Composite Transistors XP03383 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UN1213+UN111F ■ Absolute Maximum Ratings Parameter 1 : Emitter(Tr1) 2 : Base(Tr1) 3 : Emitter(Tr2) (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Tr1 Tr2 0.7±0.1 ■ Basic Part Number of Element Storage temperature 0.12 – 0.02 ● Two elements incorporated into one package. (Transistors with built-in resistor, Tr1 collecter is connected to Tr2 base.) Reduction of the mounting area and assembly cost by one half. 1.25±0.1 0.2 ■ Features 0.65 0.425 ● 0.2±0.05 Unit: mm For switching/digital circuits 0.2±0.1 4 : Collector(Tr2) 5 : Collector(Tr1) Base(Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: DV Internal Connection 1 Tr1 5 2 3 Tr2 4 1 Composite Transistors ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 3.5V, RL = 1kΩ Input resistance R1 Resistance ratio R1/R2 Transition frequency fT Collector cutoff current ● 80 4.9 –30% 0.8 VCB = 10V, IE = –1mA, f = 200MHz V 0.2 V 47 +30% kΩ 1.0 1.2 150 MHz Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Collector cutoff current 2 XP03383 ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA –1.0 mA – 0.25 V Emitter cutoff current IEBO VEB = –6V, IC = 0 Forward current transfer ratio hFE VCE = –10V, IC = –5mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ Input resistance R1 Resistance ratio R1/R2 Transition frequency fT 30 –4.9 –30% V 4.7 – 0.2 V +30% kΩ 0.47 VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Composite Transistors XP03383 Common characteristics chart PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UTr1 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 120 0.9mA 0.8mA 0.7mA 0.6mA 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 0.1 0.03 Collector to emitter voltage VCE (V) –25˚C 3 10 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 30 100 1 (mA) 3 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 4 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 1 Collector current IC f=1MHz IE=0 Ta=25˚C 5 VCE=10V 350 0 0.3 Cob — VCB 6 Ta=75˚C 25˚C 0.01 0.1 0 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 3 Composite Transistors XP03383 Characteristics charts of Tr2 IC — VCE VCE(sat) — IC Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector current IC (mA) –200 –160 –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 –10000 –30 Ta=75˚C 25˚C 80 –25˚C 40 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 4 –3 120 IO — VIN f=1MHz IE=0 Ta=25˚C 5 –1 VCE=–10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE –240 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100