TVS Diodes Transient Voltage Suppressor Diodes ESD112-B1-02 Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD112-B1-02ELS ESD112-B1-02EL Data Sheet Rev. 1.3, 2013-11-27 Final Power Management & Multimarket ESD112-B1-02 Series Revision History: Rev.1.2, 2013-06-10 Page or Item Subjects (major changes since previous revision) Rev. 1.3, 2013-11-27: Final Data Sheet ESD112-B1-02EL Status change to final Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 2 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1.1 Features • • • • • • • ESD / transient protection of RF signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact) – IEC61000-4-4 (EFT): ±40 A (5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 μs) Maximum working voltage: VRWM ±5.3 V Extremely low capacitance: CL = 0.2 pF (typical) Low clamping voltage: VCL = 29 V (typical) at IPP = 16 A Very low reverse current IR < 1 nA typ. Very small form factor down to 0.62 x 0.32 x 0.31 mm3 Pb-free (RoHS compliant) and halogen free package 1.2 • • Application Examples ESD protection of sensitive RF signal lines, Bluetooth Class 2, Automated Meter Reading RF antenna protection, frontend module, GPS, mobile TV, FM radio, UWB 1.3 Product Description Pin 1 Pin 2 Pin 1 marking (lasered) Pin 1 TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. v s d Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Ordering Information Type Package Configuration Marking code ESD112-B1-02ELS TSSLP-2-4 1 line, bi-directional T ESD112-B1-02EL TSLP-2-20 1 line, bi-directional TE Final Data Sheet 3 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics 2 Characteristics Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. VESD -20 – 20 kV IPP -3 – 3 A Operating temperature range TOP -55 – 125 °C Storage temperature 1) VESD according to IEC61000-4-2 2) IPP according to IEC61000-4-5 Tstg -65 – 150 °C ESD air / contact discharge 1) Peak pulse current (tp = 8/20 μs) 2) Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics at TA=25°C, unless otherwise specified ! ! ! Figure 2-1 Definitions of electrical characteristics Final Data Sheet 4 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. Reverse working voltage VRWM –5.3 – 5.3 V Breakdown voltage 7 – – V VBR Note / Test Condition IR = 1 mA, from pin 1 to pin 2, from pin 2 to pin 1 Reverse current Table 2-3 IR <1 50 nA VR = 5.3 V Unit Note / Test Condition pF VR = 0 V, f = 1 MHz RF Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Diode capacitance CL Series inductance Table 2-4 – LS Values Min. Typ. Max. – 0.23 0.4 – 0.2 0.4 – 0.2 – – 0.4 – VR = 0 V, f = 1 GHz nH ESD112-B1-02ELS ESD112-B1-02EL ESD Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol 2) Clamping voltage VCL 1) Clamping voltage 2) Values Unit Note / Test Condition V ITLP = 16 A Min. Typ. Max. – 29 – – 44 – ITLP = 30 A – 11 17 IPP = 1 A – 15 21 IPP = 3 A 1 – Dynamic resistance RDYN – 1) IPP according to IEC61000-4-5 (tp = 8/20 µs) Ω 2) Please refer to Application Note AN210 [4]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between ITLP1 = 10 A and ITLP2 = 40 A. Final Data Sheet 5 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics Typical Characteristics at TA = 25 °C, unless otherwise specified 10 -7 10 -8 +125°C 10-9 IR [A] 2.2 10 -10 10 -11 10-12 +85°C +25°C 0 1 2 3 VR [V] 4 5 6 5 6 Figure 2-2 Reverse current: IR = f(VR), TA = parameter 0.4 CL [pF] 0.3 0.2 0.1 0 0 1 2 3 VR [V] 4 Figure 2-3 Line capacitance: CL = f(VR), f = 1 MHz Final Data Sheet 6 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics 0.26 0.25 5.3V CL [pF] 0.24 3.3V 0.23 0V 0.22 0.21 0.2 0 500 1000 1500 2000 2500 3000 f [MHz] Figure 2-4 Line capacitance: CL = f(f), VR = parameter 1 0.9 0.8 CL [pF] 0.7 0.6 5.3V 0.5 0.4 3.3V 0.3 0V 0.2 0.1 0 -50 -25 0 25 50 TA [°C] 75 100 125 Figure 2-5 Line capacitance: CL = f(TA), VR = parameter Final Data Sheet 7 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics 