Si4666DY Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Buck Converter • DC/DC Converter SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4666DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ± 12 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C 9.3 ID 11.5b,c 9.4b,c IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation TC = 25 °C TA = 25 °C L = 0.1 mH 4.5 IS 2.3b,c IAS 15 EAS 11.25 5 TC = 70 °C 3.2 PD mJ W 2.50b,c 1.6b,c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 40 TC = 25 °C TA = 25 °C V 16.5 TA = 70 °C Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t ≤ 10 s RthJA 38 50 Steady State RthJF 20 25 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. Document Number: 66587 S10-1044-Rev. A, 03-May-10 www.vishay.com 1 Si4666DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient ID = 250 µA VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 24 mV/°C - 3.7 1.5 V VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V 0.6 20 µA A VGS = 10 V, ID = 10 A 0.0083 0.010 VGS = 4.5 V, ID = 8 A 0.0091 0.011 VGS = 2.5 V, ID = 6 A 0.0115 0.014 VDS = 10 V, ID = 10 A 55 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1145 VDS = 10 V, VGS = 0 V, f = 1 MHz pF 107 VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 10 V, VGS = 4.5 V, ID = 10 A 22.4 34 10.7 16 1.9 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 0.6 1.2 13 26 12 24 27 50 tf 10 20 td(on) 10 20 11 22 21 40 8 16 td(off) tr td(off) nC 2.2 f = 1 MHz td(on) tr 236 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 4.5 40 IS = 5 A IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.71 1.1 V 16 32 ns 6 12 nC 7 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66587 S10-1044-Rev. A, 03-May-10 Si4666DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 40 V GS = 10 V thru 2 V 8 V GS = 1 V I D - Drain Current (A) I D - Drain Current (A) 32 24 16 6 T C = 25 °C 4 2 8 T C = 125 °C T C = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 0 0.0 2.5 1.2 1.8 2.4 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.015 3.0 1600 0.013 1280 V GS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 0.011 V GS = 4.5 V 0.009 Ciss 960 640 Coss V GS = 10 V 0.007 320 0.005 0 Crss 0 8 16 24 32 40 0 5 15 20 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.7 ID = 10 A V GS = 10 V ID = 10 A 8 V DS = 10 V 6 V DS = 5 V V DS = 15 V 4 2 (Normalized) 1.5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 V GS = 2.5 V 1.3 1.1 0.9 0 0 5 10 15 20 25 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 66587 S10-1044-Rev. A, 03-May-10 www.vishay.com 3 Si4666DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.040 10 0.032 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 10 A T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.001 0.0 0.024 T J = 125 °C 0.016 T J = 25 °C 0.008 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 6 8 10 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 80 0.1 64 - 0.1 Power (W) VGS(th) Variance (V) 4 ID = 5 mA - 0.3 48 32 ID = 250 μA - 0.5 - 0.7 - 50 16 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) T J - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 I D - Drain Current (A) Limited by RDS(on) * 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 66587 S10-1044-Rev. A, 03-May-10 Si4666DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 I D - Drain Current (A) 16 12 8 4 0 0 25 50 75 100 125 150 T C - Case Temperature (°C) 6.0 2.0 4.8 1.6 3.6 1.2 Power (W) Power (W) Current Derating* 2.4 1.2 0.8 0.4 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66587 S10-1044-Rev. A, 03-May-10 www.vishay.com 5 Si4666DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66587. www.vishay.com 6 Document Number: 66587 S10-1044-Rev. A, 03-May-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000