SiA811DJ Datasheet

New Product
SiA811DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.094 at VGS = - 4.5 V
- 4.5
0.131 at VGS = - 2.5 V
- 4.5
0.185 at VGS = - 1.8 V
- 4.5
VDS (V)
- 20
• Halogen-free
• LITTLE FOOT® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
Qg
4.9 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
20
0.45 at 1 A
• Cellular Charger Switch
• Asynchronous DC/DC for Portable Devices
• Load Switch for Portable Devices
S
K
D
A
Marking Code
1
A
G
2
NC
HAX
Part # code
3
D
K
XXX
Lot Traceability
and Date code
0.75 mm
D
6
COMPLIANT
APPLICATIONS
IF (A)a
2
PowerPAK SC-70-6 Dual
K
RoHS
G
5
2.05 mm
S
2.05 mm
4
Ordering Information: SiA811DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage (MOSFET)
Limit
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
±8
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
Pulsed Drain Current (MOSFET)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
TC = 25 °C
TA = 25 °C
Maximum Power Dissipation (MOSFET)
IFM
Soldering Recommendations (Peak Temperature)d, e
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
- 3.6b, c
- 2.9b, c
-8
- 1.6b, c
2b
5
6.5
5
TA = 25 °C
1.9b, c
PD
1.2b, c
6.8
TC = 70 °C
4.3
TA = 25 °C
1.6b, c
TA = 70 °C
1.0b, c
- 55 to 150
TJ, Tstg
A
- 4.5a
TC = 70 °C
TC = 25 °C
Operating Junction and Storage Temperature Range
- 4.5a
TC = 25 °C
TA = 70 °C
Maximum Power Dissipation (Schottky)
IS
IF
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
V
- 4.5a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Unit
- 20
260
W
°C
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New Product
SiA811DJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
RthJA
RthJC
t≤5s
Steady State
t≤5s
Steady State
Maximum Junction-to-Ambient (MOSFET)b, f
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, f
Maximum Junction-to-Case (Drain) (Schottky)
Typical
52
12.5
62
15
Maximum
65
16
76
18.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
- 16.2
mV/°C
2.1
- 0.4
-1
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 2.8 A
-8
µA
A
0.078
0.094
VGS = - 2.5 V, ID = - 2.3 A
0.109
0.131
VGS = - 1.8 V, ID = - 0.54 A
0.153
0.185
VDS = - 10 V, ID = - 2.8 A
7
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
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2
355
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A
pF
8.5
13
4.9
7.4
0.75
VDD = - 10 V, RL = 2.2 Ω
ID ≅ - 4.5 A, VGEN = - 4.5 V, Rg = 1 Ω
Ω
8
10
15
35
55
40
60
tf
50
75
td(on)
5
10
td(off)
tr
td(off)
tf
nC
1.2
f = 1 MHz
td(on)
tr
75
50
VDD = - 10 V, RL = 2.2 Ω
ID ≅ - 4.5 A, VGEN = - 8 V, Rg = 1 Ω
10
15
20
30
10
15
ns
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
New Product
SiA811DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
IS
TC = 25 °C
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 4.5
-8
IS = - 4.5 A, VGS = 0 V
IF = - 4.5 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.85
- 1.2
V
30
60
ns
13
26
nC
10
ns
15
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
VF
Irm
CT
Test Conditions
IF = 1 A
Min.
Typ.
Max.
0.41
0.45
IF = 1 A, TJ = 125 °C
0.36
0.41
0.08
Vr = 5 V
0.015
Vr = 5 V, TJ = 85 °C
0.5
5.0
Vr = 20 V
0.02
0.10
Vr = 20 V, TJ = 85 °C
0.7
7
Vr = 20 V, TJ = 125 °C
5
50
Vr = 10 V
60
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
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New Product
SiA811DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
2.0
8
1.6
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 2.5 thru 5 V
6
2V
4
1.2
TC = 125 °C
0.8
TC = 25 °C
1.5 V
2
0.4
0
0.0
0.0
0.0
TC = - 55 °C
0.4
0.8
1.2
1.6
2.0
0.3
VDS - Drain-to-Source Voltage (V)
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
0.3
VGS = 1.8 V
C - Capacitance (pF)
R DS (on) - On-Resistance (Ω)
500
0.25
0.2
VGS = 2.5 V
0.15
VGS = 4.5 V
0.1
400
Ciss
300
200
Coss
100
Crss
0
0.05
0
2
4
6
I D - Drain Current (A)
8
0
10
4
8
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
8
ID = 4.5 A
ID = 2.8 A
1.4
6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
VDS = 10 V
4
VDS = 16 V
2
1.2
1.0
VGS = 4.5 V, 2.5 V, 1.8 V
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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4
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
New Product
SiA811DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.3
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
I D = 2.8 A
TJ = 150 °C
TJ = 25 °C
1
0.25
0.2
TA = 125 °C
0.15
0.1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0.05
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
20
0.8
0.7
Power (W)
VGS(th) (V)
15
ID = 250 µA
0.6
10
5
0.5
0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
Limited by RDS(on)*
1000
IDM limited
ID(on) limited
I D - Drain Current (A)
100 µs
1
1 ms
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
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5
New Product
SiA811DJ
Vishay Siliconix
8
8
6
6
Power Dissipation (W)
I D - Drain Current (A)
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Package Limited
4
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 74460
S-80436-Rev. B, 03-Mar-08
New Product
SiA811DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
www.vishay.com
7
New Product
SiA811DJ
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
10
I F - Forward Current (A)
I F - Reverse Current (mA)
10
1
20 V
0.1
5V
0.01
0.001
TJ = 150 °C
1
TJ = 25 °C
0.10
0.0001
0.00001
- 50
- 25
0
25
50
75
100
125
0.01
0.0
150
0.1
T J - Junction Temperature (°C)
0.2
0.3
0.4
0.5
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
CT - Junction Capacitance (pF)
300
240
180
120
60
0
0
4
8
12
16
20
VRS - Reverse Voltage (V)
Capacitance
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Document Number: 74460
S-80436-Rev. B, 03-Mar-08
New Product
SiA811DJ
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
0.1
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74460.
Document Number: 74460
S-80436-Rev. B, 03-Mar-08
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Revision: 02-Oct-12
1
Document Number: 91000