Composite Transistors XP6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1216 × 2 elements ■ Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO 50 V VCEO 50 V IC 100 mA PT 150 mW Total power dissipation Overall Junction temperature Storage temperature +0.05 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 Tj 150 ˚C Tstg –55 to +150 ˚C 0.2±0.1 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 8Y Internal Connection 1 Tr1 2 3 ■ Electrical Characteristics Parameter 5 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA 160 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz Input resistance R1 Collector cutoff current *1 6 460 0.99 0.25 4.9 V 0.2 150 –30% V 4.7 V MHz +30% kΩ Ratio between 2 elements 1 Composite Transistors XP6216 PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 2 4 6 8 10 Collector to emitter voltage VCE 12 IC/IB=10 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 0.03 0.01 0.1 0 (V) 1 3 10 10000 –25˚C 200 150 100 50 30 100 1 (mA) 3 3 2 10 30 100 300 1000 Collector current IC (mA) VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 25˚C 250 IO — VIN 4 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 2 Ta=75˚C 300 0 0.3 Collector current IC f=1MHz IE=0 Ta=25˚C 5 VCE=10V 350 –25˚C Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100