PMEG6010AESB 60 V, 1 A low VF MEGA Schottky barrier rectifier 1 September 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits • • • • • Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 60 V Low forward voltage, typical: VF = 525 mV Low reverse current, typical: IR = 185 µA Package height typ. 270 µm 3. Applications • • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tsp ≤ 140 °C; - - 1 A VR reverse voltage Tj = 25 °C - - 60 V VF forward voltage IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; - 525 625 mV - 28 100 µA - 185 650 µA square wave Tj = 25 °C IR reverse current VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C VR = 60 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C Scan or click this QR code to view the latest information for this product PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DSN1006-2 (SOD993) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG6010AESB Package Name Description Version DSN1006-2 DSN1006-2, leadless ultra small package; 2 terminals; body 1.0 x 0.6 x 0.27 mm SOD993 7. Marking Table 4. Marking codes Type number Marking code PMEG6010AESB 6A PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 60 V IF forward current Tsp ≤ 135 °C; δ = 1 - 1.4 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 95 °C; - 1 A - 1 A [1] square wave δ = 0.5 ; f = 20 kHz; Tsp ≤ 140 °C; square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 4 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 10 A Ptot total power dissipation Tamb ≤ 25 °C [2] - 0.525 W [3] - 1 W [1] - 1.78 W Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 2 1 cm each. PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] Min Typ Max Unit [1][2] - - 240 K/W [1][3] - - 125 K/W [1][4] - - 70 K/W [5] - - 15 K/W [2] [3] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode [4] [5] 1 cm each. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of anode tab. 2 aaa-016800 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 10 0 1 10-3 0.75 0.33 0.2 0.05 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier aaa-016801 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for anode and cathode 1 cm each Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 aaa-016802 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 10 mA; tp = 300 µs; δ = 0.02 ; 60 - - V forward voltage IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ; - 145 - mV - 210 - mV - 285 340 mV - 325 - mV - 410 480 mV - 455 - mV - 525 625 mV VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C - 8 - µA VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3 ; - 12 45 µA - 28 100 µA - 185 650 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 57 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 20 - pF IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 2.4 - ns VF Tj = 25 °C Tj = 25 °C IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IR reverse current Tj = 25 °C VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C VR = 60 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C Cd trr diode capacitance reverse recovery time Tj = 25 °C PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier aaa-019292 10 IR (A) IF (A) 1 10-2 (1) 10-3 (1) (2) 10-4 (2) 10-1 aaa-019293 10-1 (3) (4) (5) 10-5 10-2 (3) 10-6 (4) 10-7 10-3 10-8 10-4 0.0 0.4 0.8 VF (V) 10-9 1.2 20 pulsed condition (1) Tj = 150 °C pulsed condition (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig. 4. 0 Fig. 5. aaa-019294 (4) PF(AV) (W) 80 60 aaa-019295 0.9 Cd (pF) VR (V) Reverse current as a function of reverse voltage; typical values Forward current as a function of forward voltage; typical values 120 40 (3) 0.6 (2) (1) 40 0 Fig. 6. 0.3 0 20 40 VR (V) 0.0 0.0 60 f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. PMEG6010AESB Product data sheet 1.0 IF(AV) (A) 1.5 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 1 September 2015 0.5 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier aaa-019296 1.00 aaa-019297 1.5 PR(AV) (W) IF(AV) (A) 0.75 (1) (2) 1.0 (1) 0.50 (2) (3) (3) 0.5 (4) 0.25 (4) 0.00 0 20 40 VR (V) 0.0 60 Tj = 150 °C Average reverse power dissipation as a function of reverse voltage; typical values aaa-019298 1.5 Fig. 9. 100 125 150 175 Tamb (°C) Average forward current as a function of ambient temperature; typical values aaa-019299 (1) (2) 1.0 (3) (3) 0.5 0.5 (4) 0.0 75 (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz IF(AV) (A) (2) 1.0 50 1.5 (1) IF(AV) (A) 25 FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 8. 0 0 25 (4) 50 75 100 125 0.0 150 175 Tamb (°C) FR4 PCB, mounting pad for anode and cathode 50 75 100 125 150 175 Tamb (°C) Tj = 150 °C 1 cm each Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values Product data sheet 25 Ceramic PCB, Al2O3, standard footprint 2 PMEG6010AESB 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier aaa-019300 1.5 (1) IF(AV) (A) (2) 1.0 (3) 0.5 (4) 0.0 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition; step recovery P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 14. Duty cycle definition PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 12. Package outline 0.30 0.24 0.65 0.55 0.03 max 1 0.26 0.24 0.65 1.05 0.95 0.26 0.24 Dimensions in mm 2 0.51 0.49 14-10-24 Fig. 15. Package outline DSN1006-2 (SOD993) 13. Soldering SOD993 1.2 0.65 0.3 0.7 0.6 0.5 (2x) (2x) (2x) 0.8 0.2 0.25 (2x) occupied area solder resist 0.35 (2x) solder lands solder paste 0.45 (2x) Dimensions in mm 15-02-20 15-03-05 sod993_fr Fig. 16. Reflow soldering footprint for DSN1006-2 (SOD993) PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier 14. Mounting SOD993 is an ultra small Discretes Silicon No-leads (DSN) package allowing maximized utilization of the package area for active silicon. Due to the special product design, NXP investigated the board assembly process parameters. In order to have an optimum soldering quality, NXP advises following the assembly recommendations explained in AN11689. PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier 15. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG6010AESB v.1 20150901 Product data sheet - - PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PMEG6010AESB NXP Semiconductors 60 V, 1 A low VF MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 16. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Mounting ...............................................................11 15 Revision history ................................................... 12 16 16.1 16.2 16.3 16.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 1 September 2015 PMEG6010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 1 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15