Schottky Barrier Diodes (SBD) MA3Z793 Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 For super-high speed switching circuit For small current rectification + 0.1 • Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency Parameter Symbol Rating Unit VR 30 V Reverse voltage (DC) Repetitive peak reverse voltage VRRM 30 V IFM 300 mA Single Series*2 100 IF(AV) Series*2 IFSM 1 + 0.1 0.15 − 0.05 0.9 ± 0.1 Marking Symbol: M4A mA Internal Connection 70 Non-repetitive peak forward surge current*1 3 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 EIAJ : SC-70 Flat S-Mini Type Package(3-pin) 200 Single 1 2 ■ Absolute Maximum Ratings Ta = 25°C Average forward current 0.425 0.3 − 0 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 ■ Features Peak forward current 1.25 ± 0.1 0.425 A 1 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 3 2 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 15 µA 0.55 V Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 20 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 2 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3Z793 Schottky Barrier Diodes (SBD) IF V F 1 10−1 10−2 1.0 104 0.8 103 0.6 0.4 IF = 100 mA 0.2 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 40 80 120 160 200 IR T a 103 Reverse current IR (µA) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 12 8 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 VR = 30 V 3V 1V 102 10 1 4 30 10−1 −40 75°C 10 25°C 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 104 16 102 10−1 0 Ct VR 20 Ta = 125°C 1 10 mA 3 mA Ambient temperature Ta (°C) 24 Reverse current IR (µA) Forward current IF (mA) − 20°C Ta = 125°C 10 Forward voltage VF (V) 75°C 25°C 102 IR VR VF Ta 103 200 30