Schottky Barrier Diodes (SBD) MA3S781D Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 ■ Features VR 30 V Peak reverse voltage VRM 30 V Single 0.12 − 0.02 Reverse voltage (DC) + 0.05 0.28 ± 0.05 Unit + 0.05 Rating Peak forward current 3 0.60 − 0.03 Symbol Single 1 2 ■ Absolute Maximum Ratings Ta = 25°C Forward current (DC) 1.60 ± 0.1 0.80 ± 0.05 + 0.05 • SS-mini type 3-pin package • Allowing high-density mounting • Anode common type Parameter 0.80 0.28 ± 0.05 For high-speed switching circuits 0.44 0.44 + 0.05 30 IF Double 0.88 − 0.03 mA 1 : Cathode 1 3 : Anode 1 2 : Cathode 2 Anode 2 SS-Mini Type Package (3-pin) 20 IFM 150 Double mA 110 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Marking Symbol: M2P Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 1.0 µA Forward voltage (DC) VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 1.0 pF V Reverse recovery time* trr 1.0 ns Detection efficiency η IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3S781D Schottky Barrier Diodes (SBD) IF V F 1.4 75°C 25°C 10 1 10−1 1.2 1.0 0.8 IF = 30 mA 0.6 0.4 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1 10−2 0 IR T a 40 80 120 160 200 25°C 0 5 10 15 20 25 30 Reverse voltage VR (V) IF(surge) tW Ct VR 1 000 3.0 VR = 30 V 10 V 1V 10 1 10−1 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Ta = 25°C 102 Reverse current IR (µA) 75°C Ambient temperature Ta (°C) 103 10−2 −40 10 1 mA 0 −40 1.2 Ta = 125°C 10−1 3 mA 0.2 2 Reverse current IR (µA) 102 − 20°C Ta = 125°C Forward voltage VF (V) Forward current IF (mA) 103 1.6 102 10−2 IR VR VF Ta 103 0 5 10 15 20 25 Reverse voltage VR (V) 30 300 IF(surge) tW 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 10 Pulse width tW (ms) 30