New Product Si4838BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested APPLICATIONS • Low VIN DC/DC SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4838BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit 12 ±8 34 27 V 22.5b, c 18.0b, c 70 5.1 A 2.2b, c 20 20 5.7 3.6 mJ W 2.50b, c 1.6b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb,d t ≤ 10 s RthJA 39 50 Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68964 S-82662-Rev. A, 03-Nov-08 www.vishay.com 1 New Product Si4838BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 12 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 12 V, VGS = 0 V 1 VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 4.5 V - 3.2 0.4 30 µA A VGS = 4.5 V, ID = 15 A 0.0021 0.0027 VGS = 2.5 V, ID = 12 A 0.0025 0.0032 VGS = 1.8 V, ID = 10 A 0.0031 0.0040 VDS = 15 V, ID = 15 A 105 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 5760 VDS = 6 V, VGS = 0 V, f = 1 MHz 1145 VDS = 6 V, VGS = 4.5 V, ID = 10 A VDS = 6 V, VGS = 2.5 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 6 V, RL = 0.6 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 0.65 1.3 25 50 29 55 140 240 65 td(on) 12 24 VDD = 6 V, RL = 0.6 Ω ID ≅ 10 A, VGEN = 8 V, Rg = 1 Ω tf Fall Time 50 5.9 35 td(off) Turn-Off Delay Time 84 33 tf tr Rise Time 56 nC 12.5 td(on) Turn-On Delay Time pF 1730 13 26 56 100 10 20 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 5.1 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 70 IS = 3 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.60 1.1 V 52 100 ns 40 80 nC 21 31 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68964 S-82662-Rev. A, 03-Nov-08 New Product Si4838BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 5 4 VGS = 5 thru 1.5 V I D - Drain Current (A) I D - Drain Current (A) 56 42 28 14 TC = 25 °C 3 2 TC = 125 °C 1 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 TC = - 55 °C 0 0.0 2.5 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0038 1.5 8000 0.0034 6400 Ciss VGS = 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.3 0.0030 V GS = 2.5 V 0.0026 VGS = 4.5 V 4800 3200 Coss 0.0022 1600 0.0018 0 Crss 0 14 28 42 56 70 0.0 2.4 ID - Drain Current (A) 4.8 9.6 12.0 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8.0 1.5 ID = 10 A 6.4 VDS = 4 V 4.8 VGS = 2.5 V ID = 15 A R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 7.2 VDS = 6 V VDS = 8 V 3.2 1.3 VGS = 4.5V 1.1 0.9 1.6 0.0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68964 S-82662-Rev. A, 03-Nov-08 80 100 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4838BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.015 100 ID = 15 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.012 0.009 0.006 TJ = 125 °C 0.003 TJ = 25 °C 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 170 0.2 136 0.0 Power (W) V GS(th) Variance (V) 0.001 0.0 0.000 ID = 5 mA - 0.2 5 102 68 ID = 250 µA - 0.4 - 0.6 - 50 34 0 - 25 0 25 50 75 100 125 150 0 .0 0 1 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at whicht RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68964 S-82662-Rev. A, 03-Nov-08 New Product Si4838BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 ID - Drain Current (A) 32 24 16 8 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 7.0 1.80 5.6 1.44 4.2 1.08 Power (W) Power (W) Current Derating* 2.8 1.4 0.72 0.36 0.0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68964 S-82662-Rev. A, 03-Nov-08 www.vishay.com 5 New Product Si4838BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM -- TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68964. www.vishay.com 6 Document Number: 68964 S-82662-Rev. A, 03-Nov-08 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000