SUD20N10-66L Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.066 at VGS = 10 V 18.2 0.080 at VGS = 4.5 V 13.2 Qg (Typ.) 19.8 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-252 APPLICATIONS • DC/DC Converters D • DC/AC Inverters • Motor Drives G Drain Connected to Tab D G S S Top View N-Channel MOSFET Ordering Information: SUD20N10-66L-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current TC = 70 °C ID 13.6 IDM 25 Avalanche Current IAS 15 EAS 11.25 L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc Operating Junction and Storage Temperature Range PD V 16.9 Pulsed Drain Current (t = 300 µs) a Unit 41.7b 2.1 A mJ W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 60 Junction-to-Case (Drain) RthJC 3 °C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Base on TC = 25 °C. Document Number: 62815 S13-0629-Rev. A, 25-Mar-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD20N10-66L Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1.2 IGSS VDS = 0 V, VGS = ± 20 V ± 250 VDS = 100 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 150 °C 250 VDS 10 V, VGS = 10 V ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 3 RDS(on) gfs 20 nA µA A VGS = 10 V, ID = 6.6 A 0.055 0.066 VGS = 4.5 V, ID = 6 A 0.066 0.080 VDS = 15 V, ID = 6.6 A 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Timec tr Turn-Off Delay Timec Turn-On Delay Timec Rise Timec 19.8 VDS = 50 V, VGS = 10 V, ID = 6.6 A 4.1 f = 1 MHz VDD = 50 V, RL = 9.6 ID 5.2 A, VGEN = 10 V, Rg = 1 0.4 2 4 8 16 20 tf 5 10 td(on) 38 57 58 87 18 27 8 16 VDD = 50 V, RL = 9.6 ID 5.2 A, VGEN = 4.5 V, Rg = 1 tf Drain-Source Body Diode Ratings and nC 27 td(off) Fall Timec 30 3.6 11 tr c pF 18 td(off) Fall Timec 85 40 td(on) Rise Timec Turn-Off Delay Time 860 VDS = 50 V, VGS = 0 V, f = 1 MHz Characteristicsb TC = 25 °C IS 16.9 Pulsed Current ISM 25 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 5.2 A, VGS = 0 V trr IRM(REC) ns IF = 5.2 A, dI/dt = 100 A/µs Qrr A 0.8 1.5 V 34 51 ns 3 5 A 50 75 nC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62815 S13-0629-Rev. A, 25-Mar-13 For technical questions, contact: [email protected] www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD20N10-66L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.09 25 VGS = 10 V thru 7 V 0.08 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 20 VGS = 4 V 15 10 5 0.07 VGS =4.5V 0.06 VGS = 10 V 0.05 VGS = 3 V 0 0 0.5 1 1.5 0.04 2 0 5 10 VDS - Drain-to-Source Voltage (V) 15 20 25 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 5 0.15 ID = 6.6 A 3 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 4 TC = 25 °C 2 1 0.12 TJ = 125 °C 0.09 TJ = 25 °C 0.06 TC = 125 °C TC = - 55 °C 0 0 1 2 3 0.03 2 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 6 8 10 On-Resistance vs. Gate-to-Source Voltage 10 40 ID = 6.6 A TC = - 55 °C TC = 25 °C 30 VGS - Gate-to-Source Voltage (V) gfs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) TC = 125 °C 20 10 0 0 3 6 9 ID - Drain Current (A) 12 VDS = 50 V 8 VDS = 25 V 6 VDS = 80 V 4 2 0 0 6 18 24 Qg - Total Gate Charge (nC) Transconductance Document Number: 62815 S13-0629-Rev. A, 25-Mar-13 12 For technical questions, contact: [email protected] Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD20N10-66L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 2.7 ID = 250 μA 2.4 10 VGS(th) (V) IS - Source Current (A) TJ = 150 °C 2.1 1.8 TJ = 25 °C 1 1.5 0.1 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 50 - 25 0 25 VSD - Source-to-Drain Voltage (V) 50 75 100 125 150 125 150 TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 127 1250 VDS (V) Drain-to-Source Voltage ID = 250 μA C - Capacitance (pF) 1000 Ciss 750 500 250 122 117 112 107 Coss 0 Crss 102 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) - 50 100 0 25 50 75 100 TJ - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 20 2.25 VGS = 10 V, ID = 6.6 A 15 1.8 VGS = 4.5 V, ID = 6 A 1.35 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) - 25 10 5 0.9 0 0.45 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62815 S13-0629-Rev. A, 25-Mar-13 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating For technical questions, contact: [email protected] www.vishay.com 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD20N10-66L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* 10 ID - Drain Current (A) TJ = 25 °C IDAV (A) 10 100 μs 1 ms 1 10 ms DC, 10 s 1 s, 100 ms 0.1 TJ = 150 °C TC = 25 °C Single Pulse 1 BVDSS Limited 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62815. Document Number: 62815 S13-0629-Rev. A, 25-Mar-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000