Schottky Barrier Diodes (SBD) MA3X717D, MA3X717E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V 30 mA Forward current (DC) Single Peak forward current Single IF Double* 150 Double* 1.45 + 0.1 + 0.1 0.8 0.1 to 0.3 0.4 ± 0.2 JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) 20 IFM 3 0 to 0.1 Rating 1 0.16 − 0.06 + 0.2 1.1 − 0.1 Symbol mA Marking Symbol • MA3X717D : M3E • MA3X717E : M3D Internal Connection 110 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.65 ± 0.15 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.95 • Two MA3X717s are contained in one package • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704D/E) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 1.5 0.95 + 0.2 2.9 − 0.05 ■ Features 1.9 ± 0.2 0.65 ± 0.15 + 0.25 − 0.05 0.4 − 0.05 For switching circuits 1 1 Note) * : Value per chip MA3X717D MA3X717E 1 Cathode Anode 2 Cathode Anode 3 Anode Cathode 3 3 2 2 D ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Detection efficiency Symbol Conditions E Max Unit IR VR = 30 V Min Typ 30 µA VF1 IF = 1 mA 0.3 V VF2 IF = 30 mA 1 V Ct VR = 1 V, f = 1 MHz trr η 1.5 pF IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1 ns Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3X717D, MA3X717E Schottky Barrier Diodes (SBD) IF V F 104 0.8 103 − 20°C 10 1 10−1 IF = 30 mA 0.6 10 mA 0.4 Reverse current IR (µA) Forward voltage VF (V) Forward current IF (mA) Ta = 125°C 1.0 Ta = 125°C 75°C 25°C 102 IR VR VF Ta 103 75°C 102 25°C 10 1 0.2 1 mA 10−2 0 0.4 0.8 1.2 1.6 2.0 10−1 0 −40 2.4 Forward voltage VF (V) 0 160 VR = 30 V 3V 1V 103 2.4 2.0 1.6 1.2 0.8 102 10 1 0.4 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 30 10−1 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) IR T a Reverse current IR (µA) Terminal capacitance Ct (pF) 120 104 f = 1 MHz Ta = 25°C 2.8 80 Ambient temperature Ta (°C) Ct VR 3.2 40 200 30