120 100 VCL-max-peak = 112 [V] VCL [V] 80 VCL-30ns-peak = 24.8 [V] 60 40 20 0 -20 -100 0 100 200 300 400 500 tp [ns] 600 700 800 900 700 800 900 Figure 2-6 IEC61000-4-2 VCL = f(t), 8 kV positiv pulse from pin 1 to pin 2 20 0 VCL [V] -20 -40 -60 VCL-max-peak = -116 [V] -80 VCL-30ns-peak = -25.0 [V] -100 -120 -100 0 100 200 300 400 500 tp [ns] 600 Figure 2-7 IEC61000-4-2 VCL = f(t), 8 kV negativ pulse from pin 1 to pin 2 Final Data Sheet 8 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics 180 160 140 VCL [V] 120 100 VCL-max-peak = 162 [V] 80 VCL-30ns-peak = 37.4 [V] 60 40 20 0 -20 -100 0 100 200 300 400 500 tp [ns] 600 700 800 900 700 800 900 Figure 2-8 IEC61000-4-2 VCL = f(t), 15 kV positiv pulse from pin 1 to pin 2 20 0 -20 VCL [V] -40 -60 VCL-max-peak = -169 [V] -80 VCL-30ns-peak = -37.6 [V] -100 -120 -140 -160 -180 -100 0 100 200 300 400 500 tp [ns] 600 Figure 2-9 IEC61000-4-2 VCL = f(t), 15 kV negativ pulse from pin 1 to pin 2 Final Data Sheet 9 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics 20 ESD112-B1-02ELS RDYN ITLP [A] 30 15 RDYN=1.0Ω 20 10 10 5 0 0 5 10 15 20 25 30 35 40 45 50 55 60 VTLP [V] Equivalent VIEC [kV] 40 0 Figure 2-10 Clamping voltage : ITLP = f(VTLP) [4] 17 16 15 VCL [V] 14 13 12 11 10 9 8 7 0 1 2 IPP [A] 3 4 Figure 2-11 Clampine voltage: VCL = f(IPP), tp = 8/20 μs Final Data Sheet 10 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Application Information Application Information Connector 3 Protected signal line ESD I/O sensitive device 1 2 The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible . Pin 2 (or pin 1) should be connected directly to a ground plane on the board . A pplic ation_E S D0P 2RF -02x x .v s d Figure 3-1 Single line, bi-directional ESD / Transient protection [1], [2] Final Data Sheet 11 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Package Information 4 Package Information 4.1 TSSLP-2-4 (mm) [5] Top view Bottom view 0.31 +0.01 -0.02 0.32 ±0.05 0.355 0.62 ±0.05 2 Cathode marking 0.2 ±0.035 1) 1 0.26 ±0.035 1) 0.05 MAX. 1) Dimension applies to plated terminals TSSLP-2-3, -4-PO V01 Figure 4-1 TSSLP-2-4 Package overview 0.19 0.24 Solder mask 0.19 0.57 0.14 0.62 Copper 0.19 0.27 0.24 0.32 Stencil apertures TSSLP-2-3, -4-FP V02 Figure 4-2 TSSLP-2-4: Footprint g 0.35 Tape type Ex Ey Punched Tape 0.43 0.73 Embossed Tape 0.37 0.67 8 Ey 4 Cathode marking Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. Ex TSSLP-2-3, -4-TP V03 Figure 4-3 TSSLP-2-4: Packing Figure 4-4 TSSLP-2-4: Marking (example) Final Data Sheet 12 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Package Information 4.2 TSLP-2-20 (mm) [5] Top view Bottom view 0.31 +0.01 -0.02 0.6 ±0.05 1±0.05 2 1 0.25 ±0.035 1) 0.65 ±0.05 0.05 MAX. 0.5 ±0.035 1) Cathode marking 1) Dimension applies to plated terminals TSLP-2-19, -20-PO V01 Figure 4-5 TSLP-2-20: Package overview 0.28 0.35 Solder mask 0.38 0.93 0.3 1 Copper 0.28 0.45 0.35 0.6 Stencil apertures TSLP-2-19, -20-FP V01 Figure 4-6 TSLP-2-20: Footprint 0.4 1.16 Cathode marking 8 4 0.76 TSLP-2-19, -20-TP V02 Figure 4-7 TSLP-2-20: Packing Type code 12 Cathode marking TSLP-2-19, -20-MK V01 Figure 4-8 TSLP-2-20: Marking (example) Final Data Sheet 13 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series References References [1] Infineon AG - Application Note AN167: ESD Protection for Broadband LNA BGA728L7 for Portable and Mobile TV Applications [2] Infineon AG - Application Note AN178: ESD Protection for RF Antennas using Infineon ESD0P4RFL and ESD0P2RF-xx [3] Infineon AG - Application Note AN200: Low Cost FM Radio LNA using BFR340F for Mobile Phone Applications [4] Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level using VF-TLP Characterization Methodology [5] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages Final Data Sheet 14 Rev. 1.3, 2013-11-27 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG