SiA918EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) 0.058 at VGS = 4.5 V 4.5 a 0.065 at VGS = 2.5 V 4.5 a 0.077 at VGS = 1.8 V 4.5 a • TrenchFET® power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1000 V (HBM) • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Qg (TYP.) 3.6 nC PowerPAK® SC-70-6L Dual S2 4 D1 6 G2 5 APPLICATIONS • Portable devices such as smart phones, tablet PCs and mobile computing - Load switch - DC/DC converter - Power management D1 D2 05 2. m m 1 m 5m 2.0 Top View 3 D2 Bottom View 2 G1 1 S1 D1 D2 G1 Marking Code: CL Ordering Information: SiA918EDJ-T1-GE3 (lead (Pb)-free and halogen free) G2 N-Channel MOSFET S1 N-Channel MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±8 TC = 70 °C 4.5 a ID TA = 25 °C 4.4 b, c 3.5 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) IDM TC = 25 °C Continuous Source-Drain Diode Current 4.5 a 1.6 b, c TC = 25 °C 7.8 TC = 70 °C 5 PD TA = 25 °C W 1.9 b, c 1.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 15 IS TA = 25 °C Maximum Power Dissipation V 4.5 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) d,e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient b, f t5s RthJA 52 65 Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state condition is 110 °C/W. S16-1004-Rev. A, 30-May-16 Document Number: 79034 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA918EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - - V 28 - - -2.4 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductancea ID = 250 μA VDS = VGS, ID = 250 μA 0.4 - 0.9 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 VDS = 0 V, VGS = ± 8 V - - ±5 VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 VDS 5 V, VGS = 4.5 V 10 - - VGS = 4.5 V, ID = 3 A - 0.046 0.058 VGS = 2.5 V, ID = 3 A - 0.050 0.065 VGS = 1.8 V, ID = 1 A - 0.055 0.077 VDS = 15 V, ID = 3 A - 14 - VDS = 15 V, VGS = 8 V, ID = 10 A - 6.2 9.5 - 3.6 5.5 VDS = 15 V, VGS = 4.5 V, ID = 10 A - 0.45 - - 0.53 - f = 1 MHz 0.9 4.3 8.6 - 5 10 VDD = 15 V, RL = 5 ID 3 A, VGEN = 4.5 V, Rg = 1 - 30 60 - 30 60 tf - 41 80 td(on) - 2 5 - 23 50 - 11 20 - 26 50 IGSS IDSS ID(on) RDS(on) gfs mV/°C V μA A S Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tr td(off) VDD = 15 V, RL = 5 ID 3 A, VGEN = 8 V, Rg = 1 tf nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 3 A, VGS = 0 V IF = 3 A, dI/dt = 100 A/μs, TJ = 25 °C - - 4.5 - - 15 - 0.84 1.2 V - 11 20 ns - 4.4 10 nC - 8 - - 3 - A ns Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1004-Rev. A, 30-May-16 Document Number: 79034 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA918EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 15.0 10-2 10000 TJ = 25 °C 6.0 100 3.0 10-4 TJ = 150 °C 1000 -5 10 1st line 2nd line 9.0 2nd line IGSS - Gate Current (A) 1000 1st line 2nd line 2nd line IGSS - Gate Current (mA) 10-3 12.0 10-6 10-7 TJ = 25 °C 100 10-8 10-9 10-10 10 0 0 2 4 6 8 10 12 14 10 0 16 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage Axis Title Axis Title 15 15 10000 10000 VGS = 5 V thru 2 V 6 VGS = 1.5 V 100 3 1000 9 1st line 2nd line 1000 9 2nd line ID - Drain Current (A) 12 1st line 2nd line 2nd line ID - Drain Current (A) 12 6 3 TC = 125 °C VGS = 1 V 0 0.5 1 1.5 2 2.5 TC = -55 °C 0 10 0 3 10 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 500 10000 0.12 10000 VGS = 1.8 V VGS = 2.5 V 0.06 100 VGS = 4.5 V 0.03 Ciss 200 10 0 3 6 9 12 15 100 Coss 100 0 1000 300 1st line 2nd line 1000 2nd line C - Capacitance (pF) 400 0.09 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 100 TC = 25 °C Crss 0 10 0 5 10 15 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance S16-1004-Rev. A, 30-May-16 30 Document Number: 79034 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA918EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 4 VDS = 7.5 V 100 2 VDS = 24 V 0 ID = 3 A 1 2 3 4 5 1000 1.4 VGS = 1.8 V 1.2 1.0 100 0.8 0.6 10 0 VGS = 4.5 V; 2.5 V 1.6 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) 6 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) ID = 10 A VDS = 15 V 10000 1.8 10000 8 10 -50 6 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature Axis Title Axis Title 100 10000 0.12 10000 TJ = 25 °C 1 100 0.1 0.09 0.06 0.2 0.4 0.6 0.8 1.0 100 TJ = 25 °C 0.03 10 0 1000 TJ = 125 °C 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 7 A 0 10 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 20 10000 0.8 0.5 0.4 ID = 250 μA Power (W) 15 1000 0.6 1st line 2nd line 2nd line VGS(th) (V) 0.7 10 100 5 0.3 0.2 10 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 2nd line Threshold Voltage S16-1004-Rev. A, 30-May-16 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) Document Number: 79034 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA918EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 100 Limited by RDS(on) (1) IDM limited 2nd line ID - Drain Current (A) 10 1000 1st line 2nd line 100 μs 1 1 ms 10 ms TA = 25 °C Single pulse 100 100 ms 1s 10 s DC 0.1 BVDSS limited 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Axis Title 10 8 1000 6 1st line 2nd line 2nd line ID - Drain Current (A) 8 Package limited 4 100 2 0 10 0 25 50 75 100 125 150 Power Dissipation (W) 10000 6 4 2 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TC - Case Temperature (°C) Current Derating a Power Derating 150 Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-1004-Rev. A, 30-May-16 Document Number: 79034 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA918EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79034. S16-1004-Rev. A, 30-May-16 Document Number: 79034 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000