 - pF IF = 500 mA; IR = 500 mA; - 1.42 - ns VF Tj = 25 °C Tj = 25 °C IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IR Cd trr reverse current diode capacitance reverse recovery time IR(meas) = 100 mA; Tj = 25 °C PMEG3002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-011861 1 IF (A) IR (A) (1) 10-1 (2) aaa-011862 10-2 (1) 10-3 10-4 (2) 10-5 (3) 10-6 10-2 (4) 10-7 10-8 10-3 10-9 (3) 10-4 Fig. 4. 0 (4) 0.2 (5) 10-10 (5) 0.4 VF (V) 10-11 0.6 0 10 pulsed condition (1) Tj = 150 °C pulsed condition (1) Tj = 150 °C (2) Tj = 125 °C (2) Tj = 125 °C (3) Tj = 85 °C (3) Tj = 85 °C (4) Tj = 25 °C (4) Tj = 25 °C (5) Tj = −40 °C (5) Tj = −40 °C Forward current as a function of forward voltage; typical values Fig. 5. aaa-011863 40 20 Reverse current as a function of reverse voltage; typical values aaa-012791 0.12 CD (PF) (4) (3) PF(AV) (W) 30 30 VR (V) (2) 0.08 (1) 20 0.04 10 0 Fig. 6. 0 10 20 30 VR (V) 0 40 0 f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. PMEG3002ESF Product data sheet 0.2 IF(AV) (A) 0.3 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 17 February 2015 0.1 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-012792 0.025 PR(AV) (W) (1) IF(AV) (A) (2) 0.020 aaa-012793 0.3 (1) (3) 0.2 (4) (2) 0.015 0.010 (3) 0.1 (4) 0.005 0 0 10 20 VR (V) 0 30 Tj = 125 °C 25 50 75 Average reverse power dissipation as a function of reverse voltage; typical values aaa-012794 0.3 0.2 Fig. 9. Average forward current as a function of ambient temperature; typical values aaa-012795 (1) 0.2 (3) 0.1 (2) (3) 0.1 (4) 25 50 75 (4) 100 125 0 150 175 Tamb (°C) FR4 PCB, mounting pad for anode and cathode 1 25 50 75 100 125 150 175 Tamb (°C) Tj = 150 °C cm each Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values Product data sheet 0 Ceramic PCB, Al2O3, standard footprint 2 PMEG3002ESF 150 175 Tamb (°C) (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz IF(AV) (A) (2) 0 125 0.3 (1) IF(AV) (A) 0 100 FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 8. 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-012796 0.3 (1) IF(AV) (A) 0.2 (2) (3) 0.1 (4) 0 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 14. Duty cycle definition PMEG3002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 12. Package outline 0.325 0.275 0.32 0.28 1 0.03 max 0.15 0.13 0.4 0.625 0.575 2 Dimensions in mm 0.25 0.23 14-12-03 Fig. 15. Package outline DSN0603-2 (SOD962-2) 13. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2 0.85 0.4 0.4 R0.025 (8×) 0.24 (2×) 0.14 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962-2_fr Fig. 16. Reflow soldering footprint for DSN0603-2 (SOD962-2) PMEG3002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 14 PMEG3002ESF NXP Semiconductors 30 V, 0.2 A low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG3002ESF v.2 20150217 Product data sheet - PMEG3002ESF v.1 Modifications: • PMEG3002ESF v.1 20140415 - - PMEG3002ESF Product data sheet Product status changed Preliminary data sheet All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 February 2015 PMEG3002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 17 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 14