PANASONIC XP6216

Composite Transistors
XP6216
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
1
6
2
5
3
4
UN1216 × 2 elements
■ Absolute Maximum Ratings
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
VCBO
50
V
VCEO
50
V
IC
100
mA
PT
150
mW
Total power dissipation
Overall Junction temperature
Storage temperature
+0.05
0 to 0.1
●
0.12 –0.02
■ Basic Part Number of Element
0.7±0.1
0.9±0.1
0.2
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
0.425
0.65
●
2.0±0.1
■ Features
1.25±0.1
0.65
0.425
0.2±0.05
2.1±0.1
Tj
150
˚C
Tstg
–55 to +150
˚C
0.2±0.1
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 8Y
Internal Connection
1
Tr1
2
3
■ Electrical Characteristics
Parameter
5
Tr2
4
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
ICBO
VCB = 50V, IE = 0
0.1
µA
ICEO
VCE = 50V, IB = 0
0.5
µA
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
0.01
mA
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
160
Forward current transfer hFE ratio
hFE (small/large)*1
VCE = 10V, IC = 5mA
0.5
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 0.3mA
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = 5V, VB = 2.5V, RL = 1kΩ
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
Input resistance
R1
Collector cutoff current
*1
6
460
0.99
0.25
4.9
V
0.2
150
–30%
V
4.7
V
MHz
+30%
kΩ
Ratio between 2 elements
1
Composite Transistors
XP6216
PT — Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
120
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
2
4
6
8
10
Collector to emitter voltage VCE
12
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
0
(V)
1
3
10
10000
–25˚C
200
150
100
50
30
100
1
(mA)
3
3
2
10
30
100
300
1000
Collector current IC (mA)
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
25˚C
250
IO — VIN
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
2
Ta=75˚C
300
0
0.3
Collector current IC
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
350
–25˚C
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100