PMEG3010AESB 30 V, 1 A low VF MEGA Schottky barrier rectifier 8 January 2016 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits • • • • • Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 30 V Low forward voltage, typical: VF = 415 mV Low reverse current, typical: IR = 300 µA Package height typ. 270 µm 3. Applications • • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C; - - 1 A VR reverse voltage Tj = 25 °C - - 30 V VF forward voltage IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; - 415 480 mV - 60 255 µA - 300 1250 µA square wave Tj = 25 °C IR reverse current VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C Scan or click this QR code to view the latest information for this product PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DSN1006-2 (SOD993) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG3010AESB Package Name Description Version DSN1006-2 DSN1006-2, leadless ultra small package; 2 terminals; body 1.0 x 0.6 x 0.27 mm SOD993 7. Marking Table 4. Marking codes Type number Marking code PMEG3010AESB 3A PMEG3010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 30 V IF forward current Tsp ≤ 140 °C; δ = 1 - 1.4 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 115 °C; - 1 A - 1 A [1] square wave δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C; square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 4 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 10 A Ptot total power dissipation Tamb ≤ 25 °C [2] - 0.525 W [3] - 1 W [1] - 1.78 W Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 2 1 cm each. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] PMEG3010AESB Product data sheet Min Typ Max Unit [1][2] - - 240 K/W [1][3] - - 125 K/W [1][4] - - 70 K/W [5] - - 15 K/W [2] [3] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode [4] [5] 1 cm each. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of anode tab. 2 All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier aaa-016800 103 Zth(j-a) (K/W) duty cycle = 1 0.5 102 0.25 0.1 10 0 0.75 0.33 0.2 0.05 0.02 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-016801 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for anode and cathode 1 cm each Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 102 aaa-016802 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 10 mA; tp = 300 µs; δ = 0.02 ; 30 - - V forward voltage IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ; - 140 - mV - 200 - mV - 270 325 mV - 300 - mV - 355 405 mV - 380 - mV - 415 480 mV VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C - 13 - µA VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3 ; - 22 90 µA - 60 255 µA - 300 1250 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 86 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 32 - pF IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 3.5 - ns VF Tj = 25 °C Tj = 25 °C IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IR reverse current Tj = 25 °C VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C Cd trr diode capacitance reverse recovery time Tj = 25 °C PMEG3010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier aaa-016291 10 IR (A) IF (A) 1 aaa-016292 1 (1) 10-1 (2) (3) 10-2 (1) 10-3 (2) 10-1 (3) (4) (5) (4) 10-4 10-5 10-2 (5) 10-6 10-7 10-3 10-8 10-4 0.0 Fig. 4. 0.2 0.4 0.6 VF (V) 10-9 0.8 0 10 20 pulsed condition (1) Tj = 150 °C pulsed condition (1) Tj = 150 °C (2) Tj = 125 °C (2) Tj = 125 °C (3) Tj = 85 °C (3) Tj = 85 °C (4) Tj = 25 °C (4) Tj = 25 °C (5) Tj = −40 °C (5) Tj = −40 °C Forward current as a function of forward voltage; typical values Fig. 5. aaa-016293 175 Cd (pF) 150 VR (V) 30 Reverse current as a function of reverse voltage; typical values aaa-016853 0.6 (4) PF(AV) (W) (3) (2) 125 0.4 (1) 100 75 0.2 50 25 0 Fig. 6. 0 10 20 VR (V) 0.0 0.0 30 0.4 f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. PMEG3010AESB Product data sheet 1.2 IF(AV) (A) 1.6 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 8 January 2016 0.8 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier aaa-016854 1.00 PR(AV) (W) (1) IF(AV) (A) (1) 0.75 aaa-016855 1.5 (2) (3) (2) 1.0 0.50 (3) (4) 0.5 (4) 0.25 0.00 0 10 20 VR (V) 0.0 30 Tj = 125 °C Fig. 9. aaa-016856 1.5 100 125 150 175 Tamb (°C) Average forward current as a function of ambient temperature; typical values aaa-016857 (1) IF(AV) (A) (2) (2) 1.0 (3) (3) 0.5 0.5 (4) 0.0 75 1.5 (1) 1.0 50 (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Average reverse power dissipation as a function of reverse voltage; typical values IF(AV) (A) 25 FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 8. 0 0 25 (4) 50 75 100 125 0.0 150 175 Tamb (°C) FR4 PCB, mounting pad for anode and cathode 1 50 75 100 125 150 175 Tamb (°C) Tj = 150 °C cm each Tj = 150 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values Product data sheet 25 Ceramic PCB, Al2O3, standard footprint 2 PMEG3010AESB 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier aaa-016858 1.5 (1) IF(AV) (A) (2) 1.0 (3) 0.5 (4) 0.0 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values PMEG3010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition; step recovery P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 14. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 12. Package outline 0.30 0.24 0.65 0.55 1 0.03 max 0.26 0.24 0.65 1.05 0.95 0.26 0.24 Dimensions in mm 2 0.51 0.49 14-10-24 Fig. 15. Package outline DSN1006-2 (SOD993) PMEG3010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 13. Soldering SOD993 1.2 0.65 0.3 0.7 0.6 0.5 (2x) (2x) (2x) 0.8 0.2 0.25 (2x) occupied area solder resist 0.35 (2x) solder lands solder paste 0.45 (2x) Dimensions in mm 15-02-20 15-03-05 sod993_fr Fig. 16. Reflow soldering footprint for DSN1006-2 (SOD993) 14. Mounting SOD993 is an ultra small Discretes Silicon No-leads (DSN) package allowing maximized utilization of the package area for active silicon. Due to the special product design, NXP investigated the board assembly process parameters. In order to have an optimum soldering quality, NXP advises following the assembly recommendations explained in AN11689. PMEG3010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier 15. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG3010AESB v.3 20160108 Product data sheet - PMEG3010AESB v.2 Modifications: • PMEG3010AESB v.2 20150618 Product data sheet - PMEG3010AESB v.1 PMEG3010AESB v.1 20150506 Preliminary data sheet - - PMEG3010AESB Product data sheet Section added: 14. Mounting All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 15 PMEG3010AESB NXP Semiconductors 30 V, 1 A low VF MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 16. 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PMEG3010AESB Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 Test information ................................................... 10 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Mounting ...............................................................11 15 Revision history ................................................... 12 16 16.1 16.2 16.3 16.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 January 2016 PMEG3010AESB Product data sheet All information provided in this document is subject to legal disclaimers. 8 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved 15 / 15