SiSS10DN Datasheet

SiSS10DN
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () (MAX.)
ID (A) a, g
0.00265 at VGS = 10 V
60
0.00360 at VGS = 4.5 V
60
Qg (TYP.)
23 nC
• TrenchFET® Gen IV power MOSFET
• Optimized Qg, Qgd, and Qgd/Qgs ratio
reduces switching related power loss
• 100 % Rg and UIS tested
PowerPAK® 1212-8S
D
D
D 6 7
5
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
8
APPLICATIONS
D
• Synchronous rectification
• High power density DC/DC
3.
3
m
m
1
m
3m
3.
Top View
4
G
Bottom View
2
S
3
S
1
S
• VRMs and embedded DC/DC
G
• Synchronous buck converter
• Load switching
• Battery management
S
Ordering Information:
SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
+20, -16
TC = 70 °C
TA = 25 °C
60 g
ID
31.7 b, c
25 b, c
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
51.8
IS
4.3 b, c
IAS
30
EAS
45
mJ
57
36
PD
W
4.8 b, c
3 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
150
TC = 25 °C
Maximum Power Dissipation
V
60 g
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum Junction-to-Ambient b, f
t  10 s
RthJA
21
26
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.7
2.2
UNIT
°C/W
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
40
-
-
V
-
24
-
-
-5.5
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.1
-
2.4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = +20 V, -16 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
-
-
1
V= 40 V, VDS GS = 0 V, TJ = 55 °C
-
-
10
On-State Drain Current a
ID(on)
VDS  5 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 15 A
-
0.00220 0.00265
VGS = 4.5 V, ID = 10 A
-
0.00300 0.00360
VDS = 10 V, ID = 15 A
-
70
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
RDS(on)
gfs
-
μA
A

S
b
Input Capacitance
Ciss
-
3750
-
Output Capacitance
Coss
-
560
-
Reverse Transfer Capacitance
Crss
-
72
-
VDS = 20 V, VGS = 0 V, f = 1 MHz
Crss/Ciss Ratio
V = 20 V, VGS = 10 V, ID = 10 A
-
0.019
0.038
-
50
75
-
23
35
-
10.3
-
-
4.3
-
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Output Charge
Qoss
VDS = 20 V, VGS = 0 V
-
37
-
Rg
f = 1 MHz
0.5
1.2
2.4
-
10
20
-
19
38
-
28
56
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 20 V, VGS = 4.5 V, ID = 10 A
td(on)
tr
td(off)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
-
7
14
td(on)
-
22
44
-
52
100
tr
td(off)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf
-
23
46
-
10
20
-
-
51.8
-
-
150
pF
nC

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = 5 A
IF = 10 A, dI/dt = 100 A/μs,
TJ = 25 °C
A
-
0.73
1.1
V
-
38
76
ns
-
33
66
nC
-
20
-
-
18
-
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
150
150
10000
10000
VGS = 10 V thru 4 V
60
100
VGS = 3 V
30
1000
90
1st line
2nd line
1000
90
2nd line
ID - Drain Current (A)
120
1st line
2nd line
2nd line
ID - Drain Current (A)
120
TC = 25 °C
60
100
30
TC = -55 °C
TC = 125 °C
VGS = 2 V
0
0
10
0
0.5
1
1.5
2
2.5
10
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
5
Axis Title
0.005
4500
10000
10000
1000
0.003
0.002
100
VGS = 10 V
0.001
1000
2700
1st line
2nd line
VGS = 4.5 V
2nd line
C - Capacitance (pF)
3600
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
Ciss
0.004
1800
Coss
100
900
Crss
0
0
10
20
40
60
80
100
10
0
8
16
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
2.0
ID = 10 A
8
VDS = 30V
1000
1st line
2nd line
6
VDS = 10V
4
100
2
0
10
11
22
33
44
55
2nd line
RDS(on) - On-Resistance (Normalized)
10000
VDS = 20V
40
Axis Title
Axis Title
2nd line
VGS - Gate-to-Source Voltage (V)
32
ID - Drain Current (A)
2nd line
10
0
24
10000
ID = 15 A
1.7
VGS = 10 V
1000
1.4
VGS = 4.5 V
1.1
100
0.8
0.5
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-0219-Rev. A, 08-Feb-16
1st line
2nd line
0
Document Number: 65439
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
0.01
10000
10000
1000
1
TJ = 25 °C
0.1
100
0.01
0.008
1000
0.006
1st line
2nd line
TJ = 150 °C
1st line
2nd line
2nd line
IS - Source Current (A)
2nd line
RDS(on) - On-Resistance (Ω)
ID = 15 A
10
TJ = 125 °C
0.004
100
0.002
TJ = 25 °C
0.001
0
10
0
0.2
0.4
0.6
0.8
1.0
1.2
10
0
2
4
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.5
10000
10000
120
100
0.2
60
40
100
ID = 250 μA
1st line
2nd line
2nd line
Power (W)
ID = 5 mA
-0.4
1000
80
1000
-0.1
1st line
2nd line
2nd line
VGS(th) - Variance (V)
6
-0.7
100
20
-1.0
0
0.001
10
-50
-25
0
25
50
75
100 125 150
10
0.01
0.1
1
10
TJ - Temperature (°C)
2nd line
Time (s)
2nd line
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
IDM limited
ID limited
1000
100 μs
10
1 ms
Limited by RDS(on) (1)
1
10 ms
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100
100 ms
1 Sec
10 Sec
DC
0.1
Ta = 25 °C
Single pulse
0.01
0.01
(1)
0.1
BVDSS limited
1
10
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
120
1000
80
1st line
2nd line
2nd line
ID - Drain Current (A)
100
60
Package Limited
40
100
20
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
70
10000
2.5
56
10000
2.0
1.5
1st line
2nd line
28
2nd line
Power (W)
1000
1st line
2nd line
2nd line
Power (W)
1000
42
1.0
100
14
100
0.5
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS10DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 70 °C/W
0.02
3. TJM - TA = PDMZthJA
Single pulse
0.01
0.0001
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.001
100
(t)
4. Surface mounted
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty Cycle = 0.5
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.1
0.05
100
0.02
Single pulse
0.1
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65439.
S16-0219-Rev. A, 08-Feb-16
Document Number: 65439
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-8S
D
z
8
7
6
5
1
2
3
4
D1
5
6
7
8
2
1
L
K
E
E1
K1
d 0.10 C
2X
d 0.10 C
2X
3
0.10 C
C
A3
A
f
e
b
4
0.08 C
A1
d
DIM.
MILLIMETERS
MIN.
NOM.
A
0.67
A1
0
INCHES
MAX.
MIN.
NOM.
MAX.
0.75
0.83
0.027
0.030
0.033
-
0.05
0
-
0.002
A3
0.20 REF
0.008 REF
b
0.30 BSC
0.012 BSC
3.30 BSC
D
D1
2.15
0.130 BSC
2.35
0.084
1.80
0.063
3.30 BSC
E
E1
2.25
1.60
1.70
0.088
0.092
0.130 BSC
0.067
0.071
e
0.65 BSC
0.026 BSC
K
0.76 TYP
0.030 TYP
K1
0.41 TYP
0.016 TYP
L
0.43 BSC
0.017 BSC
z
0.525 TYP
0.021 TYP
ECN: C12-0200-Rev. A, 12-Mar-12
DWG: 6008
Note
• Millimeters will govern.
Revision: 12-Mar-12
1
Document Number: 63919
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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Revision: 02-Oct-12
1
Document Number: 91000