New Product SiA811DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile Qg 4.9 nC SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage 20 0.45 at 1 A • Cellular Charger Switch • Asynchronous DC/DC for Portable Devices • Load Switch for Portable Devices S K D A Marking Code 1 A G 2 NC HAX Part # code 3 D K XXX Lot Traceability and Date code 0.75 mm D 6 COMPLIANT APPLICATIONS IF (A)a 2 PowerPAK SC-70-6 Dual K RoHS G 5 2.05 mm S 2.05 mm 4 Ordering Information: SiA811DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Drain-Source Voltage (MOSFET) Limit Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ±8 TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C Maximum Power Dissipation (MOSFET) IFM Soldering Recommendations (Peak Temperature)d, e Document Number: 74460 S-80436-Rev. B, 03-Mar-08 - 3.6b, c - 2.9b, c -8 - 1.6b, c 2b 5 6.5 5 TA = 25 °C 1.9b, c PD 1.2b, c 6.8 TC = 70 °C 4.3 TA = 25 °C 1.6b, c TA = 70 °C 1.0b, c - 55 to 150 TJ, Tstg A - 4.5a TC = 70 °C TC = 25 °C Operating Junction and Storage Temperature Range - 4.5a TC = 25 °C TA = 70 °C Maximum Power Dissipation (Schottky) IS IF Average Forward Current (Schottky) Pulsed Forward Current (Schottky) V - 4.5a TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) Unit - 20 260 W °C www.vishay.com 1 New Product SiA811DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC RthJA RthJC t≤5s Steady State t≤5s Steady State Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, f Maximum Junction-to-Case (Drain) (Schottky) Typical 52 12.5 62 15 Maximum 65 16 76 18.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 16.2 mV/°C 2.1 - 0.4 -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 2.8 A -8 µA A 0.078 0.094 VGS = - 2.5 V, ID = - 2.3 A 0.109 0.131 VGS = - 1.8 V, ID = - 0.54 A 0.153 0.185 VDS = - 10 V, ID = - 2.8 A 7 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time www.vishay.com 2 355 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A pF 8.5 13 4.9 7.4 0.75 VDD = - 10 V, RL = 2.2 Ω ID ≅ - 4.5 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 8 10 15 35 55 40 60 tf 50 75 td(on) 5 10 td(off) tr td(off) tf nC 1.2 f = 1 MHz td(on) tr 75 50 VDD = - 10 V, RL = 2.2 Ω ID ≅ - 4.5 A, VGEN = - 8 V, Rg = 1 Ω 10 15 20 30 10 15 ns Document Number: 74460 S-80436-Rev. B, 03-Mar-08 New Product SiA811DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 4.5 -8 IS = - 4.5 A, VGS = 0 V IF = - 4.5 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.85 - 1.2 V 30 60 ns 13 26 nC 10 ns 15 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions IF = 1 A Min. Typ. Max. 0.41 0.45 IF = 1 A, TJ = 125 °C 0.36 0.41 0.08 Vr = 5 V 0.015 Vr = 5 V, TJ = 85 °C 0.5 5.0 Vr = 20 V 0.02 0.10 Vr = 20 V, TJ = 85 °C 0.7 7 Vr = 20 V, TJ = 125 °C 5 50 Vr = 10 V 60 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 3 New Product SiA811DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 2.0 8 1.6 I D - Drain Current (A) I D - Drain Current (A) VGS = 2.5 thru 5 V 6 2V 4 1.2 TC = 125 °C 0.8 TC = 25 °C 1.5 V 2 0.4 0 0.0 0.0 0.0 TC = - 55 °C 0.4 0.8 1.2 1.6 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.3 VGS = 1.8 V C - Capacitance (pF) R DS (on) - On-Resistance (Ω) 500 0.25 0.2 VGS = 2.5 V 0.15 VGS = 4.5 V 0.1 400 Ciss 300 200 Coss 100 Crss 0 0.05 0 2 4 6 I D - Drain Current (A) 8 0 10 4 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 8 ID = 4.5 A ID = 2.8 A 1.4 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 VDS = 10 V 4 VDS = 16 V 2 1.2 1.0 VGS = 4.5 V, 2.5 V, 1.8 V 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74460 S-80436-Rev. B, 03-Mar-08 New Product SiA811DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.3 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) I D = 2.8 A TJ = 150 °C TJ = 25 °C 1 0.25 0.2 TA = 125 °C 0.15 0.1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.05 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 20 0.8 0.7 Power (W) VGS(th) (V) 15 ID = 250 µA 0.6 10 5 0.5 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 Limited by RDS(on)* 1000 IDM limited ID(on) limited I D - Drain Current (A) 100 µs 1 1 ms 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 5 New Product SiA811DJ Vishay Siliconix 8 8 6 6 Power Dissipation (W) I D - Drain Current (A) MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Package Limited 4 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74460 S-80436-Rev. B, 03-Mar-08 New Product SiA811DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 7 New Product SiA811DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 10 I F - Forward Current (A) I F - Reverse Current (mA) 10 1 20 V 0.1 5V 0.01 0.001 TJ = 150 °C 1 TJ = 25 °C 0.10 0.0001 0.00001 - 50 - 25 0 25 50 75 100 125 0.01 0.0 150 0.1 T J - Junction Temperature (°C) 0.2 0.3 0.4 0.5 VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop CT - Junction Capacitance (pF) 300 240 180 120 60 0 0 4 8 12 16 20 VRS - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 74460 S-80436-Rev. B, 03-Mar-08 New Product SiA811DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74460. Document Number: 74460 S-80436-Rev. B, 03-Mar-08 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000